A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices

Abstract

The paper describes ageing mechanisms of the metallization layer deposited on the chips of power semiconductor devices, and the effects of its ageing on electrical performances of a power transistor. We have tried to link changes in electrical performances to metallization degradation, in order to better understand the origin of the physical mechanisms of ageing and the effects of the degradation of the metallization on electrical performances of tested devices.

Original language	English
Pages (from-to)	1824-1829
Number of pages	6
Journal	Microelectronics Reliability
Volume	51
Issue number	9-11
DOIs	https://doi.org/10.1016/j.microrel.2011.06.009
Publication status	Published - 1 Sep 2011
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.microrel.2011.06.009

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title = "A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices",

abstract = "The paper describes ageing mechanisms of the metallization layer deposited on the chips of power semiconductor devices, and the effects of its ageing on electrical performances of a power transistor. We have tried to link changes in electrical performances to metallization degradation, in order to better understand the origin of the physical mechanisms of ageing and the effects of the degradation of the metallization on electrical performances of tested devices.",

author = "S. Pietranico and S. Lefebvre and S. Pommier and {Berkani Bouaroudj}, M. and S. Bontemps",

year = "2011",

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AU - Lefebvre, S.

AU - Pommier, S.

AU - Berkani Bouaroudj, M.

AU - Bontemps, S.

PY - 2011/9/1

Y1 - 2011/9/1

N2 - The paper describes ageing mechanisms of the metallization layer deposited on the chips of power semiconductor devices, and the effects of its ageing on electrical performances of a power transistor. We have tried to link changes in electrical performances to metallization degradation, in order to better understand the origin of the physical mechanisms of ageing and the effects of the degradation of the metallization on electrical performances of tested devices.

AB - The paper describes ageing mechanisms of the metallization layer deposited on the chips of power semiconductor devices, and the effects of its ageing on electrical performances of a power transistor. We have tried to link changes in electrical performances to metallization degradation, in order to better understand the origin of the physical mechanisms of ageing and the effects of the degradation of the metallization on electrical performances of tested devices.

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