A Change in the Electro-Physical Properties of Narrow-Band CdHgTe Solid Solutions Acted Upon by a Volume Discharge Induced by an Avalanche Electron Beam in the Air at Atmospheric Pressure

A. V. Voitsekhovskii, D. V. Grigor'ev, A. G. Korotaev, A. P. Kokhanenko, V. F. Tarasenko, M. A. Shulepov

Research output: Contribution to journal › Article

Abstract

The effect of a nanosecond volume discharge forming in an inhomogeneous electrical field at atmospheric pressure on the CdHgTe (MCT) epitaxial films of the p-type conduction with the hole concentration 2·10 ¹⁶ cm ³ and mobility 500 cm ²·V ^-1·s ^-1 is studied. The measurement of the electrophysical parameters of the MCT specimens upon irradiation shows that a layer exhibiting the n-type conduction is formed in the near-surface region of the epitaxial films. After 600 pulses and more, the thickness and the parameters of the layer are such that the measured field dependence of the Hall coefficient corresponds to the material of the n-type conduction. Analysis of the preliminary results reveals that the foregoing nanosecond volume discharge in the air at atmospheric pressure is promising for modification of electro-physical MCT properties.

Original language	English
Pages (from-to)	1152-1155
Number of pages	4
Journal	Russian Physics Journal
Volume	54
Issue number	10
DOIs	https://doi.org/10.1007/s11182-012-9723-7
Publication status	Published - Mar 2012
Externally published	Yes

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Keywords

semiconductor
surface modification
volume discharge

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Voitsekhovskii, A. V., Grigor'ev, D. V., Korotaev, A. G., Kokhanenko, A. P., Tarasenko, V. F., & Shulepov, M. A. (2012). A Change in the Electro-Physical Properties of Narrow-Band CdHgTe Solid Solutions Acted Upon by a Volume Discharge Induced by an Avalanche Electron Beam in the Air at Atmospheric Pressure. Russian Physics Journal, 54(10), 1152-1155. https://doi.org/10.1007/s11182-012-9723-7

A Change in the Electro-Physical Properties of Narrow-Band CdHgTe Solid Solutions Acted Upon by a Volume Discharge Induced by an Avalanche Electron Beam in the Air at Atmospheric Pressure. / Voitsekhovskii, A. V.; Grigor'ev, D. V.; Korotaev, A. G.; Kokhanenko, A. P.; Tarasenko, V. F.; Shulepov, M. A.

In: Russian Physics Journal, Vol. 54, No. 10, 03.2012, p. 1152-1155.

Research output: Contribution to journal › Article

Voitsekhovskii, AV, Grigor'ev, DV, Korotaev, AG, Kokhanenko, AP, Tarasenko, VF & Shulepov, MA 2012, 'A Change in the Electro-Physical Properties of Narrow-Band CdHgTe Solid Solutions Acted Upon by a Volume Discharge Induced by an Avalanche Electron Beam in the Air at Atmospheric Pressure', Russian Physics Journal, vol. 54, no. 10, pp. 1152-1155. https://doi.org/10.1007/s11182-012-9723-7

Voitsekhovskii AV, Grigor'ev DV, Korotaev AG, Kokhanenko AP, Tarasenko VF, Shulepov MA. A Change in the Electro-Physical Properties of Narrow-Band CdHgTe Solid Solutions Acted Upon by a Volume Discharge Induced by an Avalanche Electron Beam in the Air at Atmospheric Pressure. Russian Physics Journal. 2012 Mar;54(10):1152-1155. https://doi.org/10.1007/s11182-012-9723-7

Voitsekhovskii, A. V. ; Grigor'ev, D. V. ; Korotaev, A. G. ; Kokhanenko, A. P. ; Tarasenko, V. F. ; Shulepov, M. A. / A Change in the Electro-Physical Properties of Narrow-Band CdHgTe Solid Solutions Acted Upon by a Volume Discharge Induced by an Avalanche Electron Beam in the Air at Atmospheric Pressure. In: Russian Physics Journal. 2012 ; Vol. 54, No. 10. pp. 1152-1155.

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abstract = "The effect of a nanosecond volume discharge forming in an inhomogeneous electrical field at atmospheric pressure on the CdHgTe (MCT) epitaxial films of the p-type conduction with the hole concentration 2·10 16 cm 3 and mobility 500 cm 2·V -1·s -1 is studied. The measurement of the electrophysical parameters of the MCT specimens upon irradiation shows that a layer exhibiting the n-type conduction is formed in the near-surface region of the epitaxial films. After 600 pulses and more, the thickness and the parameters of the layer are such that the measured field dependence of the Hall coefficient corresponds to the material of the n-type conduction. Analysis of the preliminary results reveals that the foregoing nanosecond volume discharge in the air at atmospheric pressure is promising for modification of electro-physical MCT properties.",

keywords = "semiconductor, surface modification, volume discharge",

author = "Voitsekhovskii, {A. V.} and Grigor'ev, {D. V.} and Korotaev, {A. G.} and Kokhanenko, {A. P.} and Tarasenko, {V. F.} and Shulepov, {M. A.}",

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AB - The effect of a nanosecond volume discharge forming in an inhomogeneous electrical field at atmospheric pressure on the CdHgTe (MCT) epitaxial films of the p-type conduction with the hole concentration 2·10 16 cm 3 and mobility 500 cm 2·V -1·s -1 is studied. The measurement of the electrophysical parameters of the MCT specimens upon irradiation shows that a layer exhibiting the n-type conduction is formed in the near-surface region of the epitaxial films. After 600 pulses and more, the thickness and the parameters of the layer are such that the measured field dependence of the Hall coefficient corresponds to the material of the n-type conduction. Analysis of the preliminary results reveals that the foregoing nanosecond volume discharge in the air at atmospheric pressure is promising for modification of electro-physical MCT properties.

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Access to Document

10.1007/s11182-012-9723-7