ANNIHILATION OF POSITRONS IN ELECTRON-IRRADIATED SILICON CRYSTALS.

K. P. Aref'ev, A. A. Tsoi, S. A. Vorob'ev

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

An investigation was made of the influence of a static magnetic field on the angular distribution of the annihilation photons in electron-irradiated n-type silicon single crystals. Formation of positronium states near radiation defects in silicon was observed.

Original languageEnglish
Title of host publicationSov Phys Semicond
Pages1242-1243
Number of pages2
Volume10
Edition11
Publication statusPublished - Nov 1976

ASJC Scopus subject areas

  • Engineering(all)

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    Aref'ev, K. P., Tsoi, A. A., & Vorob'ev, S. A. (1976). ANNIHILATION OF POSITRONS IN ELECTRON-IRRADIATED SILICON CRYSTALS. In Sov Phys Semicond (11 ed., Vol. 10, pp. 1242-1243)