Abstract
This article discusses a high-temperature active cycling bench developed for aging the joint between the DCB substrate and the IGBT component base. It outlines the protocol used for indirect measurement of average junction temperature, and gives details on temperature regulation, electrical signal acquisition and test circuit performance. We also set out initial results from long-duration active cycling under harsh operating conditions, with a base temperature of 90°C and power injection of 300 W/cm 2.
| Original language | French |
|---|---|
| Pages (from-to) | 45-51 |
| Number of pages | 7 |
| Journal | REE, Revue de L'Electricite et de L'Electronique |
| Volume | 2004 |
| Issue number | 2 |
| Publication status | Published - 1 Feb 2004 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Banc de cyclage actif pour l'analyse de la fatigue thermique des brasures de composants IGBTs. / Dupont, L.; Lefebvre, S.; Khatir, Z.; Coquery, G.; Faugières, J. C.
In: REE, Revue de L'Electricite et de L'Electronique, Vol. 2004, No. 2, 01.02.2004, p. 45-51.Research output: Contribution to journal › Review article
}
TY - JOUR
T1 - Banc de cyclage actif pour l'analyse de la fatigue thermique des brasures de composants IGBTs
AU - Dupont, L.
AU - Lefebvre, S.
AU - Khatir, Z.
AU - Coquery, G.
AU - Faugières, J. C.
PY - 2004/2/1
Y1 - 2004/2/1
N2 - This article discusses a high-temperature active cycling bench developed for aging the joint between the DCB substrate and the IGBT component base. It outlines the protocol used for indirect measurement of average junction temperature, and gives details on temperature regulation, electrical signal acquisition and test circuit performance. We also set out initial results from long-duration active cycling under harsh operating conditions, with a base temperature of 90°C and power injection of 300 W/cm 2.
AB - This article discusses a high-temperature active cycling bench developed for aging the joint between the DCB substrate and the IGBT component base. It outlines the protocol used for indirect measurement of average junction temperature, and gives details on temperature regulation, electrical signal acquisition and test circuit performance. We also set out initial results from long-duration active cycling under harsh operating conditions, with a base temperature of 90°C and power injection of 300 W/cm 2.
UR - http://www.scopus.com/inward/record.url?scp=33750816844&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33750816844&partnerID=8YFLogxK
M3 - Обзорная статья
VL - 2004
SP - 45
EP - 51
JO - REE, Revue de L'Electricite et de L'Electronique
JF - REE, Revue de L'Electricite et de L'Electronique
SN - 1265-6534
IS - 2
ER -