Abstract
The ageing of the metallization layer (aluminum reconstruction) which is due to power cycling on dies of power semiconductor modules results in the redistribution of the current lines in the metallization layer but also in the elementary cells of the power dies (MOSFET or IGBT) with a critical risk of failure when local current density or local temperature reach a critical value. The paper reports on the estimation of the local degradation of the aluminum sheet resistance due to power cycling which is evaluated by means of an eddy current sensor. First results of experimental data on power dies are presented for the first time.
| Original language | English |
|---|---|
| Title of host publication | Proceedings - PCIM Europe 2012 |
| Subtitle of host publication | International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management |
| Pages | 757-766 |
| Number of pages | 10 |
| Publication status | Published - 1 Dec 2012 |
| Externally published | Yes |
| Event | International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2012 - Nuremberg, Germany Duration: 8 May 2012 → 10 May 2012 |
Publication series
| Name | PCIM Europe Conference Proceedings |
|---|---|
| ISSN (Electronic) | 2191-3358 |
Conference
| Conference | International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2012 |
|---|---|
| Country | Germany |
| City | Nuremberg |
| Period | 8.5.12 → 10.5.12 |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
A measure using the eddy current technique on the effect of aluminum reconstruction in power semiconductor modules. / Nguyen, T. A.; Labrousse, D.; Joubert, P. Y.; Lefebvre, S.; Bontemps, S.
Proceedings - PCIM Europe 2012: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. 2012. p. 757-766 (PCIM Europe Conference Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - A measure using the eddy current technique on the effect of aluminum reconstruction in power semiconductor modules
AU - Nguyen, T. A.
AU - Labrousse, D.
AU - Joubert, P. Y.
AU - Lefebvre, S.
AU - Bontemps, S.
PY - 2012/12/1
Y1 - 2012/12/1
N2 - The ageing of the metallization layer (aluminum reconstruction) which is due to power cycling on dies of power semiconductor modules results in the redistribution of the current lines in the metallization layer but also in the elementary cells of the power dies (MOSFET or IGBT) with a critical risk of failure when local current density or local temperature reach a critical value. The paper reports on the estimation of the local degradation of the aluminum sheet resistance due to power cycling which is evaluated by means of an eddy current sensor. First results of experimental data on power dies are presented for the first time.
AB - The ageing of the metallization layer (aluminum reconstruction) which is due to power cycling on dies of power semiconductor modules results in the redistribution of the current lines in the metallization layer but also in the elementary cells of the power dies (MOSFET or IGBT) with a critical risk of failure when local current density or local temperature reach a critical value. The paper reports on the estimation of the local degradation of the aluminum sheet resistance due to power cycling which is evaluated by means of an eddy current sensor. First results of experimental data on power dies are presented for the first time.
UR - http://www.scopus.com/inward/record.url?scp=84874153918&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84874153918&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84874153918
SN - 9783800734313
T3 - PCIM Europe Conference Proceedings
SP - 757
EP - 766
BT - Proceedings - PCIM Europe 2012
ER -