• 1285 Citations
  • 18 h-Index
1993 …2019

Research output per year

If you made any changes in Pure these will be visible here soon.

Research Output

[131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors

Landel, M., Gautier, C., Labrousse, D. & Lefebvre, S., 1 Sep 2016, In : Microelectronics Reliability. 64, p. 560-565 6 p.

Research output: Contribution to journalArticle

17 Citations (Scopus)

3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions

Riccio, M., D'Alessandro, V., Irace, A., Rostaing, G., Berkani, M., Lefebvre, S. & Dupuy, P., 1 Sep 2014, In : Microelectronics Reliability. 54, 9-10, p. 1845-1850 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Ageing and failure modes of IGBT modules in high-temperature power cycling

Smet, V., Forest, F., Huselstein, J. J., Richardeau, F., Khatir, Z., Lefebvre, S. & Berkani, M., 1 Jan 2011, In : IEEE Transactions on Industrial Electronics. 58, 10, p. 4931-4941 11 p., 5711661.

Research output: Contribution to journalArticle

295 Citations (Scopus)

Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition

Oukaour, A., Tala-Ighil, B., Pouderoux, B., Tounsi, M., Bouarroudj-Berkani, M., Lefebvre, S. & Boudart, B., 1 Feb 2011, In : Microelectronics Reliability. 51, 2, p. 386-391 6 p.

Research output: Contribution to journalArticle

33 Citations (Scopus)

Ageing of SiC JFET transistors under repetitive current limitation conditions

Bouarroudj-Berkani, M., Othman, D., Lefebvre, S., Moumen, S., Khatir, Z. & Ben Sallah, T., 1 Sep 2010, In : Microelectronics Reliability. 50, 9-11, p. 1532-1537 6 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Ageing test results of low voltage MOSFET modules for electrical vehicles

Dupont, L., Lefebvre, S., Bouaroudj, M., Khatir, Z., Faugières, J. C. & Emorine, F., 1 Dec 2007, 2007 European Conference on Power Electronics and Applications, EPE. 4417433. (2007 European Conference on Power Electronics and Applications, EPE).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)

Aluminum metallization and wire bonding aging in power MOSFET modules

Ruffilli, R., Berkani, M., Dupuy, P., Lefebvre, S., Weber, Y., Warot-Fonrose, B., Marcelot, C. & Legros, M., 1 Jan 2018, In : Materials Today: Proceedings. 5, 6, p. 14641-14651 11 p.

Research output: Contribution to journalConference article

1 Citation (Scopus)

A measure using the eddy current technique on the effect of aluminum reconstruction in power semiconductor modules

Nguyen, T. A., Labrousse, D., Joubert, P. Y., Lefebvre, S. & Bontemps, S., 1 Dec 2012, Proceedings - PCIM Europe 2012: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. p. 757-766 10 p. (PCIM Europe Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

A method to improve the reliability and the fatigue life of power device substrates

Pietranico, S., Pommier, S., Lefebvre, S. & Pattofatto, S., 1 Dec 2009, 12th International Conference on Fracture 2009, ICF-12. p. 7307-7316 10 p. (12th International Conference on Fracture 2009, ICF-12; vol. 9).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Analysis of CIC NPT IGBT's turn-off operations for high switching current level

Lefebvre, S. & Miserey, F., 1 Jan 1999, In : IEEE Transactions on Electron Devices. 46, 5, p. 1042-1049 8 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Application of thermoelectricity to IGBT for temperature regulation and energy harvesting

Tian, Y., Vasic, D. & Lefebvre, S., 15 Aug 2012, Proceedings - 2012 IEEE International Symposium on Industrial Electronics, ISIE 2012. p. 211-216 6 p. 6237086. (IEEE International Symposium on Industrial Electronics).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices

Pietranico, S., Lefebvre, S., Pommier, S., Berkani Bouaroudj, M. & Bontemps, S., 1 Sep 2011, In : Microelectronics Reliability. 51, 9-11, p. 1824-1829 6 p.

Research output: Contribution to journalArticle

28 Citations (Scopus)

Banc de cyclage actif pour l'analyse de la fatigue thermique des brasures de composants IGBTs

Translated title of the contribution: Active cycling bench for analysis of thermal fatigue in the soldering of Insulated Gate Bipolar Transistor (IGBT) componentsDupont, L., Lefebvre, S., Khatir, Z., Coquery, G. & Faugières, J. C., 1 Feb 2004, In : REE, Revue de L'Electricite et de L'Electronique. 2004, 2, p. 45-51 7 p.

Research output: Contribution to journalReview article

Boundary element analysis of thermal fatigue effects on high power IGBT modules

Khatir, Z. & Lefebvre, S., 1 Jun 2004, In : Microelectronics Reliability. 44, 6, p. 929-938 10 p.

Research output: Contribution to journalArticle

24 Citations (Scopus)

Characterisation of power modules ceramic substrates for reliability aspects

Pietranico, S., Pommier, S., Lefebvre, S., Khatir, Z. & Bontemps, S., 1 Sep 2009, In : Microelectronics Reliability. 49, 9-11, p. 1260-1266 7 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)

Characterisation of silicon carbide Schottky diodes and COOLMOS™ transistors at high temperature

Dupont, L., Lefebvre, S., Bontemps, S., Khatir, Z. & Meuret, R., 29 Nov 2004, In : PESC Record - IEEE Annual Power Electronics Specialists Conference. 1, p. 566-571 6 p.

Research output: Contribution to journalConference article

8 Citations (Scopus)

Comparison of modeling switching losses of an IGBT based on the datasheet and an experimentation

Oustad, D., Lefebvre, S., Petit, M., Lhotellier, D. & Ameziani, M., 25 Oct 2016, 2016 18th European Conference on Power Electronics and Applications, EPE 2016 ECCE Europe. Institute of Electrical and Electronics Engineers Inc., 7695494. (2016 18th European Conference on Power Electronics and Applications, EPE 2016 ECCE Europe).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Comparison of stress distributions and failure modes during thermal cycling and power cycling on high power IGBT modules

Bouarroudj, M., Khatir, Z., Ousten, J. P., Dupont, L., Lefebvre, S. & Badel, F., 1 Dec 2007, 2007 European Conference on Power Electronics and Applications, EPE. 4417457. (2007 European Conference on Power Electronics and Applications, EPE).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application

Othman, D., Berkani, M., Lefebvre, S., Ibrahim, A., Khatir, Z. & Bouzourene, A., 1 Sep 2012, In : Microelectronics Reliability. 52, 9-10, p. 1859-1864 6 p.

Research output: Contribution to journalArticle

36 Citations (Scopus)

Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions

Bouarroudj, M., Khatir, Z., Ousten, J. P., Badel, F., Dupont, L. & Lefebvre, S., 1 Aug 2007, In : Microelectronics Reliability. 47, 9-11 SPEC. ISS., p. 1719-1724 6 p.

Research output: Contribution to journalArticle

57 Citations (Scopus)

Design of a flyback transformer using a stress-annealed iron-based nanocrystalline alloy

Costa, F., Alves, F., Benchabi, A., Simon, F. & Lefèbvre, S., 1 Jan 2002, In : EPJ Applied Physics. 18, 3, p. 173-180 8 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Development of testing methods for winding turn-to-turn insulation of low voltage motors fed by PWM converters

Bolgova, V., Lefebvre, S., Hlioui, S., Boucenna, N., Costa, F. & Leonov, A., 6 Nov 2017, 2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe. Institute of Electrical and Electronics Engineers Inc., 8099363. (2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe; vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Dispersion of electrical characteristics and short-circuit robustness of 600V E-mode GaN transistors

Landel, M., Lefebvre, S., Labrousse, D., Gautier, C., Zaki, F. & Khatir, Z., 1 Jan 2017, PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., 7990737. (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Distributed and coupled 2D electro-thermal model of power semiconductor devices

Belkacem, G., Lefebvre, S., Joubert, P. Y., Bouarroudj-Berkani, M., Labrousse, D. & Rostaing, G., 1 Jan 2014, In : EPJ Applied Physics. 66, 2, ap130486.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Distributed and coupled electrothermal model of power semiconductor devices

Belkacem, G., Labrousse, D., Lefebvre, S., Joubert, P. Y., Kuhne, U., Fribourg, L., Soulat, R., Florentin, E. & Rey, C., 24 May 2012, 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012. p. 84-89 6 p. 6195253. (2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Effect of short circuit aging on safe operating area of SiC MOSFET

Nguyen, T. A., Lefebvre, S. & Azzopardi, S., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 645-651 7 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling

Dupont, L., Khatir, Z., Lefebvre, S. & Bontemps, S., 1 Sep 2006, In : Microelectronics Reliability. 46, 9-11, p. 1766-1771 6 p.

Research output: Contribution to journalArticle

85 Citations (Scopus)

Electrical characterizations and evaluation of thermo-mechanical stresses of a power module dedicated to high temperature applications

Dupont, L., Khatir, Z., Lefebvre, S., Meuret, R., Parmentier, B. & Bontemps, S., 1 Dec 2005, 2005 European Conference on Power Electronics and Applications. 1665770. (2005 European Conference on Power Electronics and Applications; vol. 2005).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation

Boige, F., Richardeau, F., Lefebvre, S., Blaquière, J. M., Guibaud, G. & Bourennane, A., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 598-603 6 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Estimating current distributions in power semiconductor dies under aging conditions: Bond wire liftoff and aluminum reconstruction

Nguyen, T. A., Lefebvre, S., Joubert, P. Y., Labrousse, D. & Bontemps, S., 1 Apr 2015, In : IEEE Transactions on Components, Packaging and Manufacturing Technology. 5, 4, p. 483-495 13 p., 7057669.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Estimation of a surface current distribution from 2D magnetic field measurements

Nguyen, T. A., Joubert, P. Y., Lefebvre, S. & Chaplier, G., 9 Oct 2012, In : International Journal of Applied Electromagnetics and Mechanics. 39, 1-4, p. 151-156 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Estimation of SiC JFET temperature during short-circuit operations

Berkani, M., Lefebvre, S., Boughrara, N., Khatir, Z., Faugières, J. C., Friedrichs, P. & Haddouche, A., 1 Sep 2009, In : Microelectronics Reliability. 49, 9-11, p. 1358-1362 5 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)
Open Access

Estimation of the losses in Si and SiC power modules for automotive applications

Oustad, D., Lefebvre, S., Petit, M., Ameziani, M. & Lhotellier, D., 1 Jan 2017, PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., 7990929. (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Étude de l'effet du vieillissement de la couche de métallisation de composants de puissance à semi-conducteur

Translated title of the contribution: Effect of die metallization layer ageing in the case of power semiconductor devicesPietranico, S., Pommier, S., Lefebvre, S., Berkani, M., Zoubir, K., Bontemps, S. & Cadel, E., 1 Dec 2011, In : European Journal of Electrical Engineering. 14, 5, p. 569-585 17 p.

Research output: Contribution to journalArticle

Evaluation of substrate technologies under high temperature cycling

Dupont, L., Lefebvre, S., Khatir, Z. & Bontemps, S., 1 Jan 2006, 2006 4th International Conference on Integrated Power Systems, CIPS 2006. Institute of Electrical and Electronics Engineers Inc., 5758029. (2006 4th International Conference on Integrated Power Systems, CIPS 2006).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET

Tala-Ighil, B., Trolet, J. L., Gualous, H., Mary, P. & Lefebvre, S., 1 Aug 2015, In : Microelectronics Reliability. 55, 9-10, p. 1512-1516 5 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices

Khatir, Z., Lefebvre, S. & Saint-Eve, F., 1 Feb 2007, In : Microelectronics Reliability. 47, 2-3, p. 422-428 7 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions

Lefebvre, S., Khatir, Z. & Saint-Eve, F., 1 Feb 2005, In : IEEE Transactions on Electron Devices. 52, 2, p. 276-283 8 p.

Research output: Contribution to journalArticle

68 Citations (Scopus)

Experimental investigation of the reliability of Printed Circuit Board (PCB)-embedded power dies with pressed contact made of metal foam

Pascal, Y., Labrousse, D., Petit, M., Lefebvre, S. & Costa, F., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 707-714 8 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Experimental investigations of trench field stop IGBT under repetitive short-circuits operations

Arab, M., Lefebvre, S., Khatir, Z. & Bontemps, S., 29 Sep 2008, PESC '08 - 39th IEEE Annual Power Electronics Specialists Conference - Proceedings. p. 4355-4360 6 p. 4592645. (PESC Record - IEEE Annual Power Electronics Specialists Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

29 Citations (Scopus)

Failure modes and robustness of SiC JFET transistors under current limiting operations

Bouarroudj-Berkani, M., Lefebvre, S., Othman, D., Sabrine, S. M., Khatir, Z. & Salah, T. B., 11 Oct 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011. 6020356. (Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Failure modes on low voltage power MOSFETs under high temperature application

Dupont, L., Lefebvre, S., Bouaroudj, M., Khatir, Z. & Faugières, J. C., 1 Aug 2007, In : Microelectronics Reliability. 47, 9-11 SPEC. ISS., p. 1767-1772 6 p.

Research output: Contribution to journalArticle

9 Citations (Scopus)

Faults Detection and Diagnosis in a Static Converter

Benbouzid, M., Delpha, C., Khatir, Z., Lefebvre, S. & Diallo, D., 14 Feb 2013, Electrical Machines Diagnosis. John Wiley and Sons, p. 271-319 49 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

4 Citations (Scopus)

Gate leakage-current, damaged gate and open-circuit failure-mode of recent SiC Power Mosfet: Overview and analysis of unique properties for converter protection and possible future safety management

Richardeau, F., Boige, F. & Lefebvre, S., 9 Jan 2019, 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018. Institute of Electrical and Electronics Engineers Inc., 8607551. (2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Imagerie électromagnétique sans contact de composants électroniques de puissance à semi-conducteurs: Application à la caractérisation du vieillissement des métallisations de surface

Translated title of the contribution: Contactless electromagnetic imaging of power electronic semiconductor devices. Application to the characterization of surface metalizations ageingNguyen, T. A., Lefebvre, S. & Joubert, P. Y., 1 Dec 2012, In : Instrumentation Mesure Metrologie. 12, 1-2, p. 65-89 25 p.

Research output: Contribution to journalArticle

In-depth investigation of metallization aging in power MOSFETs

Ruffilli, R., Berkani, M., Dupuy, P., Lefebvre, S., Weber, Y. & Legros, M., 1 Aug 2015, In : Microelectronics Reliability. 55, 9-10, p. 1966-1970 5 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Indirect thermal measurement on SIC JFET transistors

Moumen, S., Lefebvre, S., Khatir, Z. & Faugières, J. C., 1 Dec 2009, 2009 13th European Conference on Power Electronics and Applications, EPE '09. 5278880. (2009 13th European Conference on Power Electronics and Applications, EPE '09).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Influence of repetitions of short-circuit conditions on IGBT lifetime

Saint-Eve, F., Lefebvre, S. & Khatir, Z., 1 Jan 2005, In : EPE Journal (European Power Electronics and Drives Journal). 15, 4, p. 7-12 6 p.

Research output: Contribution to journalReview article

4 Citations (Scopus)