Abstract
An equation describing the time-dependent impurity distribution in a loaded crystal is derived on the basis of the concepts of highly excited states in a crystal. It is shown that a necessary condition for high mass transport rates to be achieved is a small difference between the energy of an atom in a highly excited state and the energy of the field of internal stresses. The simplest way for the stated conditions to be satisfied is by plastic deformation in a "pressure + shear" scheme.
| Original language | English |
|---|---|
| Pages (from-to) | 1969-1971 |
| Number of pages | 3 |
| Journal | Physics of the Solid State |
| Volume | 38 |
| Issue number | 12 |
| Publication status | Published - Dec 1996 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Khon, Y. A., & Panin, V. E. (1996). Anomalous mass transport in deformable materials under "pressure + shear" conditions. Physics of the Solid State, 38(12), 1969-1971.