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Research Output 1993 2019

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Article
2019
5 Citations (Scopus)
MOSFET
Short circuit currents
Macros
Networks (circuits)
Modeling
2018
2 Citations (Scopus)

Effect of short circuit aging on safe operating area of SiC MOSFET

Nguyen, T. A., Lefebvre, S. & Azzopardi, S., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 645-651 7 p.

Research output: Contribution to journalArticle

short circuits
Short circuit currents
field effect transistors
Aging of materials
Leakage currents
5 Citations (Scopus)

Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation

Boige, F., Richardeau, F., Lefebvre, S., Blaquière, J. M., Guibaud, G. & Bourennane, A., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 598-603 6 p.

Research output: Contribution to journalArticle

short circuits
MOSFET devices
Short circuit currents
Failure modes
field effect transistors
1 Citation (Scopus)

Experimental investigation of the reliability of Printed Circuit Board (PCB)-embedded power dies with pressed contact made of metal foam

Pascal, Y., Labrousse, D., Petit, M., Lefebvre, S. & Costa, F., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 707-714 8 p.

Research output: Contribution to journalArticle

metal foams
printed circuits
circuit boards
Printed circuit boards
Foams
1 Citation (Scopus)

SiC MOSFETs robustness for diode-less applications

Avino-Salvado, O., Cheng, C., Buttay, C., Morel, H., Labrousse, D., Lefebvre, S. & Ali, M., 3 Jul 2018, In : EPE Journal (European Power Electronics and Drives Journal). 28, 3, p. 128-135 8 p.

Research output: Contribution to journalArticle

Silicon carbide
Diodes
Transistors
Degradation
Power electronics
2 Citations (Scopus)

Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode

Aviñó Salvadó, O., Morel, H., Buttay, C., Labrousse, D. & Lefebvre, S., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 636-640 5 p.

Research output: Contribution to journalArticle

Threshold voltage
threshold voltage
Diodes
field effect transistors
diodes
2017
12 Citations (Scopus)

Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

Boige, F., Richardeau, F., Trémouilles, D., Lefebvre, S. & Guibaud, G., 1 Sep 2017, In : Microelectronics Reliability. 76-77, p. 500-506 7 p.

Research output: Contribution to journalArticle

short circuits
Silicon carbide
silicon carbides
Short circuit currents
Oxides
4 Citations (Scopus)

Mechanisms of power module source metal degradation during electro-thermal aging

Ruffilli, R., Berkani, M., Dupuy, P., Lefebvre, S., Weber, Y. & Legros, M., 1 Sep 2017, In : Microelectronics Reliability. 76-77, p. 507-511 5 p.

Research output: Contribution to journalArticle

Thermal aging
Metals
wire
Wire
degradation
5 Citations (Scopus)

Using Laminated Metal Foam as the Top-Side Contact of a PCB-Embedded Power Die

Pascal, Y., Abdedaim, A., Labrousse, D., Petit, M., Lefebvre, S. & Costa, F., 1 Oct 2017, In : IEEE Electron Device Letters. 38, 10, p. 1453-1456 4 p., 8023968.

Research output: Contribution to journalArticle

Polychlorinated Biphenyls
Polychlorinated biphenyls
Foams
Metals
Acoustic impedance
2016
14 Citations (Scopus)

[131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors

Landel, M., Gautier, C., Labrousse, D. & Lefebvre, S., 1 Sep 2016, In : Microelectronics Reliability. 64, p. 560-565 6 p.

Research output: Contribution to journalArticle

short circuits
Short circuit currents
Transistors
transistors
High electron mobility transistors
2015
3 Citations (Scopus)

Estimating current distributions in power semiconductor dies under aging conditions: Bond wire liftoff and aluminum reconstruction

Nguyen, T. A., Lefebvre, S., Joubert, P. Y., Labrousse, D. & Bontemps, S., 1 Apr 2015, In : IEEE Transactions on Components, Packaging and Manufacturing Technology. 5, 4, p. 483-495 13 p., 7057669.

Research output: Contribution to journalArticle

Aluminum
Metallizing
Aging of materials
Wire
Semiconductor materials
4 Citations (Scopus)

Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET

Tala-Ighil, B., Trolet, J. L., Gualous, H., Mary, P. & Lefebvre, S., 1 Aug 2015, In : Microelectronics Reliability. 55, 9-10, p. 1512-1516 5 p.

Research output: Contribution to journalArticle

Junction gate field effect transistors
JFET
Radiation effects
Insulated gate bipolar transistors (IGBT)
radiation effects
3 Citations (Scopus)

In-depth investigation of metallization aging in power MOSFETs

Ruffilli, R., Berkani, M., Dupuy, P., Lefebvre, S., Weber, Y. & Legros, M., 1 Aug 2015, In : Microelectronics Reliability. 55, 9-10, p. 1966-1970 5 p.

Research output: Contribution to journalArticle

Metallizing
field effect transistors
Aging of materials
wire
Wire
40 Citations (Scopus)

Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs

Chen, C., Labrousse, D., Lefebvre, S., Petit, M., Buttay, C. & Morel, H., 1 Aug 2015, In : Microelectronics Reliability. 55, 9-10, p. 1708-1713 6 p.

Research output: Contribution to journalArticle

junction transistors
Bipolar transistors
failure modes
short circuits
bipolar transistors
2014
2 Citations (Scopus)

3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions

Riccio, M., D'Alessandro, V., Irace, A., Rostaing, G., Berkani, M., Lefebvre, S. & Dupuy, P., 1 Sep 2014, In : Microelectronics Reliability. 54, 9-10, p. 1845-1850 6 p.

Research output: Contribution to journalArticle

short circuits
Short circuit currents
field effect transistors
Aging of materials
cycles
2 Citations (Scopus)

Distributed and coupled 2D electro-thermal model of power semiconductor devices

Belkacem, G., Lefebvre, S., Joubert, P. Y., Bouarroudj-Berkani, M., Labrousse, D. & Rostaing, G., 1 Jan 2014, In : EPJ Applied Physics. 66, 2, ap130486.

Research output: Contribution to journalArticle

semiconductor devices
short circuits
aeronautics
Metallizing
Power electronics
Open Access
Eddy currents
eddy currents
modules
Aging of materials
Semiconductor materials
21 Citations (Scopus)

Optimization of the driver of gan power transistors through measurement of their thermal behavior

Hoffmann, L., Gautier, C., Lefebvre, S. & Costa, F., 1 May 2014, In : IEEE Transactions on Power Electronics. 29, 5, p. 2359-2366 8 p., 6576880.

Research output: Contribution to journalArticle

Transistors
Switching frequency
Capacitance
Substrates
Power transistors
2013
1 Citation (Scopus)

Monitoring of ageing chips of semiconductor power modules using eddy current sensor

Nguyen, T. A., Joubert, P. Y., Lefebvre, S. & Bontemps, S., 14 Mar 2013, In : Electronics Letters. 49, 6, p. 402-404 3 p.

Research output: Contribution to journalArticle

Eddy currents
Aging of materials
Semiconductor materials
Monitoring
Sensors
3 Citations (Scopus)

Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 v battery system applications

Rostaing, G., Berkani, M., Mechouche, D., Labrousse, D., Lefebvre, S., Khatir, Z. & Dupuy, P., 1 Sep 2013, In : Microelectronics Reliability. 53, 9-11, p. 1703-1706 4 p.

Research output: Contribution to journalArticle

electric batteries
field effect transistors
switches
Aging of materials
Switches
38 Citations (Scopus)

Robustness of 1.2 kV SiC MOSFET devices

Othman, D., Lefebvre, S., Berkani, M., Khatir, Z., Ibrahim, A. & Bouzourene, A., 1 Sep 2013, In : Microelectronics Reliability. 53, 9-11, p. 1735-1738 4 p.

Research output: Contribution to journalArticle

short circuits
MOSFET devices
Short circuit currents
field effect transistors
aircraft
11 Citations (Scopus)

Saturation current and on-resistance correlation during during repetitive short-circuit conditions on SiC JFET transistors

Berkani, M., Lefebvre, S. & Khatir, Z., 1 Jan 2013, In : IEEE Transactions on Power Electronics. 28, 2, p. 621-624 4 p., 6314491.

Research output: Contribution to journalArticle

Junction gate field effect transistors
Short circuit currents
Transistors
Aging of materials
Metals
2012
35 Citations (Scopus)

Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application

Othman, D., Berkani, M., Lefebvre, S., Ibrahim, A., Khatir, Z. & Bouzourene, A., 1 Sep 2012, In : Microelectronics Reliability. 52, 9-10, p. 1859-1864 6 p.

Research output: Contribution to journalArticle

Junction gate field effect transistors
JFET
aeronautics
Aviation
transistors
2 Citations (Scopus)

Estimation of a surface current distribution from 2D magnetic field measurements

Nguyen, T. A., Joubert, P. Y., Lefebvre, S. & Chaplier, G., 9 Oct 2012, In : International Journal of Applied Electromagnetics and Mechanics. 39, 1-4, p. 151-156 6 p.

Research output: Contribution to journalArticle

Magnetic field measurement
current distribution
Magnetic fields
magnetic fields
mesh

Imagerie électromagnétique sans contact de composants électroniques de puissance à semi-conducteurs: Application à la caractérisation du vieillissement des métallisations de surface

Translated title of the contribution: Contactless electromagnetic imaging of power electronic semiconductor devices. Application to the characterization of surface metalizations ageingNguyen, T. A., Lefebvre, S. & Joubert, P. Y., 1 Dec 2012, In : Instrumentation Mesure Metrologie. 12, 1-2, p. 65-89 25 p.

Research output: Contribution to journalArticle

Semiconductor devices
Power electronics
semiconductor devices
Aging of materials
electromagnetism
6 Citations (Scopus)

New investigation possibilities on forward biased power devices using cross sections

Kociniewski, T., Moussodji, J., Khatir, Z., Berkani, M., Lefebvre, S. & Azzopardi, S., 1 Apr 2012, In : IEEE Electron Device Letters. 33, 4, p. 576-578 3 p., 6151010.

Research output: Contribution to journalArticle

Insulated gate bipolar transistors (IGBT)
Silicon
Macros
Lenses
Diodes
2011
276 Citations (Scopus)

Ageing and failure modes of IGBT modules in high-temperature power cycling

Smet, V., Forest, F., Huselstein, J. J., Richardeau, F., Khatir, Z., Lefebvre, S. & Berkani, M., 1 Jan 2011, In : IEEE Transactions on Industrial Electronics. 58, 10, p. 4931-4941 11 p., 5711661.

Research output: Contribution to journalArticle

Insulated gate bipolar transistors (IGBT)
Failure modes
Aging of materials
Metallizing
Thermal stress
28 Citations (Scopus)

Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition

Oukaour, A., Tala-Ighil, B., Pouderoux, B., Tounsi, M., Bouarroudj-Berkani, M., Lefebvre, S. & Boudart, B., 1 Feb 2011, In : Microelectronics Reliability. 51, 2, p. 386-391 6 p.

Research output: Contribution to journalArticle

Insulated gate bipolar transistors (IGBT)
bipolar transistors
pattern recognition
Pattern recognition
education
27 Citations (Scopus)

A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices

Pietranico, S., Lefebvre, S., Pommier, S., Berkani Bouaroudj, M. & Bontemps, S., 1 Sep 2011, In : Microelectronics Reliability. 51, 9-11, p. 1824-1829 6 p.

Research output: Contribution to journalArticle

Metallizing
Aluminum
semiconductor devices
Aging of materials
degradation

Étude de l'effet du vieillissement de la couche de métallisation de composants de puissance à semi-conducteur

Translated title of the contribution: Effect of die metallization layer ageing in the case of power semiconductor devicesPietranico, S., Pommier, S., Lefebvre, S., Berkani, M., Zoubir, K., Bontemps, S. & Cadel, E., 1 Dec 2011, In : European Journal of Electrical Engineering. 14, 5, p. 569-585 17 p.

Research output: Contribution to journalArticle

Metallizing
Aging of materials
Degradation
Transistors
Power semiconductor devices
14 Citations (Scopus)

Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique

Nguyen, T. A., Joubert, P. Y., Lefebvre, S., Chaplier, G. & Rousseau, L., 1 Jun 2011, In : Microelectronics Reliability. 51, 6, p. 1127-1135 9 p.

Research output: Contribution to journalArticle

Semiconductor devices
Metallizing
Eddy currents
Power electronics
eddy currents
2010
16 Citations (Scopus)

Ageing of SiC JFET transistors under repetitive current limitation conditions

Bouarroudj-Berkani, M., Othman, D., Lefebvre, S., Moumen, S., Khatir, Z. & Ben Sallah, T., 1 Sep 2010, In : Microelectronics Reliability. 50, 9-11, p. 1532-1537 6 p.

Research output: Contribution to journalArticle

Junction gate field effect transistors
JFET
short circuits
Transistors
transistors
2009
20 Citations (Scopus)

Characterisation of power modules ceramic substrates for reliability aspects

Pietranico, S., Pommier, S., Lefebvre, S., Khatir, Z. & Bontemps, S., 1 Sep 2009, In : Microelectronics Reliability. 49, 9-11, p. 1260-1266 7 p.

Research output: Contribution to journalArticle

Fatigue of materials
ceramics
Power electronics
fatigue life
Substrates
7 Citations (Scopus)

Estimation of SiC JFET temperature during short-circuit operations

Berkani, M., Lefebvre, S., Boughrara, N., Khatir, Z., Faugières, J. C., Friedrichs, P. & Haddouche, A., 1 Sep 2009, In : Microelectronics Reliability. 49, 9-11, p. 1358-1362 5 p.

Research output: Contribution to journalArticle

Junction gate field effect transistors
JFET
short circuits
Short circuit currents
Transistors
42 Citations (Scopus)

Robustness of SiC JFET in short-circuit modes

Boughrara, N., Moumen, S., Lefebvre, S., Khatir, Z., Friedrichs, P. & Faugieres, J. C., 1 Jan 2009, In : IEEE Electron Device Letters. 30, 1, p. 51-53 3 p.

Research output: Contribution to journalArticle

Junction gate field effect transistors
Short circuit currents
Transistors
Insulated gate bipolar transistors (IGBT)
Crystals

Rupture fragile et fatigue des substrats DBC, applications haute temperature

Translated title of the contribution: Fatigue and failure of DBC substrates. High temperature applicationsPietranico, S., Pommier, S., Lefebvre, S. & Khatir, Z., 1 Dec 2009, In : European Journal of Electrical Engineering. 12, 2, p. 271-289 19 p.

Research output: Contribution to journalArticle

Thermal fatigue
High temperature applications
Brittle fracture
Power electronics
Fatigue of materials
30 Citations (Scopus)

Thermal fatigue and failure of electronic power device substrates

Pietranico, S., Pommier, S., Lefebvre, S. & Pattofatto, S., 1 Nov 2009, In : International Journal of Fatigue. 31, 11-12, p. 1911-1920 10 p.

Research output: Contribution to journalArticle

Thermal fatigue
Power Electronics
Power electronics
Copper
Fatigue
2008
22 Citations (Scopus)

Temperature-level effect on solder lifetime during thermal cycling of power modules

Bouarroudj, M., Khatir, Z., Ousten, J. P. & Lefebvre, S., 1 Sep 2008, In : IEEE Transactions on Device and Materials Reliability. 8, 3, p. 471-477 7 p., 4595635.

Research output: Contribution to journalArticle

Thermal cycling
Soldering alloys
Temperature
Shear strain
Shear stress
2007
55 Citations (Scopus)

Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions

Bouarroudj, M., Khatir, Z., Ousten, J. P., Badel, F., Dupont, L. & Lefebvre, S., 1 Aug 2007, In : Microelectronics Reliability. 47, 9-11 SPEC. ISS., p. 1719-1724 6 p.

Research output: Contribution to journalArticle

high temperature environments
Insulated gate bipolar transistors (IGBT)
ambient temperature
modules
degradation
12 Citations (Scopus)

Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices

Khatir, Z., Lefebvre, S. & Saint-Eve, F., 1 Feb 2007, In : Microelectronics Reliability. 47, 2-3, p. 422-428 7 p.

Research output: Contribution to journalArticle

Insulated gate bipolar transistors (IGBT)
failure modes
short circuits
Short circuit currents
Failure modes
9 Citations (Scopus)

Failure modes on low voltage power MOSFETs under high temperature application

Dupont, L., Lefebvre, S., Bouaroudj, M., Khatir, Z. & Faugières, J. C., 1 Aug 2007, In : Microelectronics Reliability. 47, 9-11 SPEC. ISS., p. 1767-1772 6 p.

Research output: Contribution to journalArticle

High temperature applications
failure modes
low voltage
Failure modes
field effect transistors
2006
79 Citations (Scopus)

Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling

Dupont, L., Khatir, Z., Lefebvre, S. & Bontemps, S., 1 Sep 2006, In : Microelectronics Reliability. 46, 9-11, p. 1766-1771 6 p.

Research output: Contribution to journalArticle

Metallizing
assemblies
ceramics
cycles
Substrates
2005
66 Citations (Scopus)

Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions

Lefebvre, S., Khatir, Z. & Saint-Eve, F., 1 Feb 2005, In : IEEE Transactions on Electron Devices. 52, 2, p. 276-283 8 p.

Research output: Contribution to journalArticle

Insulated gate bipolar transistors (IGBT)
Short circuit currents
Failure modes
Trademarks
Aging of materials
2004
23 Citations (Scopus)

Boundary element analysis of thermal fatigue effects on high power IGBT modules

Khatir, Z. & Lefebvre, S., 1 Jun 2004, In : Microelectronics Reliability. 44, 6, p. 929-938 10 p.

Research output: Contribution to journalArticle

Insulator Elements
thermal fatigue
Thermal fatigue
Insulated gate bipolar transistors (IGBT)
Copper
2002
1 Citation (Scopus)

Design of a flyback transformer using a stress-annealed iron-based nanocrystalline alloy

Costa, F., Alves, F., Benchabi, A., Simon, F. & Lefèbvre, S., 1 Jan 2002, In : EPJ Applied Physics. 18, 3, p. 173-180 8 p.

Research output: Contribution to journalArticle

Nanocrystalline alloys
transformers
Iron
iron
induction
8 Citations (Scopus)

Influence of the gate internal impedance on losses in a power MOS transistor switching at a high frequency in the ZVS mode

Lefebvre, S., Costa, F. & Miserey, F., 1 Jan 2002, In : IEEE Transactions on Power Electronics. 17, 1, p. 33-39 7 p.

Research output: Contribution to journalArticle

Zero voltage switching
Transistors
Metals
Capacitance
Electric potential
2001
32 Citations (Scopus)
Insulated gate bipolar transistors (IGBT)
boundary element method
Boundary element method
Thermoanalysis
thermal fatigue
2000
Gates (transistor)
Zero voltage switching
MOSFET devices
Impedance
transistors
1999
12 Citations (Scopus)

Analysis of CIC NPT IGBT's turn-off operations for high switching current level

Lefebvre, S. & Miserey, F., 1 Jan 1999, In : IEEE Transactions on Electron Devices. 46, 5, p. 1042-1049 8 p.

Research output: Contribution to journalArticle

Insulated gate bipolar transistors (IGBT)
Electric potential
Electric space charge
Analytical models
Current density
1998

Turn-off analysis of PT and NPT IGBTs in zero-current switching

Lefebvre, S., Forest, F., Costa, F. & Arnould, J., 1 Jan 1998, In : IEE Proceedings: Circuits, Devices and Systems. 145, 3, p. 185-191 7 p.

Research output: Contribution to journalArticle

Insulated gate bipolar transistors (IGBT)
Bipolar transistors
Carrier lifetime
Diodes
Zero current switching