Banc de cyclage actif pour l'analyse de la fatigue thermique des brasures de composants IGBTs

Translated title of the contribution: Active cycling bench for analysis of thermal fatigue in the soldering of Insulated Gate Bipolar Transistor (IGBT) components

L. Dupont, S. Lefebvre, Z. Khatir, G. Coquery, J. C. Faugières

Research output: Contribution to journal › Review article › peer-review

Abstract

This article discusses a high-temperature active cycling bench developed for aging the joint between the DCB substrate and the IGBT component base. It outlines the protocol used for indirect measurement of average junction temperature, and gives details on temperature regulation, electrical signal acquisition and test circuit performance. We also set out initial results from long-duration active cycling under harsh operating conditions, with a base temperature of 90°C and power injection of 300 W/cm ².

Translated title of the contribution	Active cycling bench for analysis of thermal fatigue in the soldering of Insulated Gate Bipolar Transistor (IGBT) components
Original language	French
Pages (from-to)	45-51
Number of pages	7
Journal	REE, Revue de L'Electricite et de L'Electronique
Volume	2004
Issue number	2
Publication status	Published - 1 Feb 2004
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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title = "Banc de cyclage actif pour l'analyse de la fatigue thermique des brasures de composants IGBTs",

abstract = "This article discusses a high-temperature active cycling bench developed for aging the joint between the DCB substrate and the IGBT component base. It outlines the protocol used for indirect measurement of average junction temperature, and gives details on temperature regulation, electrical signal acquisition and test circuit performance. We also set out initial results from long-duration active cycling under harsh operating conditions, with a base temperature of 90°C and power injection of 300 W/cm 2.",

author = "L. Dupont and S. Lefebvre and Z. Khatir and G. Coquery and Faugi{\`e}res, {J. C.}",

year = "2004",

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AU - Dupont, L.

AU - Lefebvre, S.

AU - Khatir, Z.

AU - Coquery, G.

AU - Faugières, J. C.

PY - 2004/2/1

Y1 - 2004/2/1

N2 - This article discusses a high-temperature active cycling bench developed for aging the joint between the DCB substrate and the IGBT component base. It outlines the protocol used for indirect measurement of average junction temperature, and gives details on temperature regulation, electrical signal acquisition and test circuit performance. We also set out initial results from long-duration active cycling under harsh operating conditions, with a base temperature of 90°C and power injection of 300 W/cm 2.

AB - This article discusses a high-temperature active cycling bench developed for aging the joint between the DCB substrate and the IGBT component base. It outlines the protocol used for indirect measurement of average junction temperature, and gives details on temperature regulation, electrical signal acquisition and test circuit performance. We also set out initial results from long-duration active cycling under harsh operating conditions, with a base temperature of 90°C and power injection of 300 W/cm 2.

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M3 - Обзорная статья

AN - SCOPUS:33750816844

VL - 2004

SP - 45

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JO - REE, Revue de L'Electricite et de L'Electronique

JF - REE, Revue de L'Electricite et de L'Electronique

SN - 1265-6534

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