ANNEALING OF ELECTRON-IRRADIATED GERMANIUM AND SILICON.

V. M. Astakhov, Yu N. Golobokov, V. F. Stas', L. S. Smirnov

Research output: Contribution to journalArticle

Abstract

Crystals of n-type Ge were bombarded with 3. 5 mev electrons at 20-30 C and annealed in 10** minus **4-10** minus **5 torr vacuum by heating at a rate of 3-4 deg/min to 400-600 C to determine the damping decrement Q** minus **1 of flexural vibrations of a sample during annealing and to determine the temperature dependence of the resonance frequency. The measurements were carried out at 1-8 kHz corresponding to the second and fourth resonance vibration modes of amplitudes of the order of 10** minus **5.

Original languageEnglish
Pages (from-to)945-946
Number of pages2
JournalSov Phys Semicond
Volume7
Issue number7
Publication statusPublished - 1 Jan 1974

ASJC Scopus subject areas

  • Engineering(all)

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    Astakhov, V. M., Golobokov, Y. N., Stas', V. F., & Smirnov, L. S. (1974). ANNEALING OF ELECTRON-IRRADIATED GERMANIUM AND SILICON. Sov Phys Semicond, 7(7), 945-946.