Absorption of Light by Free Charge Carriers in the Crystalline CdS Under Intense Electron Irradiation

V. D. Kulikov, V. Y. Yakovlev

Research output: Contribution to journalArticle

Abstract

The process of light absorption by free electrons in the crystalline cadmium sulfide under irradiation by a nanosecond electron beam with the current density of 8–100 A/cm2 is studied. A superlinear increase in optical absorption is observed if the beam current density is increased from ~8 to 12 A/cm2. The nature of light absorption by thermalized electrons corresponds to the scattering on lattice defects. An increase in the exponent of the power dependence of light absorption on the wavelength with increasing beam current density is associated with the single and double ionization of donors and acceptors. It is concluded that accumulation of charge carriers occurs without capture by traps due to their impact ionization by secondary electrons, whose energy in the thermalization stage is comparable with the band gap of the crystal. According to the results of calculations, the capture cross section of electrons by holes at quadratic recombination is ~10–20 cm2, the Auger recombination coefficient is ~10-31 cm6∙s–1, and the charge carrier concentration is ~1.3∙1018–1.5∙1019 cm–3.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalRussian Physics Journal
DOIs
Publication statusAccepted/In press - 8 Sep 2016

Fingerprint

electron irradiation
electromagnetic absorption
charge carriers
current density
beam currents
ionization
recombination coefficient
cadmium sulfides
absorption cross sections
free electrons
optical absorption
electrons
traps
exponents
electron beams
electron energy
irradiation
defects
scattering
wavelengths

Keywords

  • crystal defects
  • electron beams
  • light absorption by charge carriers
  • semiconductors

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Absorption of Light by Free Charge Carriers in the Crystalline CdS Under Intense Electron Irradiation. / Kulikov, V. D.; Yakovlev, V. Y.

In: Russian Physics Journal, 08.09.2016, p. 1-6.

Research output: Contribution to journalArticle

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N2 - The process of light absorption by free electrons in the crystalline cadmium sulfide under irradiation by a nanosecond electron beam with the current density of 8–100 A/cm2 is studied. A superlinear increase in optical absorption is observed if the beam current density is increased from ~8 to 12 A/cm2. The nature of light absorption by thermalized electrons corresponds to the scattering on lattice defects. An increase in the exponent of the power dependence of light absorption on the wavelength with increasing beam current density is associated with the single and double ionization of donors and acceptors. It is concluded that accumulation of charge carriers occurs without capture by traps due to their impact ionization by secondary electrons, whose energy in the thermalization stage is comparable with the band gap of the crystal. According to the results of calculations, the capture cross section of electrons by holes at quadratic recombination is ~10–20 cm2, the Auger recombination coefficient is ~10-31 cm6∙s–1, and the charge carrier concentration is ~1.3∙1018–1.5∙1019 cm–3.

AB - The process of light absorption by free electrons in the crystalline cadmium sulfide under irradiation by a nanosecond electron beam with the current density of 8–100 A/cm2 is studied. A superlinear increase in optical absorption is observed if the beam current density is increased from ~8 to 12 A/cm2. The nature of light absorption by thermalized electrons corresponds to the scattering on lattice defects. An increase in the exponent of the power dependence of light absorption on the wavelength with increasing beam current density is associated with the single and double ionization of donors and acceptors. It is concluded that accumulation of charge carriers occurs without capture by traps due to their impact ionization by secondary electrons, whose energy in the thermalization stage is comparable with the band gap of the crystal. According to the results of calculations, the capture cross section of electrons by holes at quadratic recombination is ~10–20 cm2, the Auger recombination coefficient is ~10-31 cm6∙s–1, and the charge carrier concentration is ~1.3∙1018–1.5∙1019 cm–3.

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