ANGULAR DISTRIBUTIONS OF FAST ELECTRONS AT PLANAR CHANNELING IN SILICON CRYSTALS.

V. V. Kaplin, S. B. Nurmagambetov, V. I. Gridnev, E. I. Rozum, S. Pak, S. R. Uglov, S. A. Vorobiev

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Experimental and theoretical investigations for the orientation dependence of the angular distribution of 5. 6 Mev electrons transmitted through a silicon crystal in (110) and (111) planar directions are performed. The realization of atomic-type and molecular-type quantum states of channeled electrons as well as the effect of population of the definite states are observed.

Original languageEnglish
Pages (from-to)565-574
Number of pages10
JournalPhysica Status Solidi (B) Basic Research
Volume126
Issue number2
Publication statusPublished - Dec 1984

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'ANGULAR DISTRIBUTIONS OF FAST ELECTRONS AT PLANAR CHANNELING IN SILICON CRYSTALS.'. Together they form a unique fingerprint.

  • Cite this

    Kaplin, V. V., Nurmagambetov, S. B., Gridnev, V. I., Rozum, E. I., Pak, S., Uglov, S. R., & Vorobiev, S. A. (1984). ANGULAR DISTRIBUTIONS OF FAST ELECTRONS AT PLANAR CHANNELING IN SILICON CRYSTALS. Physica Status Solidi (B) Basic Research, 126(2), 565-574.