Abstract
This paper presents an experimental study on the ageing of insulated-gate bipolar transistor (IGBT) power modules. The aim is to identify the effects of power cycling on these devices with high baseplate temperatures (60 °C to 90 °C and wide temperature swings (60 °C to 100 °C). These values for thermal stresses have been defined according to automotive applications. The test conditions are provided by two types of test benches that will be described in this paper. The changes in electrical and thermal indicators are observed regularly by a monitoring system. At the end of the test (reaching damage criterion or failure), different analyses are performed (acoustic scanning and SEM imaging), and the damage is listed systematically. Nineteen samples of 600-V 200-A IGBT modules were thus aged using five different power-cycling protocols. The final summary of results shows that ageing mechanisms mainly concern wire bonds and emitter metallization, with gradual impact depending on protocol severity.
| Original language | English |
|---|---|
| Article number | 5711661 |
| Pages (from-to) | 4931-4941 |
| Number of pages | 11 |
| Journal | IEEE Transactions on Industrial Electronics |
| Volume | 58 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 1 Jan 2011 |
| Externally published | Yes |
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Keywords
- Power electronics
- reliability testing
- semiconductor devices
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering
Cite this
Ageing and failure modes of IGBT modules in high-temperature power cycling. / Smet, Vanessa; Forest, Francois; Huselstein, Jean Jacques; Richardeau, Frédéric; Khatir, Zoubir; Lefebvre, Stéphane; Berkani, Mounira.
In: IEEE Transactions on Industrial Electronics, Vol. 58, No. 10, 5711661, 01.01.2011, p. 4931-4941.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ageing and failure modes of IGBT modules in high-temperature power cycling
AU - Smet, Vanessa
AU - Forest, Francois
AU - Huselstein, Jean Jacques
AU - Richardeau, Frédéric
AU - Khatir, Zoubir
AU - Lefebvre, Stéphane
AU - Berkani, Mounira
PY - 2011/1/1
Y1 - 2011/1/1
N2 - This paper presents an experimental study on the ageing of insulated-gate bipolar transistor (IGBT) power modules. The aim is to identify the effects of power cycling on these devices with high baseplate temperatures (60 °C to 90 °C and wide temperature swings (60 °C to 100 °C). These values for thermal stresses have been defined according to automotive applications. The test conditions are provided by two types of test benches that will be described in this paper. The changes in electrical and thermal indicators are observed regularly by a monitoring system. At the end of the test (reaching damage criterion or failure), different analyses are performed (acoustic scanning and SEM imaging), and the damage is listed systematically. Nineteen samples of 600-V 200-A IGBT modules were thus aged using five different power-cycling protocols. The final summary of results shows that ageing mechanisms mainly concern wire bonds and emitter metallization, with gradual impact depending on protocol severity.
AB - This paper presents an experimental study on the ageing of insulated-gate bipolar transistor (IGBT) power modules. The aim is to identify the effects of power cycling on these devices with high baseplate temperatures (60 °C to 90 °C and wide temperature swings (60 °C to 100 °C). These values for thermal stresses have been defined according to automotive applications. The test conditions are provided by two types of test benches that will be described in this paper. The changes in electrical and thermal indicators are observed regularly by a monitoring system. At the end of the test (reaching damage criterion or failure), different analyses are performed (acoustic scanning and SEM imaging), and the damage is listed systematically. Nineteen samples of 600-V 200-A IGBT modules were thus aged using five different power-cycling protocols. The final summary of results shows that ageing mechanisms mainly concern wire bonds and emitter metallization, with gradual impact depending on protocol severity.
KW - Power electronics
KW - reliability testing
KW - semiconductor devices
UR - http://www.scopus.com/inward/record.url?scp=80052364508&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80052364508&partnerID=8YFLogxK
U2 - 10.1109/TIE.2011.2114313
DO - 10.1109/TIE.2011.2114313
M3 - Article
VL - 58
SP - 4931
EP - 4941
JO - IEEE Transactions on Industrial Electronics
JF - IEEE Transactions on Industrial Electronics
SN - 0278-0046
IS - 10
M1 - 5711661
ER -