ANNEALING OF ELECTRON-IRRADIATED GERMANIUM AND SILICON.

Abstract

Crystals of n-type Ge were bombarded with 3. 5 mev electrons at 20-30 C and annealed in 10** minus **4-10** minus **5 torr vacuum by heating at a rate of 3-4 deg/min to 400-600 C to determine the damping decrement Q** minus **1 of flexural vibrations of a sample during annealing and to determine the temperature dependence of the resonance frequency. The measurements were carried out at 1-8 kHz corresponding to the second and fourth resonance vibration modes of amplitudes of the order of 10** minus **5.

Original language	English
Pages (from-to)	945-946
Number of pages	2
Journal	Sov Phys Semicond
Volume	7
Issue number	7
Publication status	Published - 1 Jan 1974

ASJC Scopus subject areas

Engineering(all)

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title = "ANNEALING OF ELECTRON-IRRADIATED GERMANIUM AND SILICON.",

abstract = "Crystals of n-type Ge were bombarded with 3. 5 mev electrons at 20-30 C and annealed in 10** minus **4-10** minus **5 torr vacuum by heating at a rate of 3-4 deg/min to 400-600 C to determine the damping decrement Q** minus **1 of flexural vibrations of a sample during annealing and to determine the temperature dependence of the resonance frequency. The measurements were carried out at 1-8 kHz corresponding to the second and fourth resonance vibration modes of amplitudes of the order of 10** minus **5.",

author = "Astakhov, {V. M.} and Golobokov, {Yu N.} and Stas', {V. F.} and Smirnov, {L. S.}",

year = "1974",

month = jan,

day = "1",

language = "English",

volume = "7",

pages = "945--946",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Maik Nauka-Interperiodica Publishing",

number = "7",

}

TY - JOUR

T1 - ANNEALING OF ELECTRON-IRRADIATED GERMANIUM AND SILICON.

AU - Astakhov, V. M.

AU - Golobokov, Yu N.

AU - Stas', V. F.

AU - Smirnov, L. S.

PY - 1974/1/1

Y1 - 1974/1/1

N2 - Crystals of n-type Ge were bombarded with 3. 5 mev electrons at 20-30 C and annealed in 10** minus **4-10** minus **5 torr vacuum by heating at a rate of 3-4 deg/min to 400-600 C to determine the damping decrement Q** minus **1 of flexural vibrations of a sample during annealing and to determine the temperature dependence of the resonance frequency. The measurements were carried out at 1-8 kHz corresponding to the second and fourth resonance vibration modes of amplitudes of the order of 10** minus **5.

AB - Crystals of n-type Ge were bombarded with 3. 5 mev electrons at 20-30 C and annealed in 10** minus **4-10** minus **5 torr vacuum by heating at a rate of 3-4 deg/min to 400-600 C to determine the damping decrement Q** minus **1 of flexural vibrations of a sample during annealing and to determine the temperature dependence of the resonance frequency. The measurements were carried out at 1-8 kHz corresponding to the second and fourth resonance vibration modes of amplitudes of the order of 10** minus **5.

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M3 - Article

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VL - 7

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EP - 946

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JF - Semiconductors

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