• 1253 Citations
  • 18 h-Index
1993 …2019

Research output per year

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Research Output

1993

Maximum switching frequency choice for IGBT used in ZCS mode

Lefebvre, S., Forest, F. & Chante, J. P., 1 Dec 1993, Materials and Devices. Anon (ed.). 377 ed. Publ by IEE, p. 356-361 6 p. (IEE Conference Publication; vol. 2, no. 377).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)
1994

Quantification and minimization of conducted interferences generated in hard switching and zero current switching cells

Costa, F., Laboure, E., Forest, F. & Lefebvre, S., 1 Jan 1994, Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC. Publ by IEEE, p. 615-621 7 p. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; vol. 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Thermal behaviour of PT and NPT IGBT

Calmon, F., Lefebvre, S., Chante, J. P., Ligot, D. & Reymond, B., 1 Dec 1994, In : IEE Conference Publication. 399, p. 29-34 6 p.

Research output: Contribution to journalConference article

7 Citations (Scopus)

Turn-off analysis of the IGBT used in ZCS mode

Lefebvre, S., Forest, F., Calmon, F. & Chante, J. P., 1 Dec 1994, p. 99-104. 6 p.

Research output: Contribution to conferencePaper

1 Citation (Scopus)
1998

Turn-off analysis of PT and NPT IGBTs in zero-current switching

Lefebvre, S., Forest, F., Costa, F. & Arnould, J., 1 Jan 1998, In : IEE Proceedings: Circuits, Devices and Systems. 145, 3, p. 185-191 7 p.

Research output: Contribution to journalArticle

1999

Analysis of CIC NPT IGBT's turn-off operations for high switching current level

Lefebvre, S. & Miserey, F., 1 Jan 1999, In : IEEE Transactions on Electron Devices. 46, 5, p. 1042-1049 8 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Turn-off losses estimation for charge injection controlled non-punch-through IGBTs

Lefebvre, S. & Miserey, F., 1 Jan 1999, In : Microelectronics Journal. 30, 6, p. 563-569 7 p.

Research output: Contribution to journalConference article

1 Citation (Scopus)
2000

Thermal analysis of high power IGBT modules

Khatir, Z. & Lefebvre, S., 1 Dec 2000, p. 271-274. 4 p.

Research output: Contribution to conferencePaper

8 Citations (Scopus)
2001
32 Citations (Scopus)
2002

Design of a flyback transformer using a stress-annealed iron-based nanocrystalline alloy

Costa, F., Alves, F., Benchabi, A., Simon, F. & Lefèbvre, S., 1 Jan 2002, In : EPJ Applied Physics. 18, 3, p. 173-180 8 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Influence of the gate internal impedance on losses in a power MOS transistor switching at a high frequency in the ZVS mode

Lefebvre, S., Costa, F. & Miserey, F., 1 Jan 2002, In : IEEE Transactions on Power Electronics. 17, 1, p. 33-39 7 p.

Research output: Contribution to journalArticle

8 Citations (Scopus)
2003

Reliability of CoolMOS™ under extremely hard repetitive electrical working conditions

Saint-Eve, F., Lefebvre, S. & Khatir, Z., 1 Sep 2003, p. 312-315. 4 p.

Research output: Contribution to conferencePaper

3 Citations (Scopus)
2004

Banc de cyclage actif pour l'analyse de la fatigue thermique des brasures de composants IGBTs

Translated title of the contribution: Active cycling bench for analysis of thermal fatigue in the soldering of Insulated Gate Bipolar Transistor (IGBT) componentsDupont, L., Lefebvre, S., Khatir, Z., Coquery, G. & Faugières, J. C., 1 Feb 2004, In : REE, Revue de L'Electricite et de L'Electronique. 2004, 2, p. 45-51 7 p.

Research output: Contribution to journalReview article

Boundary element analysis of thermal fatigue effects on high power IGBT modules

Khatir, Z. & Lefebvre, S., 1 Jun 2004, In : Microelectronics Reliability. 44, 6, p. 929-938 10 p.

Research output: Contribution to journalArticle

24 Citations (Scopus)

Characterisation of silicon carbide Schottky diodes and COOLMOS™ transistors at high temperature

Dupont, L., Lefebvre, S., Bontemps, S., Khatir, Z. & Meuret, R., 29 Nov 2004, In : PESC Record - IEEE Annual Power Electronics Specialists Conference. 1, p. 566-571 6 p.

Research output: Contribution to journalConference article

8 Citations (Scopus)
2005

Electrical characterizations and evaluation of thermo-mechanical stresses of a power module dedicated to high temperature applications

Dupont, L., Khatir, Z., Lefebvre, S., Meuret, R., Parmentier, B. & Bontemps, S., 1 Dec 2005, 2005 European Conference on Power Electronics and Applications. 1665770. (2005 European Conference on Power Electronics and Applications; vol. 2005).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions

Lefebvre, S., Khatir, Z. & Saint-Eve, F., 1 Feb 2005, In : IEEE Transactions on Electron Devices. 52, 2, p. 276-283 8 p.

Research output: Contribution to journalArticle

68 Citations (Scopus)

Influence of repetitions of short-circuit conditions on IGBT lifetime

Saint-Eve, F., Lefebvre, S. & Khatir, Z., 1 Jan 2005, In : EPE Journal (European Power Electronics and Drives Journal). 15, 4, p. 7-12 6 p.

Research output: Contribution to journalReview article

4 Citations (Scopus)
2006

Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling

Dupont, L., Khatir, Z., Lefebvre, S. & Bontemps, S., 1 Sep 2006, In : Microelectronics Reliability. 46, 9-11, p. 1766-1771 6 p.

Research output: Contribution to journalArticle

82 Citations (Scopus)

Evaluation of substrate technologies under high temperature cycling

Dupont, L., Lefebvre, S., Khatir, Z. & Bontemps, S., 1 Jan 2006, 2006 4th International Conference on Integrated Power Systems, CIPS 2006. Institute of Electrical and Electronics Engineers Inc., 5758029. (2006 4th International Conference on Integrated Power Systems, CIPS 2006).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)
2007

Ageing test results of low voltage MOSFET modules for electrical vehicles

Dupont, L., Lefebvre, S., Bouaroudj, M., Khatir, Z., Faugières, J. C. & Emorine, F., 1 Dec 2007, 2007 European Conference on Power Electronics and Applications, EPE. 4417433. (2007 European Conference on Power Electronics and Applications, EPE).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Comparison of stress distributions and failure modes during thermal cycling and power cycling on high power IGBT modules

Bouarroudj, M., Khatir, Z., Ousten, J. P., Dupont, L., Lefebvre, S. & Badel, F., 1 Dec 2007, 2007 European Conference on Power Electronics and Applications, EPE. 4417457. (2007 European Conference on Power Electronics and Applications, EPE).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions

Bouarroudj, M., Khatir, Z., Ousten, J. P., Badel, F., Dupont, L. & Lefebvre, S., 1 Aug 2007, In : Microelectronics Reliability. 47, 9-11 SPEC. ISS., p. 1719-1724 6 p.

Research output: Contribution to journalArticle

56 Citations (Scopus)

Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices

Khatir, Z., Lefebvre, S. & Saint-Eve, F., 1 Feb 2007, In : Microelectronics Reliability. 47, 2-3, p. 422-428 7 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

Failure modes on low voltage power MOSFETs under high temperature application

Dupont, L., Lefebvre, S., Bouaroudj, M., Khatir, Z. & Faugières, J. C., 1 Aug 2007, In : Microelectronics Reliability. 47, 9-11 SPEC. ISS., p. 1767-1772 6 p.

Research output: Contribution to journalArticle

9 Citations (Scopus)

Thermo-mechanical investigations on the effects of the solder meniscus design in solder joint lifetime for power electronic devices

Bouarroudj, M., Khatir, Z., Lefebvre, S. & Dupont, L., 27 Nov 2007, EuroSime 2007: International Conference on Thermal, Mechanical and Multi-Physics Simulation Experiments in Microelectronics and Micro-Systems, 2007. 4201184. (EuroSime 2007: International Conference on Thermal, Mechanical and Multi-Physics Simulation Experiments in Microelectronics and Micro-Systems, 2007).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)
2008

Experimental investigations of trench field stop IGBT under repetitive short-circuits operations

Arab, M., Lefebvre, S., Khatir, Z. & Bontemps, S., 29 Sep 2008, PESC '08 - 39th IEEE Annual Power Electronics Specialists Conference - Proceedings. p. 4355-4360 6 p. 4592645. (PESC Record - IEEE Annual Power Electronics Specialists Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

29 Citations (Scopus)

Temperature-level effect on solder lifetime during thermal cycling of power modules

Bouarroudj, M., Khatir, Z., Ousten, J. P. & Lefebvre, S., 1 Sep 2008, In : IEEE Transactions on Device and Materials Reliability. 8, 3, p. 471-477 7 p., 4595635.

Research output: Contribution to journalArticle

22 Citations (Scopus)

Temperature levels effects on the thermo-mechanical behaviour of solder attach during thermal cycling of power electronic modules

Bouarroudj, M., Khatir, Z. & Lefebvre, S., 29 Sep 2008, PESC '08 - 39th IEEE Annual Power Electronics Specialists Conference - Proceedings. p. 2435-2440 6 p. 4592306. (PESC Record - IEEE Annual Power Electronics Specialists Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)
2009

A method to improve the reliability and the fatigue life of power device substrates

Pietranico, S., Pommier, S., Lefebvre, S. & Pattofatto, S., 1 Dec 2009, 12th International Conference on Fracture 2009, ICF-12. p. 7307-7316 10 p. (12th International Conference on Fracture 2009, ICF-12; vol. 9).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Characterisation of power modules ceramic substrates for reliability aspects

Pietranico, S., Pommier, S., Lefebvre, S., Khatir, Z. & Bontemps, S., 1 Sep 2009, In : Microelectronics Reliability. 49, 9-11, p. 1260-1266 7 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)

Estimation of SiC JFET temperature during short-circuit operations

Berkani, M., Lefebvre, S., Boughrara, N., Khatir, Z., Faugières, J. C., Friedrichs, P. & Haddouche, A., 1 Sep 2009, In : Microelectronics Reliability. 49, 9-11, p. 1358-1362 5 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Indirect thermal measurement on SIC JFET transistors

Moumen, S., Lefebvre, S., Khatir, Z. & Faugières, J. C., 1 Dec 2009, 2009 13th European Conference on Power Electronics and Applications, EPE '09. 5278880. (2009 13th European Conference on Power Electronics and Applications, EPE '09).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Robustness of SiC JFET in short-circuit modes

Boughrara, N., Moumen, S., Lefebvre, S., Khatir, Z., Friedrichs, P. & Faugieres, J. C., 1 Jan 2009, In : IEEE Electron Device Letters. 30, 1, p. 51-53 3 p.

Research output: Contribution to journalArticle

43 Citations (Scopus)

Rupture fragile et fatigue des substrats DBC, applications haute temperature

Translated title of the contribution: Fatigue and failure of DBC substrates. High temperature applicationsPietranico, S., Pommier, S., Lefebvre, S. & Khatir, Z., 1 Dec 2009, In : European Journal of Electrical Engineering. 12, 2, p. 271-289 19 p.

Research output: Contribution to journalArticle

Thermal fatigue and failure of electronic power device substrates

Pietranico, S., Pommier, S., Lefebvre, S. & Pattofatto, S., 1 Nov 2009, In : International Journal of Fatigue. 31, 11-12, p. 1911-1920 10 p.

Research output: Contribution to journalArticle

30 Citations (Scopus)
2010

Ageing of SiC JFET transistors under repetitive current limitation conditions

Bouarroudj-Berkani, M., Othman, D., Lefebvre, S., Moumen, S., Khatir, Z. & Ben Sallah, T., 1 Sep 2010, In : Microelectronics Reliability. 50, 9-11, p. 1532-1537 6 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)
2011

Ageing and failure modes of IGBT modules in high-temperature power cycling

Smet, V., Forest, F., Huselstein, J. J., Richardeau, F., Khatir, Z., Lefebvre, S. & Berkani, M., 1 Jan 2011, In : IEEE Transactions on Industrial Electronics. 58, 10, p. 4931-4941 11 p., 5711661.

Research output: Contribution to journalArticle

288 Citations (Scopus)

Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition

Oukaour, A., Tala-Ighil, B., Pouderoux, B., Tounsi, M., Bouarroudj-Berkani, M., Lefebvre, S. & Boudart, B., 1 Feb 2011, In : Microelectronics Reliability. 51, 2, p. 386-391 6 p.

Research output: Contribution to journalArticle

31 Citations (Scopus)

A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices

Pietranico, S., Lefebvre, S., Pommier, S., Berkani Bouaroudj, M. & Bontemps, S., 1 Sep 2011, In : Microelectronics Reliability. 51, 9-11, p. 1824-1829 6 p.

Research output: Contribution to journalArticle

27 Citations (Scopus)

Étude de l'effet du vieillissement de la couche de métallisation de composants de puissance à semi-conducteur

Translated title of the contribution: Effect of die metallization layer ageing in the case of power semiconductor devicesPietranico, S., Pommier, S., Lefebvre, S., Berkani, M., Zoubir, K., Bontemps, S. & Cadel, E., 1 Dec 2011, In : European Journal of Electrical Engineering. 14, 5, p. 569-585 17 p.

Research output: Contribution to journalArticle

Failure modes and robustness of SiC JFET transistors under current limiting operations

Bouarroudj-Berkani, M., Lefebvre, S., Othman, D., Sabrine, S. M., Khatir, Z. & Salah, T. B., 11 Oct 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011. 6020356. (Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique

Nguyen, T. A., Joubert, P. Y., Lefebvre, S., Chaplier, G. & Rousseau, L., 1 Jun 2011, In : Microelectronics Reliability. 51, 6, p. 1127-1135 9 p.

Research output: Contribution to journalArticle

14 Citations (Scopus)
2012

A measure using the eddy current technique on the effect of aluminum reconstruction in power semiconductor modules

Nguyen, T. A., Labrousse, D., Joubert, P. Y., Lefebvre, S. & Bontemps, S., 1 Dec 2012, Proceedings - PCIM Europe 2012: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. p. 757-766 10 p. (PCIM Europe Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Application of thermoelectricity to IGBT for temperature regulation and energy harvesting

Tian, Y., Vasic, D. & Lefebvre, S., 15 Aug 2012, Proceedings - 2012 IEEE International Symposium on Industrial Electronics, ISIE 2012. p. 211-216 6 p. 6237086. (IEEE International Symposium on Industrial Electronics).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application

Othman, D., Berkani, M., Lefebvre, S., Ibrahim, A., Khatir, Z. & Bouzourene, A., 1 Sep 2012, In : Microelectronics Reliability. 52, 9-10, p. 1859-1864 6 p.

Research output: Contribution to journalArticle

35 Citations (Scopus)

Distributed and coupled electrothermal model of power semiconductor devices

Belkacem, G., Labrousse, D., Lefebvre, S., Joubert, P. Y., Kuhne, U., Fribourg, L., Soulat, R., Florentin, E. & Rey, C., 24 May 2012, 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012. p. 84-89 6 p. 6195253. (2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Estimation of a surface current distribution from 2D magnetic field measurements

Nguyen, T. A., Joubert, P. Y., Lefebvre, S. & Chaplier, G., 9 Oct 2012, In : International Journal of Applied Electromagnetics and Mechanics. 39, 1-4, p. 151-156 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Imagerie électromagnétique sans contact de composants électroniques de puissance à semi-conducteurs: Application à la caractérisation du vieillissement des métallisations de surface

Translated title of the contribution: Contactless electromagnetic imaging of power electronic semiconductor devices. Application to the characterization of surface metalizations ageingNguyen, T. A., Lefebvre, S. & Joubert, P. Y., 1 Dec 2012, In : Instrumentation Mesure Metrologie. 12, 1-2, p. 65-89 25 p.

Research output: Contribution to journalArticle