A "capacitor" model of the hysteresis of tunneling current in w-GaN/AlGaN(0001) structures

A. N. Razzhuvalov, S. N. Grinyaev

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A "capacitor" model of the hysteresis is developed using the self-consistent calculation of the tunneling current in a w-GaN/AlGaN(0001) double-barrier structure. In the framework of this model, the current jumps and changes in the potential and the electric field in the structure upon transition from one branch of the current loop to the other branch are considered a result of the recharging of two joined capacitors with the plates located at the positions of the extrema of variations in the electron density in the regions of the emitter, the quantum well, and the collector. It is demonstrated that, when the external and internal fields in the quantum well compensate for each other, the tunneling current is sharply and irreducibly switched to the characteristics of the other resonance and forms a wide hysteresis loop so that, in the branches of this loop, the charge is redistributed between the quantum well and the collector. If the fields coincide with each other, there arises a narrow "singleresonance" hysteresis loop, which is accompanied by the transfer of the electron charge from the emitter to the collector. The developed model leads to agreement with the results of the self-consistent calculations and provides an illustrative interpretation of the complex electron tunneling processes.

Original languageEnglish
Pages (from-to)189-201
Number of pages13
JournalPhysics of the Solid State
Volume51
Issue number1
DOIs
Publication statusPublished - Jan 2009
Externally publishedYes

Fingerprint

Semiconductor quantum wells
Hysteresis
capacitors
Capacitors
hysteresis
accumulators
Hysteresis loops
quantum wells
emitters
Electron tunneling
recharging
Carrier concentration
range (extremes)
electron tunneling
Electric fields
Electrons
electric fields
aluminum gallium nitride
electrons

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

A "capacitor" model of the hysteresis of tunneling current in w-GaN/AlGaN(0001) structures. / Razzhuvalov, A. N.; Grinyaev, S. N.

In: Physics of the Solid State, Vol. 51, No. 1, 01.2009, p. 189-201.

Research output: Contribution to journalArticle

@article{aaa39a96ddd741fca13c0704171dce7c,
title = "A {"}capacitor{"} model of the hysteresis of tunneling current in w-GaN/AlGaN(0001) structures",
abstract = "A {"}capacitor{"} model of the hysteresis is developed using the self-consistent calculation of the tunneling current in a w-GaN/AlGaN(0001) double-barrier structure. In the framework of this model, the current jumps and changes in the potential and the electric field in the structure upon transition from one branch of the current loop to the other branch are considered a result of the recharging of two joined capacitors with the plates located at the positions of the extrema of variations in the electron density in the regions of the emitter, the quantum well, and the collector. It is demonstrated that, when the external and internal fields in the quantum well compensate for each other, the tunneling current is sharply and irreducibly switched to the characteristics of the other resonance and forms a wide hysteresis loop so that, in the branches of this loop, the charge is redistributed between the quantum well and the collector. If the fields coincide with each other, there arises a narrow {"}singleresonance{"} hysteresis loop, which is accompanied by the transfer of the electron charge from the emitter to the collector. The developed model leads to agreement with the results of the self-consistent calculations and provides an illustrative interpretation of the complex electron tunneling processes.",
author = "Razzhuvalov, {A. N.} and Grinyaev, {S. N.}",
year = "2009",
month = "1",
doi = "10.1134/S1063783409010247",
language = "English",
volume = "51",
pages = "189--201",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "1",

}

TY - JOUR

T1 - A "capacitor" model of the hysteresis of tunneling current in w-GaN/AlGaN(0001) structures

AU - Razzhuvalov, A. N.

AU - Grinyaev, S. N.

PY - 2009/1

Y1 - 2009/1

N2 - A "capacitor" model of the hysteresis is developed using the self-consistent calculation of the tunneling current in a w-GaN/AlGaN(0001) double-barrier structure. In the framework of this model, the current jumps and changes in the potential and the electric field in the structure upon transition from one branch of the current loop to the other branch are considered a result of the recharging of two joined capacitors with the plates located at the positions of the extrema of variations in the electron density in the regions of the emitter, the quantum well, and the collector. It is demonstrated that, when the external and internal fields in the quantum well compensate for each other, the tunneling current is sharply and irreducibly switched to the characteristics of the other resonance and forms a wide hysteresis loop so that, in the branches of this loop, the charge is redistributed between the quantum well and the collector. If the fields coincide with each other, there arises a narrow "singleresonance" hysteresis loop, which is accompanied by the transfer of the electron charge from the emitter to the collector. The developed model leads to agreement with the results of the self-consistent calculations and provides an illustrative interpretation of the complex electron tunneling processes.

AB - A "capacitor" model of the hysteresis is developed using the self-consistent calculation of the tunneling current in a w-GaN/AlGaN(0001) double-barrier structure. In the framework of this model, the current jumps and changes in the potential and the electric field in the structure upon transition from one branch of the current loop to the other branch are considered a result of the recharging of two joined capacitors with the plates located at the positions of the extrema of variations in the electron density in the regions of the emitter, the quantum well, and the collector. It is demonstrated that, when the external and internal fields in the quantum well compensate for each other, the tunneling current is sharply and irreducibly switched to the characteristics of the other resonance and forms a wide hysteresis loop so that, in the branches of this loop, the charge is redistributed between the quantum well and the collector. If the fields coincide with each other, there arises a narrow "singleresonance" hysteresis loop, which is accompanied by the transfer of the electron charge from the emitter to the collector. The developed model leads to agreement with the results of the self-consistent calculations and provides an illustrative interpretation of the complex electron tunneling processes.

UR - http://www.scopus.com/inward/record.url?scp=58149492794&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58149492794&partnerID=8YFLogxK

U2 - 10.1134/S1063783409010247

DO - 10.1134/S1063783409010247

M3 - Article

AN - SCOPUS:58149492794

VL - 51

SP - 189

EP - 201

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 1

ER -