ANGULAR DISTRIBUTIONS OF FAST ELECTRONS AT PLANAR CHANNELING IN SILICON CRYSTALS.

V. V. Kaplin, S. B. Nurmagambetov, V. I. Gridnev, E. I. Rozum, S. Pak, S. R. Uglov, S. A. Vorobiev

Research output: Contribution to journal › Article › peer-review

Abstract

Experimental and theoretical investigations for the orientation dependence of the angular distribution of 5. 6 Mev electrons transmitted through a silicon crystal in (110) and (111) planar directions are performed. The realization of atomic-type and molecular-type quantum states of channeled electrons as well as the effect of population of the definite states are observed.

Original language	English
Pages (from-to)	565-574
Number of pages	10
Journal	Physica Status Solidi (B) Basic Research
Volume	126
Issue number	2
Publication status	Published - Dec 1984

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "ANGULAR DISTRIBUTIONS OF FAST ELECTRONS AT PLANAR CHANNELING IN SILICON CRYSTALS.",

abstract = "Experimental and theoretical investigations for the orientation dependence of the angular distribution of 5. 6 Mev electrons transmitted through a silicon crystal in (110) and (111) planar directions are performed. The realization of atomic-type and molecular-type quantum states of channeled electrons as well as the effect of population of the definite states are observed.",

author = "Kaplin, {V. V.} and Nurmagambetov, {S. B.} and Gridnev, {V. I.} and Rozum, {E. I.} and S. Pak and Uglov, {S. R.} and Vorobiev, {S. A.}",

year = "1984",

month = dec,

language = "English",

volume = "126",

pages = "565--574",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "Wiley-VCH Verlag",

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T1 - ANGULAR DISTRIBUTIONS OF FAST ELECTRONS AT PLANAR CHANNELING IN SILICON CRYSTALS.

AU - Kaplin, V. V.

AU - Nurmagambetov, S. B.

AU - Gridnev, V. I.

AU - Rozum, E. I.

AU - Pak, S.

AU - Uglov, S. R.

AU - Vorobiev, S. A.

PY - 1984/12

Y1 - 1984/12

N2 - Experimental and theoretical investigations for the orientation dependence of the angular distribution of 5. 6 Mev electrons transmitted through a silicon crystal in (110) and (111) planar directions are performed. The realization of atomic-type and molecular-type quantum states of channeled electrons as well as the effect of population of the definite states are observed.

AB - Experimental and theoretical investigations for the orientation dependence of the angular distribution of 5. 6 Mev electrons transmitted through a silicon crystal in (110) and (111) planar directions are performed. The realization of atomic-type and molecular-type quantum states of channeled electrons as well as the effect of population of the definite states are observed.

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M3 - Article

AN - SCOPUS:0021597482

VL - 126

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EP - 574

JO - Physica Status Solidi (B): Basic Research

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SN - 0370-1972

IS - 2

ER -

ANGULAR DISTRIBUTIONS OF FAST ELECTRONS AT PLANAR CHANNELING IN SILICON CRYSTALS.

Abstract

ASJC Scopus subject areas

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