Abstract
An equation describing the time-dependent impurity distribution in a loaded crystal is derived on the basis of the concepts of highly excited states in a crystal. It is shown that a necessary condition for high mass transport rates to be achieved is a small difference between the energy of an atom in a highly excited state and the energy of the field of internal stresses. The simplest way for the stated conditions to be satisfied is by plastic deformation in a "pressure + shear" scheme.
| Original language | English |
|---|---|
| Pages (from-to) | 1969-1971 |
| Number of pages | 3 |
| Journal | Physics of the Solid State |
| Volume | 38 |
| Issue number | 12 |
| Publication status | Published - Dec 1996 |
Fingerprint
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Anomalous mass transport in deformable materials under "pressure + shear" conditions. / Khon, Yu A.; Panin, V. E.
In: Physics of the Solid State, Vol. 38, No. 12, 12.1996, p. 1969-1971.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Anomalous mass transport in deformable materials under "pressure + shear" conditions
AU - Khon, Yu A.
AU - Panin, V. E.
PY - 1996/12
Y1 - 1996/12
N2 - An equation describing the time-dependent impurity distribution in a loaded crystal is derived on the basis of the concepts of highly excited states in a crystal. It is shown that a necessary condition for high mass transport rates to be achieved is a small difference between the energy of an atom in a highly excited state and the energy of the field of internal stresses. The simplest way for the stated conditions to be satisfied is by plastic deformation in a "pressure + shear" scheme.
AB - An equation describing the time-dependent impurity distribution in a loaded crystal is derived on the basis of the concepts of highly excited states in a crystal. It is shown that a necessary condition for high mass transport rates to be achieved is a small difference between the energy of an atom in a highly excited state and the energy of the field of internal stresses. The simplest way for the stated conditions to be satisfied is by plastic deformation in a "pressure + shear" scheme.
UR - http://www.scopus.com/inward/record.url?scp=0030362356&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030362356&partnerID=8YFLogxK
M3 - Article
VL - 38
SP - 1969
EP - 1971
JO - Physics of the Solid State
JF - Physics of the Solid State
SN - 1063-7834
IS - 12
ER -