A fast-neutron detector based on single-crystalline silicon

V. A. Varlachev, E. S. Solodovnikov

Research output: Contribution to journalArticlepeer-review

Abstract

It is shown that the change of the specific electrical conductivity (SEC) of silicon single crystals in the process of their irradiation is directly proportional to the fast-neutron fluence. This is used as the basis of the principle of the neutron-flux detection. The coefficient of proportionality depends on the neutron spectrum, but does not depend on the initial SEC, which significantly simplifies detector calibration. A set of wafers with different SEC values has been manufactured using the technology silicon neutron-transmutation doping. The SEC has been measured by the four-probe method. A simple method for measuring the SEC without recourse to any special setup is proposed. The random measurement error of the fast-neutron fluence was ∼10%, and the absolute one was ∼37%.

Original languageEnglish
Pages (from-to)171-174
Number of pages4
JournalInstruments and Experimental Techniques
Volume51
Issue number2
DOIs
Publication statusPublished - Mar 2008

ASJC Scopus subject areas

  • Engineering (miscellaneous)
  • Instrumentation

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