Analysis of CIC NPT IGBT's turn-off operations for high switching current level

Stéphane Lefebvre, Francis Miserey

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

For a high switching current level during IGBT's turn-off process, the simultaneous presence of high current density and high voltage can lead to avalanche generation. A one-dimensional (1-D) analytical model describing the voltage reapplication phase is presented for snubberless turn-off operations with CIC NPT IGBT's. Without avalanche generation, voltage rate of rise dVAK/dt at turn-off remains constant. Avalanche generation is investigated on the basis of experimental measurements in combination with numerical simulations. The avalanche mechanism generates electrons in the space charge region delaying the sweeping-out process and increasing the turn-off losses. The avalanche generation can be avoided when the gate drive is slowed even though turn-off losses increase.

Original languageEnglish
Pages (from-to)1042-1049
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume46
Issue number5
DOIs
Publication statusPublished - 1 Jan 1999
Externally publishedYes

Fingerprint

Insulated gate bipolar transistors (IGBT)
Electric potential
Electric space charge
Analytical models
Current density
Electrons
Computer simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Analysis of CIC NPT IGBT's turn-off operations for high switching current level. / Lefebvre, Stéphane; Miserey, Francis.

In: IEEE Transactions on Electron Devices, Vol. 46, No. 5, 01.01.1999, p. 1042-1049.

Research output: Contribution to journalArticle

@article{9d22164b81104cfab2f8e02d6cddbedf,
title = "Analysis of CIC NPT IGBT's turn-off operations for high switching current level",
abstract = "For a high switching current level during IGBT's turn-off process, the simultaneous presence of high current density and high voltage can lead to avalanche generation. A one-dimensional (1-D) analytical model describing the voltage reapplication phase is presented for snubberless turn-off operations with CIC NPT IGBT's. Without avalanche generation, voltage rate of rise dVAK/dt at turn-off remains constant. Avalanche generation is investigated on the basis of experimental measurements in combination with numerical simulations. The avalanche mechanism generates electrons in the space charge region delaying the sweeping-out process and increasing the turn-off losses. The avalanche generation can be avoided when the gate drive is slowed even though turn-off losses increase.",
author = "St{\'e}phane Lefebvre and Francis Miserey",
year = "1999",
month = "1",
day = "1",
doi = "10.1109/16.760415",
language = "English",
volume = "46",
pages = "1042--1049",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

TY - JOUR

T1 - Analysis of CIC NPT IGBT's turn-off operations for high switching current level

AU - Lefebvre, Stéphane

AU - Miserey, Francis

PY - 1999/1/1

Y1 - 1999/1/1

N2 - For a high switching current level during IGBT's turn-off process, the simultaneous presence of high current density and high voltage can lead to avalanche generation. A one-dimensional (1-D) analytical model describing the voltage reapplication phase is presented for snubberless turn-off operations with CIC NPT IGBT's. Without avalanche generation, voltage rate of rise dVAK/dt at turn-off remains constant. Avalanche generation is investigated on the basis of experimental measurements in combination with numerical simulations. The avalanche mechanism generates electrons in the space charge region delaying the sweeping-out process and increasing the turn-off losses. The avalanche generation can be avoided when the gate drive is slowed even though turn-off losses increase.

AB - For a high switching current level during IGBT's turn-off process, the simultaneous presence of high current density and high voltage can lead to avalanche generation. A one-dimensional (1-D) analytical model describing the voltage reapplication phase is presented for snubberless turn-off operations with CIC NPT IGBT's. Without avalanche generation, voltage rate of rise dVAK/dt at turn-off remains constant. Avalanche generation is investigated on the basis of experimental measurements in combination with numerical simulations. The avalanche mechanism generates electrons in the space charge region delaying the sweeping-out process and increasing the turn-off losses. The avalanche generation can be avoided when the gate drive is slowed even though turn-off losses increase.

UR - http://www.scopus.com/inward/record.url?scp=0032630961&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032630961&partnerID=8YFLogxK

U2 - 10.1109/16.760415

DO - 10.1109/16.760415

M3 - Article

VL - 46

SP - 1042

EP - 1049

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 5

ER -