A planar diode operating in the regime of limited electron emission

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3 Citations (Scopus)

Abstract

The current-voltage characteristic of a planar diode with a graphite explosive-emission cathode has been experimentally studied at the initial stage of electron current formation. An analytical expression has been obtained for the total area of discrete emitting centers in the cellular structure approximation, assuming that the number of such emitting centers operative during the current pulse formation is constant. It is shown that the electron current buildup for a cathode surface with discrete emitting centers is satisfactorily described by a modified Child-Langmuir formula with the form factor decreasing from F = 6 to 1.

Original languageEnglish
Pages (from-to)292-295
Number of pages4
JournalTechnical Physics Letters
Volume34
Issue number4
DOIs
Publication statusPublished - 1 Apr 2008

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electron emission
diodes
cathodes
form factors
electrons
graphite
electric potential
pulses
approximation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

A planar diode operating in the regime of limited electron emission. / Pushkarev, A. I.; Sazonov, R. V.

In: Technical Physics Letters, Vol. 34, No. 4, 01.04.2008, p. 292-295.

Research output: Contribution to journalArticle

@article{96f45fc12bc844b884e65b0de31f4e3b,
title = "A planar diode operating in the regime of limited electron emission",
abstract = "The current-voltage characteristic of a planar diode with a graphite explosive-emission cathode has been experimentally studied at the initial stage of electron current formation. An analytical expression has been obtained for the total area of discrete emitting centers in the cellular structure approximation, assuming that the number of such emitting centers operative during the current pulse formation is constant. It is shown that the electron current buildup for a cathode surface with discrete emitting centers is satisfactorily described by a modified Child-Langmuir formula with the form factor decreasing from F = 6 to 1.",
author = "Pushkarev, {A. I.} and Sazonov, {R. V.}",
year = "2008",
month = "4",
day = "1",
doi = "10.1134/S106378500804007X",
language = "English",
volume = "34",
pages = "292--295",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "4",

}

TY - JOUR

T1 - A planar diode operating in the regime of limited electron emission

AU - Pushkarev, A. I.

AU - Sazonov, R. V.

PY - 2008/4/1

Y1 - 2008/4/1

N2 - The current-voltage characteristic of a planar diode with a graphite explosive-emission cathode has been experimentally studied at the initial stage of electron current formation. An analytical expression has been obtained for the total area of discrete emitting centers in the cellular structure approximation, assuming that the number of such emitting centers operative during the current pulse formation is constant. It is shown that the electron current buildup for a cathode surface with discrete emitting centers is satisfactorily described by a modified Child-Langmuir formula with the form factor decreasing from F = 6 to 1.

AB - The current-voltage characteristic of a planar diode with a graphite explosive-emission cathode has been experimentally studied at the initial stage of electron current formation. An analytical expression has been obtained for the total area of discrete emitting centers in the cellular structure approximation, assuming that the number of such emitting centers operative during the current pulse formation is constant. It is shown that the electron current buildup for a cathode surface with discrete emitting centers is satisfactorily described by a modified Child-Langmuir formula with the form factor decreasing from F = 6 to 1.

UR - http://www.scopus.com/inward/record.url?scp=43249125778&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43249125778&partnerID=8YFLogxK

U2 - 10.1134/S106378500804007X

DO - 10.1134/S106378500804007X

M3 - Article

AN - SCOPUS:43249125778

VL - 34

SP - 292

EP - 295

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 4

ER -