Abstract
This article reports on technological possibilities of magnetron sputtering systems with solid-state and liquid-phase targets to deposition of aluminum films and its structure. The comparison of deposition rates of magnetron sputtering systems with direct current (DC), midfrequency (MF) and high power pulsed (HiPIMS) supplies is shown. The optical emission spectroscopy indicates a high component of target material ions in discharge gap only to HiPIMS technique. Al films are a (111)-line oriented in DC and MF power supply cases, for high power pulsed unit - aluminum films also have intense (220)-line. The dependence of grain sizes and sputtering technique parameters is obtained.
| Original language | English |
|---|---|
| Article number | 012193 |
| Journal | Journal of Physics: Conference Series |
| Volume | 741 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 15 Sep 2016 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Aluminum films deposition by magnetron sputtering systems : Influence of target state and pulsing unit. / Sidelev, D. V.; Yuryeva, A. V.; Krivobokov, V. P.; Shabunin, A. S.; Syrtanov, M. S.; Koishybayeva, Z.
In: Journal of Physics: Conference Series, Vol. 741, No. 1, 012193, 15.09.2016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Aluminum films deposition by magnetron sputtering systems
T2 - Influence of target state and pulsing unit
AU - Sidelev, D. V.
AU - Yuryeva, A. V.
AU - Krivobokov, V. P.
AU - Shabunin, A. S.
AU - Syrtanov, M. S.
AU - Koishybayeva, Z.
PY - 2016/9/15
Y1 - 2016/9/15
N2 - This article reports on technological possibilities of magnetron sputtering systems with solid-state and liquid-phase targets to deposition of aluminum films and its structure. The comparison of deposition rates of magnetron sputtering systems with direct current (DC), midfrequency (MF) and high power pulsed (HiPIMS) supplies is shown. The optical emission spectroscopy indicates a high component of target material ions in discharge gap only to HiPIMS technique. Al films are a (111)-line oriented in DC and MF power supply cases, for high power pulsed unit - aluminum films also have intense (220)-line. The dependence of grain sizes and sputtering technique parameters is obtained.
AB - This article reports on technological possibilities of magnetron sputtering systems with solid-state and liquid-phase targets to deposition of aluminum films and its structure. The comparison of deposition rates of magnetron sputtering systems with direct current (DC), midfrequency (MF) and high power pulsed (HiPIMS) supplies is shown. The optical emission spectroscopy indicates a high component of target material ions in discharge gap only to HiPIMS technique. Al films are a (111)-line oriented in DC and MF power supply cases, for high power pulsed unit - aluminum films also have intense (220)-line. The dependence of grain sizes and sputtering technique parameters is obtained.
UR - http://www.scopus.com/inward/record.url?scp=84989332474&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84989332474&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/741/1/012193
DO - 10.1088/1742-6596/741/1/012193
M3 - Article
VL - 741
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012193
ER -