• 1285 Citations
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1993 …2019

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[131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors

Landel, M., Gautier, C., Labrousse, D. & Lefebvre, S., 1 Sep 2016, In : Microelectronics Reliability. 64, p. 560-565 6 p.

Research output: Contribution to journalArticle

17 Citations (Scopus)

3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions

Riccio, M., D'Alessandro, V., Irace, A., Rostaing, G., Berkani, M., Lefebvre, S. & Dupuy, P., 1 Sep 2014, In : Microelectronics Reliability. 54, 9-10, p. 1845-1850 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Ageing and failure modes of IGBT modules in high-temperature power cycling

Smet, V., Forest, F., Huselstein, J. J., Richardeau, F., Khatir, Z., Lefebvre, S. & Berkani, M., 1 Jan 2011, In : IEEE Transactions on Industrial Electronics. 58, 10, p. 4931-4941 11 p., 5711661.

Research output: Contribution to journalArticle

295 Citations (Scopus)

Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition

Oukaour, A., Tala-Ighil, B., Pouderoux, B., Tounsi, M., Bouarroudj-Berkani, M., Lefebvre, S. & Boudart, B., 1 Feb 2011, In : Microelectronics Reliability. 51, 2, p. 386-391 6 p.

Research output: Contribution to journalArticle

33 Citations (Scopus)

Ageing of SiC JFET transistors under repetitive current limitation conditions

Bouarroudj-Berkani, M., Othman, D., Lefebvre, S., Moumen, S., Khatir, Z. & Ben Sallah, T., 1 Sep 2010, In : Microelectronics Reliability. 50, 9-11, p. 1532-1537 6 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Analysis of CIC NPT IGBT's turn-off operations for high switching current level

Lefebvre, S. & Miserey, F., 1 Jan 1999, In : IEEE Transactions on Electron Devices. 46, 5, p. 1042-1049 8 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices

Pietranico, S., Lefebvre, S., Pommier, S., Berkani Bouaroudj, M. & Bontemps, S., 1 Sep 2011, In : Microelectronics Reliability. 51, 9-11, p. 1824-1829 6 p.

Research output: Contribution to journalArticle

28 Citations (Scopus)

Boundary element analysis of thermal fatigue effects on high power IGBT modules

Khatir, Z. & Lefebvre, S., 1 Jun 2004, In : Microelectronics Reliability. 44, 6, p. 929-938 10 p.

Research output: Contribution to journalArticle

24 Citations (Scopus)

Characterisation of power modules ceramic substrates for reliability aspects

Pietranico, S., Pommier, S., Lefebvre, S., Khatir, Z. & Bontemps, S., 1 Sep 2009, In : Microelectronics Reliability. 49, 9-11, p. 1260-1266 7 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)

Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application

Othman, D., Berkani, M., Lefebvre, S., Ibrahim, A., Khatir, Z. & Bouzourene, A., 1 Sep 2012, In : Microelectronics Reliability. 52, 9-10, p. 1859-1864 6 p.

Research output: Contribution to journalArticle

36 Citations (Scopus)

Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions

Bouarroudj, M., Khatir, Z., Ousten, J. P., Badel, F., Dupont, L. & Lefebvre, S., 1 Aug 2007, In : Microelectronics Reliability. 47, 9-11 SPEC. ISS., p. 1719-1724 6 p.

Research output: Contribution to journalArticle

57 Citations (Scopus)

Design of a flyback transformer using a stress-annealed iron-based nanocrystalline alloy

Costa, F., Alves, F., Benchabi, A., Simon, F. & Lefèbvre, S., 1 Jan 2002, In : EPJ Applied Physics. 18, 3, p. 173-180 8 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Distributed and coupled 2D electro-thermal model of power semiconductor devices

Belkacem, G., Lefebvre, S., Joubert, P. Y., Bouarroudj-Berkani, M., Labrousse, D. & Rostaing, G., 1 Jan 2014, In : EPJ Applied Physics. 66, 2, ap130486.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Effect of short circuit aging on safe operating area of SiC MOSFET

Nguyen, T. A., Lefebvre, S. & Azzopardi, S., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 645-651 7 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling

Dupont, L., Khatir, Z., Lefebvre, S. & Bontemps, S., 1 Sep 2006, In : Microelectronics Reliability. 46, 9-11, p. 1766-1771 6 p.

Research output: Contribution to journalArticle

85 Citations (Scopus)

Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation

Boige, F., Richardeau, F., Lefebvre, S., Blaquière, J. M., Guibaud, G. & Bourennane, A., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 598-603 6 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Estimating current distributions in power semiconductor dies under aging conditions: Bond wire liftoff and aluminum reconstruction

Nguyen, T. A., Lefebvre, S., Joubert, P. Y., Labrousse, D. & Bontemps, S., 1 Apr 2015, In : IEEE Transactions on Components, Packaging and Manufacturing Technology. 5, 4, p. 483-495 13 p., 7057669.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Estimation of a surface current distribution from 2D magnetic field measurements

Nguyen, T. A., Joubert, P. Y., Lefebvre, S. & Chaplier, G., 9 Oct 2012, In : International Journal of Applied Electromagnetics and Mechanics. 39, 1-4, p. 151-156 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Estimation of SiC JFET temperature during short-circuit operations

Berkani, M., Lefebvre, S., Boughrara, N., Khatir, Z., Faugières, J. C., Friedrichs, P. & Haddouche, A., 1 Sep 2009, In : Microelectronics Reliability. 49, 9-11, p. 1358-1362 5 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)
Open Access

Étude de l'effet du vieillissement de la couche de métallisation de composants de puissance à semi-conducteur

Translated title of the contribution: Effect of die metallization layer ageing in the case of power semiconductor devicesPietranico, S., Pommier, S., Lefebvre, S., Berkani, M., Zoubir, K., Bontemps, S. & Cadel, E., 1 Dec 2011, In : European Journal of Electrical Engineering. 14, 5, p. 569-585 17 p.

Research output: Contribution to journalArticle

Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET

Tala-Ighil, B., Trolet, J. L., Gualous, H., Mary, P. & Lefebvre, S., 1 Aug 2015, In : Microelectronics Reliability. 55, 9-10, p. 1512-1516 5 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices

Khatir, Z., Lefebvre, S. & Saint-Eve, F., 1 Feb 2007, In : Microelectronics Reliability. 47, 2-3, p. 422-428 7 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions

Lefebvre, S., Khatir, Z. & Saint-Eve, F., 1 Feb 2005, In : IEEE Transactions on Electron Devices. 52, 2, p. 276-283 8 p.

Research output: Contribution to journalArticle

68 Citations (Scopus)

Experimental investigation of the reliability of Printed Circuit Board (PCB)-embedded power dies with pressed contact made of metal foam

Pascal, Y., Labrousse, D., Petit, M., Lefebvre, S. & Costa, F., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 707-714 8 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Failure modes on low voltage power MOSFETs under high temperature application

Dupont, L., Lefebvre, S., Bouaroudj, M., Khatir, Z. & Faugières, J. C., 1 Aug 2007, In : Microelectronics Reliability. 47, 9-11 SPEC. ISS., p. 1767-1772 6 p.

Research output: Contribution to journalArticle

9 Citations (Scopus)

Imagerie électromagnétique sans contact de composants électroniques de puissance à semi-conducteurs: Application à la caractérisation du vieillissement des métallisations de surface

Translated title of the contribution: Contactless electromagnetic imaging of power electronic semiconductor devices. Application to the characterization of surface metalizations ageingNguyen, T. A., Lefebvre, S. & Joubert, P. Y., 1 Dec 2012, In : Instrumentation Mesure Metrologie. 12, 1-2, p. 65-89 25 p.

Research output: Contribution to journalArticle

In-depth investigation of metallization aging in power MOSFETs

Ruffilli, R., Berkani, M., Dupuy, P., Lefebvre, S., Weber, Y. & Legros, M., 1 Aug 2015, In : Microelectronics Reliability. 55, 9-10, p. 1966-1970 5 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Influence of the gate internal impedance on losses in a power MOS transistor switching at a high frequency in the ZVS mode

Lefebvre, S., Costa, F. & Miserey, F., 1 Jan 2002, In : IEEE Transactions on Power Electronics. 17, 1, p. 33-39 7 p.

Research output: Contribution to journalArticle

8 Citations (Scopus)

Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

Boige, F., Richardeau, F., Trémouilles, D., Lefebvre, S. & Guibaud, G., 1 Sep 2017, In : Microelectronics Reliability. 76-77, p. 500-506 7 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

Mechanisms of power module source metal degradation during electro-thermal aging

Ruffilli, R., Berkani, M., Dupuy, P., Lefebvre, S., Weber, Y. & Legros, M., 1 Sep 2017, In : Microelectronics Reliability. 76-77, p. 507-511 5 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Monitoring of ageing chips of semiconductor power modules using eddy current sensor

Nguyen, T. A., Joubert, P. Y., Lefebvre, S. & Bontemps, S., 14 Mar 2013, In : Electronics Letters. 49, 6, p. 402-404 3 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

New investigation possibilities on forward biased power devices using cross sections

Kociniewski, T., Moussodji, J., Khatir, Z., Berkani, M., Lefebvre, S. & Azzopardi, S., 1 Apr 2012, In : IEEE Electron Device Letters. 33, 4, p. 576-578 3 p., 6151010.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Optimization of the driver of gan power transistors through measurement of their thermal behavior

Hoffmann, L., Gautier, C., Lefebvre, S. & Costa, F., 1 May 2014, In : IEEE Transactions on Power Electronics. 29, 5, p. 2359-2366 8 p., 6576880.

Research output: Contribution to journalArticle

23 Citations (Scopus)

Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 v battery system applications

Rostaing, G., Berkani, M., Mechouche, D., Labrousse, D., Lefebvre, S., Khatir, Z. & Dupuy, P., 1 Sep 2013, In : Microelectronics Reliability. 53, 9-11, p. 1703-1706 4 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Robustness of 1.2 kV SiC MOSFET devices

Othman, D., Lefebvre, S., Berkani, M., Khatir, Z., Ibrahim, A. & Bouzourene, A., 1 Sep 2013, In : Microelectronics Reliability. 53, 9-11, p. 1735-1738 4 p.

Research output: Contribution to journalArticle

47 Citations (Scopus)

Robustness of SiC JFET in short-circuit modes

Boughrara, N., Moumen, S., Lefebvre, S., Khatir, Z., Friedrichs, P. & Faugieres, J. C., 1 Jan 2009, In : IEEE Electron Device Letters. 30, 1, p. 51-53 3 p.

Research output: Contribution to journalArticle

43 Citations (Scopus)

Rupture fragile et fatigue des substrats DBC, applications haute temperature

Translated title of the contribution: Fatigue and failure of DBC substrates. High temperature applicationsPietranico, S., Pommier, S., Lefebvre, S. & Khatir, Z., 1 Dec 2009, In : European Journal of Electrical Engineering. 12, 2, p. 271-289 19 p.

Research output: Contribution to journalArticle

Saturation current and on-resistance correlation during during repetitive short-circuit conditions on SiC JFET transistors

Berkani, M., Lefebvre, S. & Khatir, Z., 1 Jan 2013, In : IEEE Transactions on Power Electronics. 28, 2, p. 621-624 4 p., 6314491.

Research output: Contribution to journalArticle

13 Citations (Scopus)

SiC MOSFETs robustness for diode-less applications

Avino-Salvado, O., Cheng, C., Buttay, C., Morel, H., Labrousse, D., Lefebvre, S. & Ali, M., 3 Jul 2018, In : EPE Journal (European Power Electronics and Drives Journal). 28, 3, p. 128-135 8 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)
7 Citations (Scopus)

Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique

Nguyen, T. A., Joubert, P. Y., Lefebvre, S., Chaplier, G. & Rousseau, L., 1 Jun 2011, In : Microelectronics Reliability. 51, 6, p. 1127-1135 9 p.

Research output: Contribution to journalArticle

15 Citations (Scopus)

Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs

Chen, C., Labrousse, D., Lefebvre, S., Petit, M., Buttay, C. & Morel, H., 1 Aug 2015, In : Microelectronics Reliability. 55, 9-10, p. 1708-1713 6 p.

Research output: Contribution to journalArticle

43 Citations (Scopus)

Temperature-level effect on solder lifetime during thermal cycling of power modules

Bouarroudj, M., Khatir, Z., Ousten, J. P. & Lefebvre, S., 1 Sep 2008, In : IEEE Transactions on Device and Materials Reliability. 8, 3, p. 471-477 7 p., 4595635.

Research output: Contribution to journalArticle

22 Citations (Scopus)
32 Citations (Scopus)

Thermal fatigue and failure of electronic power device substrates

Pietranico, S., Pommier, S., Lefebvre, S. & Pattofatto, S., 1 Nov 2009, In : International Journal of Fatigue. 31, 11-12, p. 1911-1920 10 p.

Research output: Contribution to journalArticle

31 Citations (Scopus)

Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode

Aviñó Salvadó, O., Morel, H., Buttay, C., Labrousse, D. & Lefebvre, S., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 636-640 5 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Turn-off analysis of PT and NPT IGBTs in zero-current switching

Lefebvre, S., Forest, F., Costa, F. & Arnould, J., 1 Jan 1998, In : IEE Proceedings: Circuits, Devices and Systems. 145, 3, p. 185-191 7 p.

Research output: Contribution to journalArticle

Using Laminated Metal Foam as the Top-Side Contact of a PCB-Embedded Power Die

Pascal, Y., Abdedaim, A., Labrousse, D., Petit, M., Lefebvre, S. & Costa, F., 1 Oct 2017, In : IEEE Electron Device Letters. 38, 10, p. 1453-1456 4 p., 8023968.

Research output: Contribution to journalArticle

7 Citations (Scopus)