Banc de cyclage actif pour l'analyse de la fatigue thermique des brasures de composants IGBTs

Translated title of the contribution: Active cycling bench for analysis of thermal fatigue in the soldering of Insulated Gate Bipolar Transistor (IGBT) components

L. Dupont, S. Lefebvre, Z. Khatir, G. Coquery, J. C. Faugières

Research output: Contribution to journalReview article

Abstract

This article discusses a high-temperature active cycling bench developed for aging the joint between the DCB substrate and the IGBT component base. It outlines the protocol used for indirect measurement of average junction temperature, and gives details on temperature regulation, electrical signal acquisition and test circuit performance. We also set out initial results from long-duration active cycling under harsh operating conditions, with a base temperature of 90°C and power injection of 300 W/cm 2.

Translated title of the contributionActive cycling bench for analysis of thermal fatigue in the soldering of Insulated Gate Bipolar Transistor (IGBT) components
Original languageFrench
Pages (from-to)45-51
Number of pages7
JournalREE, Revue de L'Electricite et de L'Electronique
Volume2004
Issue number2
Publication statusPublished - 1 Feb 2004
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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