### Abstract

The fully self-consistent first-principles calculations of electron scattering from short-wavelength phonons between lower valleys in the conduction band of a silicon crystal are carried out for the first time. The calculations of the lattice constant, the electron and phonon spectra, and the scattering probabilities are performed in the framework of a unified approach within the electron density functional theory. The theory contains no phenomenological assumptions regarding the relative position of minima in the conduction band, effective masses of carriers, interatomic forces, and scattering probabilities. The electron-phonon coupling constants (deformation potentials) for symmetry-allowed f and g transitions are calculated. The calculated constants lie in the range of values measured in different experiments involving intervalley transitions in silicon.

Original language | English |
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Pages (from-to) | 1110-1113 |

Number of pages | 4 |

Journal | Physics of the Solid State |

Volume | 51 |

Issue number | 6 |

DOIs | |

Publication status | Published - Jun 2009 |

Externally published | Yes |

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### ASJC Scopus subject areas

- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics

### Cite this

*Physics of the Solid State*,

*51*(6), 1110-1113. https://doi.org/10.1134/S1063783409060031

**Ab initio calculation of the deformation potentials for intervalley phonons in silicon.** / Obukhov, S. V.; Tyuterev, V. G.

Research output: Contribution to journal › Article

*Physics of the Solid State*, vol. 51, no. 6, pp. 1110-1113. https://doi.org/10.1134/S1063783409060031

}

TY - JOUR

T1 - Ab initio calculation of the deformation potentials for intervalley phonons in silicon

AU - Obukhov, S. V.

AU - Tyuterev, V. G.

PY - 2009/6

Y1 - 2009/6

N2 - The fully self-consistent first-principles calculations of electron scattering from short-wavelength phonons between lower valleys in the conduction band of a silicon crystal are carried out for the first time. The calculations of the lattice constant, the electron and phonon spectra, and the scattering probabilities are performed in the framework of a unified approach within the electron density functional theory. The theory contains no phenomenological assumptions regarding the relative position of minima in the conduction band, effective masses of carriers, interatomic forces, and scattering probabilities. The electron-phonon coupling constants (deformation potentials) for symmetry-allowed f and g transitions are calculated. The calculated constants lie in the range of values measured in different experiments involving intervalley transitions in silicon.

AB - The fully self-consistent first-principles calculations of electron scattering from short-wavelength phonons between lower valleys in the conduction band of a silicon crystal are carried out for the first time. The calculations of the lattice constant, the electron and phonon spectra, and the scattering probabilities are performed in the framework of a unified approach within the electron density functional theory. The theory contains no phenomenological assumptions regarding the relative position of minima in the conduction band, effective masses of carriers, interatomic forces, and scattering probabilities. The electron-phonon coupling constants (deformation potentials) for symmetry-allowed f and g transitions are calculated. The calculated constants lie in the range of values measured in different experiments involving intervalley transitions in silicon.

UR - http://www.scopus.com/inward/record.url?scp=67650647637&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67650647637&partnerID=8YFLogxK

U2 - 10.1134/S1063783409060031

DO - 10.1134/S1063783409060031

M3 - Article

AN - SCOPUS:67650647637

VL - 51

SP - 1110

EP - 1113

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 6

ER -