[131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors

M. Landel, C. Gautier, D. Labrousse, S. Lefebvre

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


This paper presents experimental robustness of 600 V GaN High Electron Mobility Transistors (HEMT) submitted to Short-Circuits (SC) operation modes. A dedicated secured test bench has been developed and designed in order to protect as quickly as possible the Device Under Test (DUT) after failure. Some devices featured a great robustness under SC and were able to support several SC of a very long duration. On the contrary, others failed immediately at the first pulse, for a low dissipated energy. The obtained results reveal a severe dispersal in terms of SC robustness for these new emerging components. Gate behavior has been also studied, showing a leakage current during each SC, destructive or not. A part of the paper is also dedicated to the study of the effects of case temperature and DC voltage on robustness.

Original languageEnglish
Pages (from-to)560-565
Number of pages6
JournalMicroelectronics Reliability
Publication statusPublished - 1 Sep 2016


  • Destructive
  • Dispersal
  • Failure
  • GaN HEMT
  • Leakage current
  • Oscillations
  • Robustness
  • Short-circuit
  • Test bench

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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