ANGULAR DISTRIBUTIONS OF FAST ELECTRONS AT PLANAR CHANNELING IN SILICON CRYSTALS.

V. V. Kaplin, S. B. Nurmagambetov, V. I. Gridnev, E. I. Rozum, S. Pak, S. R. Uglov, S. A. Vorobiev

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Experimental and theoretical investigations for the orientation dependence of the angular distribution of 5. 6 Mev electrons transmitted through a silicon crystal in (110) and (111) planar directions are performed. The realization of atomic-type and molecular-type quantum states of channeled electrons as well as the effect of population of the definite states are observed.

Original languageEnglish
Pages (from-to)565-574
Number of pages10
JournalPhysica Status Solidi (B) Basic Research
Volume126
Issue number2
Publication statusPublished - Dec 1984

Fingerprint

Angular distribution
Silicon
angular distribution
Crystals
Electrons
silicon
Crystal orientation
crystals
electrons
Direction compound

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kaplin, V. V., Nurmagambetov, S. B., Gridnev, V. I., Rozum, E. I., Pak, S., Uglov, S. R., & Vorobiev, S. A. (1984). ANGULAR DISTRIBUTIONS OF FAST ELECTRONS AT PLANAR CHANNELING IN SILICON CRYSTALS. Physica Status Solidi (B) Basic Research, 126(2), 565-574.

ANGULAR DISTRIBUTIONS OF FAST ELECTRONS AT PLANAR CHANNELING IN SILICON CRYSTALS. / Kaplin, V. V.; Nurmagambetov, S. B.; Gridnev, V. I.; Rozum, E. I.; Pak, S.; Uglov, S. R.; Vorobiev, S. A.

In: Physica Status Solidi (B) Basic Research, Vol. 126, No. 2, 12.1984, p. 565-574.

Research output: Contribution to journalArticle

Kaplin, VV, Nurmagambetov, SB, Gridnev, VI, Rozum, EI, Pak, S, Uglov, SR & Vorobiev, SA 1984, 'ANGULAR DISTRIBUTIONS OF FAST ELECTRONS AT PLANAR CHANNELING IN SILICON CRYSTALS.', Physica Status Solidi (B) Basic Research, vol. 126, no. 2, pp. 565-574.
Kaplin, V. V. ; Nurmagambetov, S. B. ; Gridnev, V. I. ; Rozum, E. I. ; Pak, S. ; Uglov, S. R. ; Vorobiev, S. A. / ANGULAR DISTRIBUTIONS OF FAST ELECTRONS AT PLANAR CHANNELING IN SILICON CRYSTALS. In: Physica Status Solidi (B) Basic Research. 1984 ; Vol. 126, No. 2. pp. 565-574.
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