Abstract
Crystals of n-type Ge were bombarded with 3. 5 mev electrons at 20-30 C and annealed in 10** minus **4-10** minus **5 torr vacuum by heating at a rate of 3-4 deg/min to 400-600 C to determine the damping decrement Q** minus **1 of flexural vibrations of a sample during annealing and to determine the temperature dependence of the resonance frequency. The measurements were carried out at 1-8 kHz corresponding to the second and fourth resonance vibration modes of amplitudes of the order of 10** minus **5.
| Original language | English |
|---|---|
| Pages (from-to) | 945-946 |
| Number of pages | 2 |
| Journal | Sov Phys Semicond |
| Volume | 7 |
| Issue number | 7 |
| Publication status | Published - 1 Jan 1974 |
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ANNEALING OF ELECTRON-IRRADIATED GERMANIUM AND SILICON. / Astakhov, V. M.; Golobokov, Yu N.; Stas', V. F.; Smirnov, L. S.
In: Sov Phys Semicond, Vol. 7, No. 7, 01.01.1974, p. 945-946.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - ANNEALING OF ELECTRON-IRRADIATED GERMANIUM AND SILICON.
AU - Astakhov, V. M.
AU - Golobokov, Yu N.
AU - Stas', V. F.
AU - Smirnov, L. S.
PY - 1974/1/1
Y1 - 1974/1/1
N2 - Crystals of n-type Ge were bombarded with 3. 5 mev electrons at 20-30 C and annealed in 10** minus **4-10** minus **5 torr vacuum by heating at a rate of 3-4 deg/min to 400-600 C to determine the damping decrement Q** minus **1 of flexural vibrations of a sample during annealing and to determine the temperature dependence of the resonance frequency. The measurements were carried out at 1-8 kHz corresponding to the second and fourth resonance vibration modes of amplitudes of the order of 10** minus **5.
AB - Crystals of n-type Ge were bombarded with 3. 5 mev electrons at 20-30 C and annealed in 10** minus **4-10** minus **5 torr vacuum by heating at a rate of 3-4 deg/min to 400-600 C to determine the damping decrement Q** minus **1 of flexural vibrations of a sample during annealing and to determine the temperature dependence of the resonance frequency. The measurements were carried out at 1-8 kHz corresponding to the second and fourth resonance vibration modes of amplitudes of the order of 10** minus **5.
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M3 - Article
AN - SCOPUS:0015967256
VL - 7
SP - 945
EP - 946
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 7
ER -