Abstract
Crystals of n-type Ge were bombarded with 3. 5 mev electrons at 20-30 C and annealed in 10** minus **4-10** minus **5 torr vacuum by heating at a rate of 3-4 deg/min to 400-600 C to determine the damping decrement Q** minus **1 of flexural vibrations of a sample during annealing and to determine the temperature dependence of the resonance frequency. The measurements were carried out at 1-8 kHz corresponding to the second and fourth resonance vibration modes of amplitudes of the order of 10** minus **5.
| Original language | English |
|---|---|
| Pages (from-to) | 945-946 |
| Number of pages | 2 |
| Journal | Sov Phys Semicond |
| Volume | 7 |
| Issue number | 7 |
| Publication status | Published - 1 Jan 1974 |
Fingerprint
ASJC Scopus subject areas
- Engineering(all)
Cite this
Astakhov, V. M., Golobokov, Y. N., Stas', V. F., & Smirnov, L. S. (1974). ANNEALING OF ELECTRON-IRRADIATED GERMANIUM AND SILICON. Sov Phys Semicond, 7(7), 945-946.