Banc de cyclage actif pour l'analyse de la fatigue thermique des brasures de composants IGBTs

Translated title of the contribution: Active cycling bench for analysis of thermal fatigue in the soldering of Insulated Gate Bipolar Transistor (IGBT) components

L. Dupont, S. Lefebvre, Z. Khatir, G. Coquery, J. C. Faugières

Research output: Contribution to journalReview article

Abstract

This article discusses a high-temperature active cycling bench developed for aging the joint between the DCB substrate and the IGBT component base. It outlines the protocol used for indirect measurement of average junction temperature, and gives details on temperature regulation, electrical signal acquisition and test circuit performance. We also set out initial results from long-duration active cycling under harsh operating conditions, with a base temperature of 90°C and power injection of 300 W/cm 2.

Original languageFrench
Pages (from-to)45-51
Number of pages7
JournalREE, Revue de L'Electricite et de L'Electronique
Volume2004
Issue number2
Publication statusPublished - 1 Feb 2004
Externally publishedYes

Fingerprint

Thermal fatigue
Insulated gate bipolar transistors (IGBT)
Soldering
Temperature
Aging of materials
Networks (circuits)
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Banc de cyclage actif pour l'analyse de la fatigue thermique des brasures de composants IGBTs. / Dupont, L.; Lefebvre, S.; Khatir, Z.; Coquery, G.; Faugières, J. C.

In: REE, Revue de L'Electricite et de L'Electronique, Vol. 2004, No. 2, 01.02.2004, p. 45-51.

Research output: Contribution to journalReview article

@article{25e923d8e8424c239a18664aca6af6ce,
title = "Banc de cyclage actif pour l'analyse de la fatigue thermique des brasures de composants IGBTs",
abstract = "This article discusses a high-temperature active cycling bench developed for aging the joint between the DCB substrate and the IGBT component base. It outlines the protocol used for indirect measurement of average junction temperature, and gives details on temperature regulation, electrical signal acquisition and test circuit performance. We also set out initial results from long-duration active cycling under harsh operating conditions, with a base temperature of 90°C and power injection of 300 W/cm 2.",
author = "L. Dupont and S. Lefebvre and Z. Khatir and G. Coquery and Faugi{\`e}res, {J. C.}",
year = "2004",
month = "2",
day = "1",
language = "Французский",
volume = "2004",
pages = "45--51",
journal = "REE, Revue de L'Electricite et de L'Electronique",
issn = "1265-6534",
publisher = "Editorial Office of Chemical Engineering (China)",
number = "2",

}

TY - JOUR

T1 - Banc de cyclage actif pour l'analyse de la fatigue thermique des brasures de composants IGBTs

AU - Dupont, L.

AU - Lefebvre, S.

AU - Khatir, Z.

AU - Coquery, G.

AU - Faugières, J. C.

PY - 2004/2/1

Y1 - 2004/2/1

N2 - This article discusses a high-temperature active cycling bench developed for aging the joint between the DCB substrate and the IGBT component base. It outlines the protocol used for indirect measurement of average junction temperature, and gives details on temperature regulation, electrical signal acquisition and test circuit performance. We also set out initial results from long-duration active cycling under harsh operating conditions, with a base temperature of 90°C and power injection of 300 W/cm 2.

AB - This article discusses a high-temperature active cycling bench developed for aging the joint between the DCB substrate and the IGBT component base. It outlines the protocol used for indirect measurement of average junction temperature, and gives details on temperature regulation, electrical signal acquisition and test circuit performance. We also set out initial results from long-duration active cycling under harsh operating conditions, with a base temperature of 90°C and power injection of 300 W/cm 2.

UR - http://www.scopus.com/inward/record.url?scp=33750816844&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750816844&partnerID=8YFLogxK

M3 - Обзорная статья

VL - 2004

SP - 45

EP - 51

JO - REE, Revue de L'Electricite et de L'Electronique

JF - REE, Revue de L'Electricite et de L'Electronique

SN - 1265-6534

IS - 2

ER -