TY - JOUR
T1 - All-inkjet-printed high-performance flexible MoS2 and MoS2-reduced graphene oxide field-effect transistors
AU - Jiang, Zhi
AU - Xiao, Kuan
AU - Chen, Jin Ju
AU - Wang, Yan
AU - Xu, Zhao Quan
AU - Sowade, Enrico
AU - Baumann, Reinhard R.
AU - Sheremet, Evgeniya
AU - Rodriguez, Raul D.
AU - Feng, Zhe Sheng
PY - 2020/9/1
Y1 - 2020/9/1
N2 - Two-dimensional (2D) materials have been utilized to design flexible field-effect transistors (FETs) with promising performance. However, flexible FETs still face challenges with poor switching features and ultra-low drive current. In this paper, a facile and repeatable large-area integration process is presented for inkjet-printed FETs with 2D materials active channels and PI films as gate dielectrics. The MoS2 FETs reported here exhibit n-type channel feature with an outstanding average subthreshold swing of 75 mV/dec, an on-state/off-state current ratio of 104, and on-state current up to 10 μA at a power supply voltage of 3.0 V. Besides, MoS2–rGO FETs also exhibit n-type semiconductor features with good electrical properties by the inkjet-printing technology.
AB - Two-dimensional (2D) materials have been utilized to design flexible field-effect transistors (FETs) with promising performance. However, flexible FETs still face challenges with poor switching features and ultra-low drive current. In this paper, a facile and repeatable large-area integration process is presented for inkjet-printed FETs with 2D materials active channels and PI films as gate dielectrics. The MoS2 FETs reported here exhibit n-type channel feature with an outstanding average subthreshold swing of 75 mV/dec, an on-state/off-state current ratio of 104, and on-state current up to 10 μA at a power supply voltage of 3.0 V. Besides, MoS2–rGO FETs also exhibit n-type semiconductor features with good electrical properties by the inkjet-printing technology.
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U2 - 10.1007/s10853-020-04891-1
DO - 10.1007/s10853-020-04891-1
M3 - Article
AN - SCOPUS:85086666256
VL - 55
SP - 12969
EP - 12979
JO - Journal of Materials Science
JF - Journal of Materials Science
SN - 0022-2461
IS - 27
ER -