Anomalous mass transport in deformable materials under "pressure + shear" conditions

Abstract

An equation describing the time-dependent impurity distribution in a loaded crystal is derived on the basis of the concepts of highly excited states in a crystal. It is shown that a necessary condition for high mass transport rates to be achieved is a small difference between the energy of an atom in a highly excited state and the energy of the field of internal stresses. The simplest way for the stated conditions to be satisfied is by plastic deformation in a "pressure + shear" scheme.

Original language	English
Pages (from-to)	1969-1971
Number of pages	3
Journal	Physics of the Solid State
Volume	38
Issue number	12
Publication status	Published - Dec 1996

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Anomalous mass transport in deformable materials under {"}pressure + shear{"} conditions",

abstract = "An equation describing the time-dependent impurity distribution in a loaded crystal is derived on the basis of the concepts of highly excited states in a crystal. It is shown that a necessary condition for high mass transport rates to be achieved is a small difference between the energy of an atom in a highly excited state and the energy of the field of internal stresses. The simplest way for the stated conditions to be satisfied is by plastic deformation in a {"}pressure + shear{"} scheme.",

author = "Khon, {Yu A.} and Panin, {V. E.}",

year = "1996",

month = dec,

language = "English",

volume = "38",

pages = "1969--1971",

journal = "Physics of the Solid State",

issn = "1063-7834",

publisher = "Maik Nauka-Interperiodica Publishing",

number = "12",

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AU - Panin, V. E.

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N2 - An equation describing the time-dependent impurity distribution in a loaded crystal is derived on the basis of the concepts of highly excited states in a crystal. It is shown that a necessary condition for high mass transport rates to be achieved is a small difference between the energy of an atom in a highly excited state and the energy of the field of internal stresses. The simplest way for the stated conditions to be satisfied is by plastic deformation in a "pressure + shear" scheme.

AB - An equation describing the time-dependent impurity distribution in a loaded crystal is derived on the basis of the concepts of highly excited states in a crystal. It is shown that a necessary condition for high mass transport rates to be achieved is a small difference between the energy of an atom in a highly excited state and the energy of the field of internal stresses. The simplest way for the stated conditions to be satisfied is by plastic deformation in a "pressure + shear" scheme.

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