ANNEALING OF ELECTRON-IRRADIATED GERMANIUM AND SILICON.

V. M. Astakhov, Yu N. Golobokov, V. F. Stas', L. S. Smirnov

Research output: Contribution to journalArticle

Abstract

Crystals of n-type Ge were bombarded with 3. 5 mev electrons at 20-30 C and annealed in 10** minus **4-10** minus **5 torr vacuum by heating at a rate of 3-4 deg/min to 400-600 C to determine the damping decrement Q** minus **1 of flexural vibrations of a sample during annealing and to determine the temperature dependence of the resonance frequency. The measurements were carried out at 1-8 kHz corresponding to the second and fourth resonance vibration modes of amplitudes of the order of 10** minus **5.

Original languageEnglish
Pages (from-to)945-946
Number of pages2
JournalSov Phys Semicond
Volume7
Issue number7
Publication statusPublished - 1 Jan 1974

Fingerprint

Germanium
Silicon
germanium
Annealing
annealing
Electrons
silicon
Vibrations (mechanical)
vibration mode
electrons
Damping
damping
Vacuum
Heating
vibration
vacuum
temperature dependence
Crystals
heating
crystals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Astakhov, V. M., Golobokov, Y. N., Stas', V. F., & Smirnov, L. S. (1974). ANNEALING OF ELECTRON-IRRADIATED GERMANIUM AND SILICON. Sov Phys Semicond, 7(7), 945-946.

ANNEALING OF ELECTRON-IRRADIATED GERMANIUM AND SILICON. / Astakhov, V. M.; Golobokov, Yu N.; Stas', V. F.; Smirnov, L. S.

In: Sov Phys Semicond, Vol. 7, No. 7, 01.01.1974, p. 945-946.

Research output: Contribution to journalArticle

Astakhov, VM, Golobokov, YN, Stas', VF & Smirnov, LS 1974, 'ANNEALING OF ELECTRON-IRRADIATED GERMANIUM AND SILICON.', Sov Phys Semicond, vol. 7, no. 7, pp. 945-946.
Astakhov VM, Golobokov YN, Stas' VF, Smirnov LS. ANNEALING OF ELECTRON-IRRADIATED GERMANIUM AND SILICON. Sov Phys Semicond. 1974 Jan 1;7(7):945-946.
Astakhov, V. M. ; Golobokov, Yu N. ; Stas', V. F. ; Smirnov, L. S. / ANNEALING OF ELECTRON-IRRADIATED GERMANIUM AND SILICON. In: Sov Phys Semicond. 1974 ; Vol. 7, No. 7. pp. 945-946.
@article{f0d3d6bef3d445d4acb49c854060c6e4,
title = "ANNEALING OF ELECTRON-IRRADIATED GERMANIUM AND SILICON.",
abstract = "Crystals of n-type Ge were bombarded with 3. 5 mev electrons at 20-30 C and annealed in 10** minus **4-10** minus **5 torr vacuum by heating at a rate of 3-4 deg/min to 400-600 C to determine the damping decrement Q** minus **1 of flexural vibrations of a sample during annealing and to determine the temperature dependence of the resonance frequency. The measurements were carried out at 1-8 kHz corresponding to the second and fourth resonance vibration modes of amplitudes of the order of 10** minus **5.",
author = "Astakhov, {V. M.} and Golobokov, {Yu N.} and Stas', {V. F.} and Smirnov, {L. S.}",
year = "1974",
month = "1",
day = "1",
language = "English",
volume = "7",
pages = "945--946",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "7",

}

TY - JOUR

T1 - ANNEALING OF ELECTRON-IRRADIATED GERMANIUM AND SILICON.

AU - Astakhov, V. M.

AU - Golobokov, Yu N.

AU - Stas', V. F.

AU - Smirnov, L. S.

PY - 1974/1/1

Y1 - 1974/1/1

N2 - Crystals of n-type Ge were bombarded with 3. 5 mev electrons at 20-30 C and annealed in 10** minus **4-10** minus **5 torr vacuum by heating at a rate of 3-4 deg/min to 400-600 C to determine the damping decrement Q** minus **1 of flexural vibrations of a sample during annealing and to determine the temperature dependence of the resonance frequency. The measurements were carried out at 1-8 kHz corresponding to the second and fourth resonance vibration modes of amplitudes of the order of 10** minus **5.

AB - Crystals of n-type Ge were bombarded with 3. 5 mev electrons at 20-30 C and annealed in 10** minus **4-10** minus **5 torr vacuum by heating at a rate of 3-4 deg/min to 400-600 C to determine the damping decrement Q** minus **1 of flexural vibrations of a sample during annealing and to determine the temperature dependence of the resonance frequency. The measurements were carried out at 1-8 kHz corresponding to the second and fourth resonance vibration modes of amplitudes of the order of 10** minus **5.

UR - http://www.scopus.com/inward/record.url?scp=0015967256&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0015967256&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0015967256

VL - 7

SP - 945

EP - 946

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 7

ER -