Abstract
The paper describes ageing mechanisms of the metallization layer deposited on the chips of power semiconductor devices, and the effects of its ageing on electrical performances of a power transistor. We have tried to link changes in electrical performances to metallization degradation, in order to better understand the origin of the physical mechanisms of ageing and the effects of the degradation of the metallization on electrical performances of tested devices.
| Original language | English |
|---|---|
| Pages (from-to) | 1824-1829 |
| Number of pages | 6 |
| Journal | Microelectronics Reliability |
| Volume | 51 |
| Issue number | 9-11 |
| DOIs | |
| Publication status | Published - 1 Sep 2011 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Safety, Risk, Reliability and Quality
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Cite this
A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices. / Pietranico, S.; Lefebvre, S.; Pommier, S.; Berkani Bouaroudj, M.; Bontemps, S.
In: Microelectronics Reliability, Vol. 51, No. 9-11, 01.09.2011, p. 1824-1829.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices
AU - Pietranico, S.
AU - Lefebvre, S.
AU - Pommier, S.
AU - Berkani Bouaroudj, M.
AU - Bontemps, S.
PY - 2011/9/1
Y1 - 2011/9/1
N2 - The paper describes ageing mechanisms of the metallization layer deposited on the chips of power semiconductor devices, and the effects of its ageing on electrical performances of a power transistor. We have tried to link changes in electrical performances to metallization degradation, in order to better understand the origin of the physical mechanisms of ageing and the effects of the degradation of the metallization on electrical performances of tested devices.
AB - The paper describes ageing mechanisms of the metallization layer deposited on the chips of power semiconductor devices, and the effects of its ageing on electrical performances of a power transistor. We have tried to link changes in electrical performances to metallization degradation, in order to better understand the origin of the physical mechanisms of ageing and the effects of the degradation of the metallization on electrical performances of tested devices.
UR - http://www.scopus.com/inward/record.url?scp=80052916290&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80052916290&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2011.06.009
DO - 10.1016/j.microrel.2011.06.009
M3 - Article
AN - SCOPUS:80052916290
VL - 51
SP - 1824
EP - 1829
JO - Microelectronics Reliability
JF - Microelectronics Reliability
SN - 0026-2714
IS - 9-11
ER -