ANNIHILATION OF POSITRONS IN CRYSTALLINE AND GLASSY Tl-Ge-Te AND Tl-Si-Te MATERIALS.

K. P. Aref'ev, E. P. Prokop'ev, V. G. Starodubov, A. A. Tsoi, V. S. Minaev, Yu S. Semenov, V. T. Khryapov

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The angular distribution curves were determined for the photons resulting from the annihilation of positrons in some crystalline and glassy materials belonging to the ternary Tl-Ge-Te and Tl-Si-Te chalcogenide systems. The angular distributions were analyzed using the parameter f equals I(O)/O(8) representing the fraction of the positrons annihilated at defects, where I(0) and I(8) are the counting rates at the maximum and at an angle of 8 mrad on the distribution curve. The momentum distribution of the annihilating electron-positron pairs was deduced from the angular distributions of the photons. The results were used to obtain information on changes in the defect structure of the materials resulting from the glass-crystal transition.

Original languageEnglish
Pages (from-to)1135-1137
Number of pages3
JournalSoviet physics. Semiconductors
Volume14
Issue number10
Publication statusPublished - Oct 1980

Fingerprint

Angular distribution
Positrons
Crystalline materials
Photons
Defect structures
Momentum
Glass
Defects
Crystals
Electrons

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Aref'ev, K. P., Prokop'ev, E. P., Starodubov, V. G., Tsoi, A. A., Minaev, V. S., Semenov, Y. S., & Khryapov, V. T. (1980). ANNIHILATION OF POSITRONS IN CRYSTALLINE AND GLASSY Tl-Ge-Te AND Tl-Si-Te MATERIALS. Soviet physics. Semiconductors, 14(10), 1135-1137.

ANNIHILATION OF POSITRONS IN CRYSTALLINE AND GLASSY Tl-Ge-Te AND Tl-Si-Te MATERIALS. / Aref'ev, K. P.; Prokop'ev, E. P.; Starodubov, V. G.; Tsoi, A. A.; Minaev, V. S.; Semenov, Yu S.; Khryapov, V. T.

In: Soviet physics. Semiconductors, Vol. 14, No. 10, 10.1980, p. 1135-1137.

Research output: Contribution to journalArticle

Aref'ev, KP, Prokop'ev, EP, Starodubov, VG, Tsoi, AA, Minaev, VS, Semenov, YS & Khryapov, VT 1980, 'ANNIHILATION OF POSITRONS IN CRYSTALLINE AND GLASSY Tl-Ge-Te AND Tl-Si-Te MATERIALS.', Soviet physics. Semiconductors, vol. 14, no. 10, pp. 1135-1137.
Aref'ev KP, Prokop'ev EP, Starodubov VG, Tsoi AA, Minaev VS, Semenov YS et al. ANNIHILATION OF POSITRONS IN CRYSTALLINE AND GLASSY Tl-Ge-Te AND Tl-Si-Te MATERIALS. Soviet physics. Semiconductors. 1980 Oct;14(10):1135-1137.
Aref'ev, K. P. ; Prokop'ev, E. P. ; Starodubov, V. G. ; Tsoi, A. A. ; Minaev, V. S. ; Semenov, Yu S. ; Khryapov, V. T. / ANNIHILATION OF POSITRONS IN CRYSTALLINE AND GLASSY Tl-Ge-Te AND Tl-Si-Te MATERIALS. In: Soviet physics. Semiconductors. 1980 ; Vol. 14, No. 10. pp. 1135-1137.
@article{1cfeceb0cb964523a35457b60858e54d,
title = "ANNIHILATION OF POSITRONS IN CRYSTALLINE AND GLASSY Tl-Ge-Te AND Tl-Si-Te MATERIALS.",
abstract = "The angular distribution curves were determined for the photons resulting from the annihilation of positrons in some crystalline and glassy materials belonging to the ternary Tl-Ge-Te and Tl-Si-Te chalcogenide systems. The angular distributions were analyzed using the parameter f equals I(O)/O(8) representing the fraction of the positrons annihilated at defects, where I(0) and I(8) are the counting rates at the maximum and at an angle of 8 mrad on the distribution curve. The momentum distribution of the annihilating electron-positron pairs was deduced from the angular distributions of the photons. The results were used to obtain information on changes in the defect structure of the materials resulting from the glass-crystal transition.",
author = "Aref'ev, {K. P.} and Prokop'ev, {E. P.} and Starodubov, {V. G.} and Tsoi, {A. A.} and Minaev, {V. S.} and Semenov, {Yu S.} and Khryapov, {V. T.}",
year = "1980",
month = "10",
language = "English",
volume = "14",
pages = "1135--1137",
journal = "Soviet physics. Semiconductors",
issn = "0038-5700",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - ANNIHILATION OF POSITRONS IN CRYSTALLINE AND GLASSY Tl-Ge-Te AND Tl-Si-Te MATERIALS.

AU - Aref'ev, K. P.

AU - Prokop'ev, E. P.

AU - Starodubov, V. G.

AU - Tsoi, A. A.

AU - Minaev, V. S.

AU - Semenov, Yu S.

AU - Khryapov, V. T.

PY - 1980/10

Y1 - 1980/10

N2 - The angular distribution curves were determined for the photons resulting from the annihilation of positrons in some crystalline and glassy materials belonging to the ternary Tl-Ge-Te and Tl-Si-Te chalcogenide systems. The angular distributions were analyzed using the parameter f equals I(O)/O(8) representing the fraction of the positrons annihilated at defects, where I(0) and I(8) are the counting rates at the maximum and at an angle of 8 mrad on the distribution curve. The momentum distribution of the annihilating electron-positron pairs was deduced from the angular distributions of the photons. The results were used to obtain information on changes in the defect structure of the materials resulting from the glass-crystal transition.

AB - The angular distribution curves were determined for the photons resulting from the annihilation of positrons in some crystalline and glassy materials belonging to the ternary Tl-Ge-Te and Tl-Si-Te chalcogenide systems. The angular distributions were analyzed using the parameter f equals I(O)/O(8) representing the fraction of the positrons annihilated at defects, where I(0) and I(8) are the counting rates at the maximum and at an angle of 8 mrad on the distribution curve. The momentum distribution of the annihilating electron-positron pairs was deduced from the angular distributions of the photons. The results were used to obtain information on changes in the defect structure of the materials resulting from the glass-crystal transition.

UR - http://www.scopus.com/inward/record.url?scp=4243785625&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4243785625&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:4243785625

VL - 14

SP - 1135

EP - 1137

JO - Soviet physics. Semiconductors

JF - Soviet physics. Semiconductors

SN - 0038-5700

IS - 10

ER -