Ab initio calculation of the deformation potentials for intervalley phonons in silicon

S. V. Obukhov, V. G. Tyuterev

Research output: Contribution to journalArticle

Abstract

The fully self-consistent first-principles calculations of electron scattering from short-wavelength phonons between lower valleys in the conduction band of a silicon crystal are carried out for the first time. The calculations of the lattice constant, the electron and phonon spectra, and the scattering probabilities are performed in the framework of a unified approach within the electron density functional theory. The theory contains no phenomenological assumptions regarding the relative position of minima in the conduction band, effective masses of carriers, interatomic forces, and scattering probabilities. The electron-phonon coupling constants (deformation potentials) for symmetry-allowed f and g transitions are calculated. The calculated constants lie in the range of values measured in different experiments involving intervalley transitions in silicon.

Original languageEnglish
Pages (from-to)1110-1113
Number of pages4
JournalPhysics of the Solid State
Volume51
Issue number6
DOIs
Publication statusPublished - Jun 2009
Externally publishedYes

Fingerprint

Silicon
Phonons
Conduction bands
phonons
Scattering
Electron scattering
Electrons
conduction bands
silicon
Lattice constants
Density functional theory
Carrier concentration
interatomic forces
scattering
Wavelength
Crystals
valleys
electron scattering
electrons
density functional theory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Ab initio calculation of the deformation potentials for intervalley phonons in silicon. / Obukhov, S. V.; Tyuterev, V. G.

In: Physics of the Solid State, Vol. 51, No. 6, 06.2009, p. 1110-1113.

Research output: Contribution to journalArticle

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