All-inkjet-printed MoS2 field-effect transistors on paper for low-cost and flexible electronics

Zhi Jiang, Long Chen, Jin Ju Chen, Yan Wang, Zhao quan Xu, Enrico Sowade, Reinhard R. Baumann, Evgeniya Sheremet, Raul D. Rodriguez, Zhe sheng Feng

Research output: Contribution to journalArticlepeer-review


All-inkjet-printing of transistors has received much attention for low cost and flexible integrated circuits. However, most flexible field-effect transistors (FETs) based on the emerging two-dimensional materials suffer from the high cost of substrate and electrode materials. The requirements for high-temperature synthesis and precise control in processing add another layer of complexity. To overcome these issues, low-cost flexible paper-based MoS2 FETs were fabricated by inkjet printing of MoS2 channel materials on paper. Additionally, we proposed and achieved the mask-less and low-temperature formation of source and drain electrodes on paper using in-situ selective-area copper reduction. A low sub-threshold swing of 80 mV/dec, high on/off ratio of 105, and very high turn-on current (Ion) of 200 μA of the paper-based flexible MoS2 FETs were demonstrated using the proposed low-cost and facile all-inkjet-printing technique. The all-inkjet-printing technique assisted by in-situ copper reduction opens new opportunities for low-cost and batch fabrication of paper-based electronic devices in ambient conditions.

Original languageEnglish
Pages (from-to)3649-3658
Number of pages10
JournalApplied Nanoscience (Switzerland)
Issue number9
Publication statusPublished - 1 Sep 2020


  • FETs
  • MoS
  • Nanosheets
  • Sub-threshold swing

ASJC Scopus subject areas

  • Biotechnology
  • Atomic and Molecular Physics, and Optics
  • Materials Science (miscellaneous)
  • Physical and Theoretical Chemistry
  • Cell Biology
  • Electrical and Electronic Engineering

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