A thermal neutron detector based on single-crystalline silicon

V. A. Varlachev, E. S. Solodovnikov

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

It is shown that a change in the specific electrical conductivity (SEC) in silicon single crystals after irradiation and radiation defect annealing is directly proportional to the thermal neutron fluence. This fact is used as a basis of a method for measuring the neutron flux. In this case, the proportionality factor is dependent on the neutron spectrum, being independent of the initial SEC, which significantly simplifies detector calibration. In measurements of the thermal neutron fluence in terms of relative and absolute units, the rms was 4 and 8%, respectively.

Original languageEnglish
Pages (from-to)342-344
Number of pages3
JournalInstruments and Experimental Techniques
Volume52
Issue number3
DOIs
Publication statusPublished - May 2009

Fingerprint

Neutron detectors
neutron counters
thermal neutrons
Neutrons
fluence
Crystalline materials
Silicon
electrical resistivity
neutron spectra
silicon
flux (rate)
Neutron flux
irradiation
annealing
detectors
single crystals
defects
radiation
Irradiation
Single crystals

ASJC Scopus subject areas

  • Instrumentation

Cite this

A thermal neutron detector based on single-crystalline silicon. / Varlachev, V. A.; Solodovnikov, E. S.

In: Instruments and Experimental Techniques, Vol. 52, No. 3, 05.2009, p. 342-344.

Research output: Contribution to journalArticle

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