If you made any changes in Pure these will be visible here soon.

Research Output 1993 2019

Filter
Conference article
2018

Aluminum metallization and wire bonding aging in power MOSFET modules

Ruffilli, R., Berkani, M., Dupuy, P., Lefebvre, S., Weber, Y., Warot-Fonrose, B., Marcelot, C. & Legros, M., 1 Jan 2018, In : Materials Today: Proceedings. 5, 6, p. 14641-14651 11 p.

Research output: Contribution to journalConference article

Metallizing
Aluminum
Aging of materials
Wire
Aluminum Oxide
2004
8 Citations (Scopus)

Characterisation of silicon carbide Schottky diodes and COOLMOS™ transistors at high temperature

Dupont, L., Lefebvre, S., Bontemps, S., Khatir, Z. & Meuret, R., 29 Nov 2004, In : PESC Record - IEEE Annual Power Electronics Specialists Conference. 1, p. 566-571 6 p.

Research output: Contribution to journalConference article

Schottky diodes
Diode
Silicon carbide
silicon carbides
Silicon
1999
1 Citation (Scopus)

Turn-off losses estimation for charge injection controlled non-punch-through IGBTs

Lefebvre, S. & Miserey, F., 1 Jan 1999, In : Microelectronics Journal. 30, 6, p. 563-569 7 p.

Research output: Contribution to journalConference article

Charge injection
Insulated gate bipolar transistors (IGBT)
injection
Electric potential
electric potential
1994
7 Citations (Scopus)

Thermal behaviour of PT and NPT IGBT

Calmon, F., Lefebvre, S., Chante, J. P., Ligot, D. & Reymond, B., 1 Dec 1994, In : IEE Conference Publication. 399, p. 29-34 6 p.

Research output: Contribution to journalConference article

Insulated gate bipolar transistors (IGBT)
Temperature
Hot Temperature