Abstract
The effect of a nanosecond volume discharge forming in an inhomogeneous electrical field at atmospheric pressure on the CdHgTe (MCT) epitaxial films of the p-type conduction with the hole concentration 2·10 16 cm 3 and mobility 500 cm 2·V -1·s -1 is studied. The measurement of the electrophysical parameters of the MCT specimens upon irradiation shows that a layer exhibiting the n-type conduction is formed in the near-surface region of the epitaxial films. After 600 pulses and more, the thickness and the parameters of the layer are such that the measured field dependence of the Hall coefficient corresponds to the material of the n-type conduction. Analysis of the preliminary results reveals that the foregoing nanosecond volume discharge in the air at atmospheric pressure is promising for modification of electro-physical MCT properties.
| Original language | English |
|---|---|
| Pages (from-to) | 1152-1155 |
| Number of pages | 4 |
| Journal | Russian Physics Journal |
| Volume | 54 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - Mar 2012 |
| Externally published | Yes |
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Keywords
- semiconductor
- surface modification
- volume discharge
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
A Change in the Electro-Physical Properties of Narrow-Band CdHgTe Solid Solutions Acted Upon by a Volume Discharge Induced by an Avalanche Electron Beam in the Air at Atmospheric Pressure. / Voitsekhovskii, A. V.; Grigor'ev, D. V.; Korotaev, A. G.; Kokhanenko, A. P.; Tarasenko, V. F.; Shulepov, M. A.
In: Russian Physics Journal, Vol. 54, No. 10, 03.2012, p. 1152-1155.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A Change in the Electro-Physical Properties of Narrow-Band CdHgTe Solid Solutions Acted Upon by a Volume Discharge Induced by an Avalanche Electron Beam in the Air at Atmospheric Pressure
AU - Voitsekhovskii, A. V.
AU - Grigor'ev, D. V.
AU - Korotaev, A. G.
AU - Kokhanenko, A. P.
AU - Tarasenko, V. F.
AU - Shulepov, M. A.
PY - 2012/3
Y1 - 2012/3
N2 - The effect of a nanosecond volume discharge forming in an inhomogeneous electrical field at atmospheric pressure on the CdHgTe (MCT) epitaxial films of the p-type conduction with the hole concentration 2·10 16 cm 3 and mobility 500 cm 2·V -1·s -1 is studied. The measurement of the electrophysical parameters of the MCT specimens upon irradiation shows that a layer exhibiting the n-type conduction is formed in the near-surface region of the epitaxial films. After 600 pulses and more, the thickness and the parameters of the layer are such that the measured field dependence of the Hall coefficient corresponds to the material of the n-type conduction. Analysis of the preliminary results reveals that the foregoing nanosecond volume discharge in the air at atmospheric pressure is promising for modification of electro-physical MCT properties.
AB - The effect of a nanosecond volume discharge forming in an inhomogeneous electrical field at atmospheric pressure on the CdHgTe (MCT) epitaxial films of the p-type conduction with the hole concentration 2·10 16 cm 3 and mobility 500 cm 2·V -1·s -1 is studied. The measurement of the electrophysical parameters of the MCT specimens upon irradiation shows that a layer exhibiting the n-type conduction is formed in the near-surface region of the epitaxial films. After 600 pulses and more, the thickness and the parameters of the layer are such that the measured field dependence of the Hall coefficient corresponds to the material of the n-type conduction. Analysis of the preliminary results reveals that the foregoing nanosecond volume discharge in the air at atmospheric pressure is promising for modification of electro-physical MCT properties.
KW - semiconductor
KW - surface modification
KW - volume discharge
UR - http://www.scopus.com/inward/record.url?scp=84858747917&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84858747917&partnerID=8YFLogxK
U2 - 10.1007/s11182-012-9723-7
DO - 10.1007/s11182-012-9723-7
M3 - Article
AN - SCOPUS:84858747917
VL - 54
SP - 1152
EP - 1155
JO - Russian Physics Journal
JF - Russian Physics Journal
SN - 1064-8887
IS - 10
ER -