Abstract
This article reports on technological possibilities of magnetron sputtering systems with solid-state and liquid-phase targets to deposition of aluminum films and its structure. The comparison of deposition rates of magnetron sputtering systems with direct current (DC), midfrequency (MF) and high power pulsed (HiPIMS) supplies is shown. The optical emission spectroscopy indicates a high component of target material ions in discharge gap only to HiPIMS technique. Al films are a (111)-line oriented in DC and MF power supply cases, for high power pulsed unit - aluminum films also have intense (220)-line. The dependence of grain sizes and sputtering technique parameters is obtained.
| Original language | English |
|---|---|
| Article number | 012193 |
| Journal | Journal of Physics: Conference Series |
| Volume | 741 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 15 Sep 2016 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Sidelev, D. V., Yuryeva, A. V., Krivobokov, V. P., Shabunin, A. S., Syrtanov, M. S., & Koishybayeva, Z. (2016). Aluminum films deposition by magnetron sputtering systems: Influence of target state and pulsing unit. Journal of Physics: Conference Series, 741(1), [012193]. https://doi.org/10.1088/1742-6596/741/1/012193