A fast-neutron detector based on single-crystalline silicon

V. A. Varlachev, E. S. Solodovnikov

Research output: Contribution to journalArticle

Abstract

It is shown that the change of the specific electrical conductivity (SEC) of silicon single crystals in the process of their irradiation is directly proportional to the fast-neutron fluence. This is used as the basis of the principle of the neutron-flux detection. The coefficient of proportionality depends on the neutron spectrum, but does not depend on the initial SEC, which significantly simplifies detector calibration. A set of wafers with different SEC values has been manufactured using the technology silicon neutron-transmutation doping. The SEC has been measured by the four-probe method. A simple method for measuring the SEC without recourse to any special setup is proposed. The random measurement error of the fast-neutron fluence was ∼10%, and the absolute one was ∼37%.

Original languageEnglish
Pages (from-to)171-174
Number of pages4
JournalInstruments and Experimental Techniques
Volume51
Issue number2
DOIs
Publication statusPublished - Mar 2008

Fingerprint

Neutron detectors
neutron counters
fast neutrons
Crystalline materials
Neutrons
Silicon
electrical resistivity
silicon
fluence
neutron transmutation doping
Random errors
Neutron flux
neutron spectra
flux (rate)
Measurement errors
Doping (additives)
Electric Conductivity
Irradiation
Single crystals
wafers

ASJC Scopus subject areas

  • Engineering (miscellaneous)
  • Instrumentation

Cite this

A fast-neutron detector based on single-crystalline silicon. / Varlachev, V. A.; Solodovnikov, E. S.

In: Instruments and Experimental Techniques, Vol. 51, No. 2, 03.2008, p. 171-174.

Research output: Contribution to journalArticle

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