Anomalous mass transport in deformable materials under "pressure + shear" conditions

Yu A. Khon, V. E. Panin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

An equation describing the time-dependent impurity distribution in a loaded crystal is derived on the basis of the concepts of highly excited states in a crystal. It is shown that a necessary condition for high mass transport rates to be achieved is a small difference between the energy of an atom in a highly excited state and the energy of the field of internal stresses. The simplest way for the stated conditions to be satisfied is by plastic deformation in a "pressure + shear" scheme.

Original languageEnglish
Pages (from-to)1969-1971
Number of pages3
JournalPhysics of the Solid State
Volume38
Issue number12
Publication statusPublished - Dec 1996

Fingerprint

Excited states
Mass transfer
shear
Crystals
plastic deformation
excitation
residual stress
crystals
Residual stresses
Plastic deformation
Impurities
impurities
Atoms
energy
atoms

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Anomalous mass transport in deformable materials under "pressure + shear" conditions. / Khon, Yu A.; Panin, V. E.

In: Physics of the Solid State, Vol. 38, No. 12, 12.1996, p. 1969-1971.

Research output: Contribution to journalArticle

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