[131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors

M. Landel, C. Gautier, D. Labrousse, S. Lefebvre

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

This paper presents experimental robustness of 600 V GaN High Electron Mobility Transistors (HEMT) submitted to Short-Circuits (SC) operation modes. A dedicated secured test bench has been developed and designed in order to protect as quickly as possible the Device Under Test (DUT) after failure. Some devices featured a great robustness under SC and were able to support several SC of a very long duration. On the contrary, others failed immediately at the first pulse, for a low dissipated energy. The obtained results reveal a severe dispersal in terms of SC robustness for these new emerging components. Gate behavior has been also studied, showing a leakage current during each SC, destructive or not. A part of the paper is also dedicated to the study of the effects of case temperature and DC voltage on robustness.

Original languageEnglish
Pages (from-to)560-565
Number of pages6
JournalMicroelectronics Reliability
Volume64
DOIs
Publication statusPublished - 1 Sep 2016

Fingerprint

short circuits
Short circuit currents
Transistors
transistors
High electron mobility transistors
high electron mobility transistors
Leakage currents
seats
emerging
leakage
direct current
Electric potential
electric potential
pulses
Temperature
temperature
energy

Keywords

  • Destructive
  • Dispersal
  • Failure
  • GaN HEMT
  • Leakage current
  • Oscillations
  • Robustness
  • Short-circuit
  • Test bench

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

[131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors. / Landel, M.; Gautier, C.; Labrousse, D.; Lefebvre, S.

In: Microelectronics Reliability, Vol. 64, 01.09.2016, p. 560-565.

Research output: Contribution to journalArticle

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