An influence of polyelectrolyte layer on electrophysical properties of MIS structures

Dmitry A. Gorin, Alexey M. Yaschenok, Alexey O. Manturov, Boris N. Klimov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An influence of polyelectrolyte layers on electrophysical properties of structures metal-insulator-semiconductor (MIS) under its adsorption on the surface of single crystal silicon is shown. Deposition of polyelectrolyte layers on the surface of single crystal silicon leads to change of the resistance of MIS structure. Deposition of polyethylene imine lead to decreasing the resistance of structure whereas following deposition of polystyrene sodium sulfonate and increasing the number of adsorbed polyelectrolyte layers leads to increasing of resistance of MIS structure.

Original languageEnglish
Title of host publication2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies - Proceedings, INTERNANO-2009
Pages50-52
Number of pages3
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, INTERNANO-2009 - Novosibirsk, Russian Federation
Duration: 28 Oct 200931 Oct 2009

Conference

Conference2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, INTERNANO-2009
CountryRussian Federation
CityNovosibirsk
Period28.10.0931.10.09

Fingerprint

Polyelectrolytes
Semiconductor materials
Metals
Single crystals
Silicon
Polyethylenes
Polystyrenes
Sodium
Adsorption

Keywords

  • MIS structure
  • Polyelectrolyte layers
  • Resistance
  • Silicon
  • Surface

ASJC Scopus subject areas

  • Hardware and Architecture
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Gorin, D. A., Yaschenok, A. M., Manturov, A. O., & Klimov, B. N. (2009). An influence of polyelectrolyte layer on electrophysical properties of MIS structures. In 2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies - Proceedings, INTERNANO-2009 (pp. 50-52). [5335636] https://doi.org/10.1109/INTERNANO.2009.5335636

An influence of polyelectrolyte layer on electrophysical properties of MIS structures. / Gorin, Dmitry A.; Yaschenok, Alexey M.; Manturov, Alexey O.; Klimov, Boris N.

2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies - Proceedings, INTERNANO-2009. 2009. p. 50-52 5335636.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gorin, DA, Yaschenok, AM, Manturov, AO & Klimov, BN 2009, An influence of polyelectrolyte layer on electrophysical properties of MIS structures. in 2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies - Proceedings, INTERNANO-2009., 5335636, pp. 50-52, 2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, INTERNANO-2009, Novosibirsk, Russian Federation, 28.10.09. https://doi.org/10.1109/INTERNANO.2009.5335636
Gorin DA, Yaschenok AM, Manturov AO, Klimov BN. An influence of polyelectrolyte layer on electrophysical properties of MIS structures. In 2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies - Proceedings, INTERNANO-2009. 2009. p. 50-52. 5335636 https://doi.org/10.1109/INTERNANO.2009.5335636
Gorin, Dmitry A. ; Yaschenok, Alexey M. ; Manturov, Alexey O. ; Klimov, Boris N. / An influence of polyelectrolyte layer on electrophysical properties of MIS structures. 2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies - Proceedings, INTERNANO-2009. 2009. pp. 50-52
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