This article discusses a high-temperature active cycling bench developed for aging the joint between the DCB substrate and the IGBT component base. It outlines the protocol used for indirect measurement of average junction temperature, and gives details on temperature regulation, electrical signal acquisition and test circuit performance. We also set out initial results from long-duration active cycling under harsh operating conditions, with a base temperature of 90°C and power injection of 300 W/cm 2.
|Number of pages||7|
|Journal||REE, Revue de L'Electricite et de L'Electronique|
|Publication status||Published - 1 Feb 2004|
ASJC Scopus subject areas
- Electrical and Electronic Engineering