Aluminum films deposition by magnetron sputtering systems: Influence of target state and pulsing unit

D. V. Sidelev, A. V. Yuryeva, V. P. Krivobokov, A. S. Shabunin, M. S. Syrtanov, Z. Koishybayeva

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

This article reports on technological possibilities of magnetron sputtering systems with solid-state and liquid-phase targets to deposition of aluminum films and its structure. The comparison of deposition rates of magnetron sputtering systems with direct current (DC), midfrequency (MF) and high power pulsed (HiPIMS) supplies is shown. The optical emission spectroscopy indicates a high component of target material ions in discharge gap only to HiPIMS technique. Al films are a (111)-line oriented in DC and MF power supply cases, for high power pulsed unit - aluminum films also have intense (220)-line. The dependence of grain sizes and sputtering technique parameters is obtained.

Original languageEnglish
Article number012193
JournalJournal of Physics: Conference Series
Volume741
Issue number1
DOIs
Publication statusPublished - 15 Sep 2016

Fingerprint

magnetron sputtering
aluminum
direct current
optical emission spectroscopy
power supplies
liquid phases
grain size
sputtering
solid state
ions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

@article{3fa5e2f1c55d45a9ba302e507ac658b8,
title = "Aluminum films deposition by magnetron sputtering systems: Influence of target state and pulsing unit",
abstract = "This article reports on technological possibilities of magnetron sputtering systems with solid-state and liquid-phase targets to deposition of aluminum films and its structure. The comparison of deposition rates of magnetron sputtering systems with direct current (DC), midfrequency (MF) and high power pulsed (HiPIMS) supplies is shown. The optical emission spectroscopy indicates a high component of target material ions in discharge gap only to HiPIMS technique. Al films are a (111)-line oriented in DC and MF power supply cases, for high power pulsed unit - aluminum films also have intense (220)-line. The dependence of grain sizes and sputtering technique parameters is obtained.",
author = "Sidelev, {D. V.} and Yuryeva, {A. V.} and Krivobokov, {V. P.} and Shabunin, {A. S.} and Syrtanov, {M. S.} and Z. Koishybayeva",
year = "2016",
month = "9",
day = "15",
doi = "10.1088/1742-6596/741/1/012193",
language = "English",
volume = "741",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

TY - JOUR

T1 - Aluminum films deposition by magnetron sputtering systems

T2 - Influence of target state and pulsing unit

AU - Sidelev, D. V.

AU - Yuryeva, A. V.

AU - Krivobokov, V. P.

AU - Shabunin, A. S.

AU - Syrtanov, M. S.

AU - Koishybayeva, Z.

PY - 2016/9/15

Y1 - 2016/9/15

N2 - This article reports on technological possibilities of magnetron sputtering systems with solid-state and liquid-phase targets to deposition of aluminum films and its structure. The comparison of deposition rates of magnetron sputtering systems with direct current (DC), midfrequency (MF) and high power pulsed (HiPIMS) supplies is shown. The optical emission spectroscopy indicates a high component of target material ions in discharge gap only to HiPIMS technique. Al films are a (111)-line oriented in DC and MF power supply cases, for high power pulsed unit - aluminum films also have intense (220)-line. The dependence of grain sizes and sputtering technique parameters is obtained.

AB - This article reports on technological possibilities of magnetron sputtering systems with solid-state and liquid-phase targets to deposition of aluminum films and its structure. The comparison of deposition rates of magnetron sputtering systems with direct current (DC), midfrequency (MF) and high power pulsed (HiPIMS) supplies is shown. The optical emission spectroscopy indicates a high component of target material ions in discharge gap only to HiPIMS technique. Al films are a (111)-line oriented in DC and MF power supply cases, for high power pulsed unit - aluminum films also have intense (220)-line. The dependence of grain sizes and sputtering technique parameters is obtained.

UR - http://www.scopus.com/inward/record.url?scp=84989332474&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84989332474&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/741/1/012193

DO - 10.1088/1742-6596/741/1/012193

M3 - Article

AN - SCOPUS:84989332474

VL - 741

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012193

ER -