Aluminum films deposition by magnetron sputtering systems: Influence of target state and pulsing unit

D. V. Sidelev, A. V. Yuryeva, V. P. Krivobokov, A. S. Shabunin, M. S. Syrtanov, Z. Koishybayeva

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Abstract

This article reports on technological possibilities of magnetron sputtering systems with solid-state and liquid-phase targets to deposition of aluminum films and its structure. The comparison of deposition rates of magnetron sputtering systems with direct current (DC), midfrequency (MF) and high power pulsed (HiPIMS) supplies is shown. The optical emission spectroscopy indicates a high component of target material ions in discharge gap only to HiPIMS technique. Al films are a (111)-line oriented in DC and MF power supply cases, for high power pulsed unit - aluminum films also have intense (220)-line. The dependence of grain sizes and sputtering technique parameters is obtained.

Original language	English
Article number	012193
Journal	Journal of Physics: Conference Series
Volume	741
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/741/1/012193
Publication status	Published - 15 Sep 2016

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ASJC Scopus subject areas

Physics and Astronomy(all)

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Sidelev, D. V., Yuryeva, A. V., Krivobokov, V. P., Shabunin, A. S., Syrtanov, M. S., & Koishybayeva, Z. (2016). Aluminum films deposition by magnetron sputtering systems: Influence of target state and pulsing unit. Journal of Physics: Conference Series, 741(1), [012193]. https://doi.org/10.1088/1742-6596/741/1/012193

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AU - Sidelev, D. V.

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AU - Krivobokov, V. P.

AU - Shabunin, A. S.

AU - Syrtanov, M. S.

AU - Koishybayeva, Z.

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10.1088/1742-6596/741/1/012193