A Change in the Electro-Physical Properties of Narrow-Band CdHgTe Solid Solutions Acted Upon by a Volume Discharge Induced by an Avalanche Electron Beam in the Air at Atmospheric Pressure

A. V. Voitsekhovskii, D. V. Grigor'ev, A. G. Korotaev, A. P. Kokhanenko, V. F. Tarasenko, M. A. Shulepov

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12 Citations (Scopus)

Abstract

The effect of a nanosecond volume discharge forming in an inhomogeneous electrical field at atmospheric pressure on the CdHgTe (MCT) epitaxial films of the p-type conduction with the hole concentration 2·10 16 cm 3 and mobility 500 cm 2·V -1·s -1 is studied. The measurement of the electrophysical parameters of the MCT specimens upon irradiation shows that a layer exhibiting the n-type conduction is formed in the near-surface region of the epitaxial films. After 600 pulses and more, the thickness and the parameters of the layer are such that the measured field dependence of the Hall coefficient corresponds to the material of the n-type conduction. Analysis of the preliminary results reveals that the foregoing nanosecond volume discharge in the air at atmospheric pressure is promising for modification of electro-physical MCT properties.

Original languageEnglish
Pages (from-to)1152-1155
Number of pages4
JournalRussian Physics Journal
Volume54
Issue number10
DOIs
Publication statusPublished - Mar 2012
Externally publishedYes

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Keywords

  • semiconductor
  • surface modification
  • volume discharge

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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