A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices

S. Pietranico, S. Lefebvre, S. Pommier, M. Berkani Bouaroudj, S. Bontemps

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

The paper describes ageing mechanisms of the metallization layer deposited on the chips of power semiconductor devices, and the effects of its ageing on electrical performances of a power transistor. We have tried to link changes in electrical performances to metallization degradation, in order to better understand the origin of the physical mechanisms of ageing and the effects of the degradation of the metallization on electrical performances of tested devices.

Original languageEnglish
Pages (from-to)1824-1829
Number of pages6
JournalMicroelectronics Reliability
Volume51
Issue number9-11
DOIs
Publication statusPublished - 1 Sep 2011
Externally publishedYes

Fingerprint

Metallizing
Aluminum
semiconductor devices
Aging of materials
degradation
aluminum
Degradation
transistors
chips
Power semiconductor devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices. / Pietranico, S.; Lefebvre, S.; Pommier, S.; Berkani Bouaroudj, M.; Bontemps, S.

In: Microelectronics Reliability, Vol. 51, No. 9-11, 01.09.2011, p. 1824-1829.

Research output: Contribution to journalArticle

Pietranico, S. ; Lefebvre, S. ; Pommier, S. ; Berkani Bouaroudj, M. ; Bontemps, S. / A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices. In: Microelectronics Reliability. 2011 ; Vol. 51, No. 9-11. pp. 1824-1829.
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