All-inkjet-printed high-performance flexible MoS2 and MoS2-reduced graphene oxide field-effect transistors

Abstract

Two-dimensional (2D) materials have been utilized to design flexible field-effect transistors (FETs) with promising performance. However, flexible FETs still face challenges with poor switching features and ultra-low drive current. In this paper, a facile and repeatable large-area integration process is presented for inkjet-printed FETs with 2D materials active channels and PI films as gate dielectrics. The MoS₂ FETs reported here exhibit n-type channel feature with an outstanding average subthreshold swing of 75 mV/dec, an on-state/off-state current ratio of 10⁴, and on-state current up to 10 μA at a power supply voltage of 3.0 V. Besides, MoS₂–rGO FETs also exhibit n-type semiconductor features with good electrical properties by the inkjet-printing technology.

Original language	English
Pages (from-to)	12969-12979
Number of pages	11
Journal	Journal of Materials Science
Volume	55
Issue number	27
DOIs	https://doi.org/10.1007/s10853-020-04891-1
Publication status	Published - 1 Sep 2020

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1007/s10853-020-04891-1

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All-inkjet-printed high-performance flexible MoS₂ and MoS₂-reduced graphene oxide field-effect transistors. / Jiang, Zhi; Xiao, Kuan; Chen, Jin Ju; Wang, Yan; Xu, Zhao Quan; Sowade, Enrico; Baumann, Reinhard R.; Sheremet, Evgeniya ; Rodriguez, Raul D.; Feng, Zhe Sheng.

In: Journal of Materials Science, Vol. 55, No. 27, 01.09.2020, p. 12969-12979.

Research output: Contribution to journal › Article › peer-review

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title = "All-inkjet-printed high-performance flexible MoS2 and MoS2-reduced graphene oxide field-effect transistors",

abstract = "Two-dimensional (2D) materials have been utilized to design flexible field-effect transistors (FETs) with promising performance. However, flexible FETs still face challenges with poor switching features and ultra-low drive current. In this paper, a facile and repeatable large-area integration process is presented for inkjet-printed FETs with 2D materials active channels and PI films as gate dielectrics. The MoS2 FETs reported here exhibit n-type channel feature with an outstanding average subthreshold swing of 75 mV/dec, an on-state/off-state current ratio of 104, and on-state current up to 10 μA at a power supply voltage of 3.0 V. Besides, MoS2–rGO FETs also exhibit n-type semiconductor features with good electrical properties by the inkjet-printing technology.",

author = "Zhi Jiang and Kuan Xiao and Chen, {Jin Ju} and Yan Wang and Xu, {Zhao Quan} and Enrico Sowade and Baumann, {Reinhard R.} and Evgeniya Sheremet and Rodriguez, {Raul D.} and Feng, {Zhe Sheng}",

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AU - Jiang, Zhi

AU - Xiao, Kuan

AU - Chen, Jin Ju

AU - Wang, Yan

AU - Xu, Zhao Quan

AU - Sowade, Enrico

AU - Baumann, Reinhard R.

AU - Sheremet, Evgeniya

AU - Rodriguez, Raul D.

AU - Feng, Zhe Sheng

PY - 2020/9/1

Y1 - 2020/9/1

N2 - Two-dimensional (2D) materials have been utilized to design flexible field-effect transistors (FETs) with promising performance. However, flexible FETs still face challenges with poor switching features and ultra-low drive current. In this paper, a facile and repeatable large-area integration process is presented for inkjet-printed FETs with 2D materials active channels and PI films as gate dielectrics. The MoS2 FETs reported here exhibit n-type channel feature with an outstanding average subthreshold swing of 75 mV/dec, an on-state/off-state current ratio of 104, and on-state current up to 10 μA at a power supply voltage of 3.0 V. Besides, MoS2–rGO FETs also exhibit n-type semiconductor features with good electrical properties by the inkjet-printing technology.

AB - Two-dimensional (2D) materials have been utilized to design flexible field-effect transistors (FETs) with promising performance. However, flexible FETs still face challenges with poor switching features and ultra-low drive current. In this paper, a facile and repeatable large-area integration process is presented for inkjet-printed FETs with 2D materials active channels and PI films as gate dielectrics. The MoS2 FETs reported here exhibit n-type channel feature with an outstanding average subthreshold swing of 75 mV/dec, an on-state/off-state current ratio of 104, and on-state current up to 10 μA at a power supply voltage of 3.0 V. Besides, MoS2–rGO FETs also exhibit n-type semiconductor features with good electrical properties by the inkjet-printing technology.

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All-inkjet-printed high-performance flexible MoS₂ and MoS₂-reduced graphene oxide field-effect transistors

Abstract

ASJC Scopus subject areas

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