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Research Output 1993 2019

2019
1 Citation (Scopus)

Gate leakage-current, damaged gate and open-circuit failure-mode of recent SiC Power Mosfet: Overview and analysis of unique properties for converter protection and possible future safety management

Richardeau, F., Boige, F. & Lefebvre, S., 9 Jan 2019, 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018. Institute of Electrical and Electronics Engineers Inc., 8607551. (2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Leakage Current
MOSFET
Failure Mode
Power electronics
Silicon carbide
5 Citations (Scopus)
MOSFET
Short circuit currents
Macros
Networks (circuits)
Modeling
2018

Aluminum metallization and wire bonding aging in power MOSFET modules

Ruffilli, R., Berkani, M., Dupuy, P., Lefebvre, S., Weber, Y., Warot-Fonrose, B., Marcelot, C. & Legros, M., 1 Jan 2018, In : Materials Today: Proceedings. 5, 6, p. 14641-14651 11 p.

Research output: Contribution to journalConference article

Metallizing
Aluminum
Aging of materials
Wire
Aluminum Oxide
2 Citations (Scopus)

Effect of short circuit aging on safe operating area of SiC MOSFET

Nguyen, T. A., Lefebvre, S. & Azzopardi, S., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 645-651 7 p.

Research output: Contribution to journalArticle

short circuits
Short circuit currents
field effect transistors
Aging of materials
Leakage currents
5 Citations (Scopus)

Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation

Boige, F., Richardeau, F., Lefebvre, S., Blaquière, J. M., Guibaud, G. & Bourennane, A., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 598-603 6 p.

Research output: Contribution to journalArticle

short circuits
MOSFET devices
Short circuit currents
Failure modes
field effect transistors
1 Citation (Scopus)

Experimental investigation of the reliability of Printed Circuit Board (PCB)-embedded power dies with pressed contact made of metal foam

Pascal, Y., Labrousse, D., Petit, M., Lefebvre, S. & Costa, F., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 707-714 8 p.

Research output: Contribution to journalArticle

metal foams
printed circuits
circuit boards
Printed circuit boards
Foams

Inverse thermal model of temperature-to-power mapping for GaN systems

Zhang, S., Laboure, E., Labrousse, D. & Lefebvre, S., 1 Jan 2018, PCIM Europe Conference Proceedings. Scharf, A. (ed.). 225809 ed. Mesago PCIM GmbH, p. 939-943 5 p. (PCIM Europe Conference Proceedings; no. 225809).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Polychlorinated biphenyls
Inverse problems
Heat conduction
Thermal noise
Constrained optimization
1 Citation (Scopus)

Pcb-embedding of power dies using pressed metal foam

Pascal, Y., Labrousse, D., Petit, M., Lefebvre, S. & Costa, F., 1 Jan 2018, PCIM Europe Conference Proceedings. Scharf, A. (ed.). 225809 ed. Mesago PCIM GmbH, p. 1451-1438 14 p. (PCIM Europe Conference Proceedings; no. 225809).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Foams
Metals
Polychlorinated biphenyls
Inductance
Wire
1 Citation (Scopus)

SiC MOSFETs robustness for diode-less applications

Avino-Salvado, O., Cheng, C., Buttay, C., Morel, H., Labrousse, D., Lefebvre, S. & Ali, M., 3 Jul 2018, In : EPE Journal (European Power Electronics and Drives Journal). 28, 3, p. 128-135 8 p.

Research output: Contribution to journalArticle

Silicon carbide
Diodes
Transistors
Degradation
Power electronics

Thermoelectric cooling for bare dies power devices embedded in pcb substrates

Zhang, S., Laboure, E., Labrousselabrousse, D. & Lefebvre, S., 1 Jan 2018, PCIM Europe Conference Proceedings. Scharf, A. (ed.). 225809 ed. Mesago PCIM GmbH, p. 1408-1415 8 p. (PCIM Europe Conference Proceedings; no. 225809).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Cooling
Substrates
Polychlorinated biphenyls
Heat flux
Experiments
2 Citations (Scopus)

Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode

Aviñó Salvadó, O., Morel, H., Buttay, C., Labrousse, D. & Lefebvre, S., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 636-640 5 p.

Research output: Contribution to journalArticle

Threshold voltage
threshold voltage
Diodes
field effect transistors
diodes
2017
1 Citation (Scopus)

Development of testing methods for winding turn-to-turn insulation of low voltage motors fed by PWM converters

Bolgova, V., Lefebvre, S., Hlioui, S., Boucenna, N., Costa, F. & Leonov, A., 6 Nov 2017, 2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe. Institute of Electrical and Electronics Engineers Inc., 8099363. (2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe; vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Pulse width modulation
Insulation
Testing
Electric potential
Energy gap
4 Citations (Scopus)

Dispersion of electrical characteristics and short-circuit robustness of 600V E-mode GaN transistors

Landel, M., Lefebvre, S., Labrousse, D., Gautier, C., Zaki, F. & Khatir, Z., 1 Jan 2017, PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., 7990737. (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Short circuit currents
Transistors
Robustness
Voltage
Electric potential
3 Citations (Scopus)

Estimation of the losses in Si and SiC power modules for automotive applications

Oustad, D., Lefebvre, S., Petit, M., Ameziani, M. & Lhotellier, D., 1 Jan 2017, PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., 7990929. (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Silicon
Module
Insulated gate bipolar transistors (IGBT)
MOSFET
12 Citations (Scopus)

Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

Boige, F., Richardeau, F., Trémouilles, D., Lefebvre, S. & Guibaud, G., 1 Sep 2017, In : Microelectronics Reliability. 76-77, p. 500-506 7 p.

Research output: Contribution to journalArticle

short circuits
Silicon carbide
silicon carbides
Short circuit currents
Oxides
4 Citations (Scopus)

Mechanisms of power module source metal degradation during electro-thermal aging

Ruffilli, R., Berkani, M., Dupuy, P., Lefebvre, S., Weber, Y. & Legros, M., 1 Sep 2017, In : Microelectronics Reliability. 76-77, p. 507-511 5 p.

Research output: Contribution to journalArticle

Thermal aging
Metals
wire
Wire
degradation
7 Citations (Scopus)

Thermal management for GaN power devices mounted on PCB substrates

Zhang, S., Laboure, E., Labrousse, D. & Lefebvre, S., 31 May 2017, 2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017. Institute of Electrical and Electronics Engineers Inc., 7936752. (2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Printed circuit boards
Switching frequency
Substrates
High electron mobility transistors
Heat resistance
5 Citations (Scopus)

Using Laminated Metal Foam as the Top-Side Contact of a PCB-Embedded Power Die

Pascal, Y., Abdedaim, A., Labrousse, D., Petit, M., Lefebvre, S. & Costa, F., 1 Oct 2017, In : IEEE Electron Device Letters. 38, 10, p. 1453-1456 4 p., 8023968.

Research output: Contribution to journalArticle

Polychlorinated Biphenyls
Polychlorinated biphenyls
Foams
Metals
Acoustic impedance
2016
14 Citations (Scopus)

[131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors

Landel, M., Gautier, C., Labrousse, D. & Lefebvre, S., 1 Sep 2016, In : Microelectronics Reliability. 64, p. 560-565 6 p.

Research output: Contribution to journalArticle

short circuits
Short circuit currents
Transistors
transistors
High electron mobility transistors
4 Citations (Scopus)

Comparison of modeling switching losses of an IGBT based on the datasheet and an experimentation

Oustad, D., Lefebvre, S., Petit, M., Lhotellier, D. & Ameziani, M., 25 Oct 2016, 2016 18th European Conference on Power Electronics and Applications, EPE 2016 ECCE Europe. Institute of Electrical and Electronics Engineers Inc., 7695494. (2016 18th European Conference on Power Electronics and Applications, EPE 2016 ECCE Europe).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Insulated gate bipolar transistors (IGBT)
Networks (circuits)
Electric vehicles
1 Citation (Scopus)

PCB integration of a magnetic component dedicated to a power factor corrector converter

Hérault, G., Labrousse, D., Mercier, A. & Lefebvre, S., 1 Jan 2016, PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., p. 1647-1654 8 p. 7499550. (PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Corrector
Polychlorinated biphenyls
Converter
Magnetic materials
Switching frequency

Surface analysis of smart power top metal: IR thermal measurement and source potential mapping

Berkani, M., Lefebvre, S., Rostaing, G., Riccio, M., Irace, A., Ruffilli, R. & Dupuy, P., 25 Jul 2016, Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., p. 395-398 4 p. 7520861. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2016-July).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thermal aging
Surface analysis
Metallizing
Temperature measurement
Short circuit currents
2015
3 Citations (Scopus)

Estimating current distributions in power semiconductor dies under aging conditions: Bond wire liftoff and aluminum reconstruction

Nguyen, T. A., Lefebvre, S., Joubert, P. Y., Labrousse, D. & Bontemps, S., 1 Apr 2015, In : IEEE Transactions on Components, Packaging and Manufacturing Technology. 5, 4, p. 483-495 13 p., 7057669.

Research output: Contribution to journalArticle

Aluminum
Metallizing
Aging of materials
Wire
Semiconductor materials
4 Citations (Scopus)

Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET

Tala-Ighil, B., Trolet, J. L., Gualous, H., Mary, P. & Lefebvre, S., 1 Aug 2015, In : Microelectronics Reliability. 55, 9-10, p. 1512-1516 5 p.

Research output: Contribution to journalArticle

Junction gate field effect transistors
JFET
Radiation effects
Insulated gate bipolar transistors (IGBT)
radiation effects
3 Citations (Scopus)

In-depth investigation of metallization aging in power MOSFETs

Ruffilli, R., Berkani, M., Dupuy, P., Lefebvre, S., Weber, Y. & Legros, M., 1 Aug 2015, In : Microelectronics Reliability. 55, 9-10, p. 1966-1970 5 p.

Research output: Contribution to journalArticle

Metallizing
field effect transistors
Aging of materials
wire
Wire
18 Citations (Scopus)

Robustness in short-circuit Mode of SiC MOSFETs

Chen, C., Labrousse, D., Lefebvre, S., Petit, M., Buttay, C. & Morel, H., 1 Jan 2015, PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. Institute of Electrical and Electronics Engineers Inc., 7149084. (PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Short circuit currents
Leakage currents
Failure modes
40 Citations (Scopus)

Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs

Chen, C., Labrousse, D., Lefebvre, S., Petit, M., Buttay, C. & Morel, H., 1 Aug 2015, In : Microelectronics Reliability. 55, 9-10, p. 1708-1713 6 p.

Research output: Contribution to journalArticle

junction transistors
Bipolar transistors
failure modes
short circuits
bipolar transistors
2014
2 Citations (Scopus)

3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions

Riccio, M., D'Alessandro, V., Irace, A., Rostaing, G., Berkani, M., Lefebvre, S. & Dupuy, P., 1 Sep 2014, In : Microelectronics Reliability. 54, 9-10, p. 1845-1850 6 p.

Research output: Contribution to journalArticle

short circuits
Short circuit currents
field effect transistors
Aging of materials
cycles
2 Citations (Scopus)

Distributed and coupled 2D electro-thermal model of power semiconductor devices

Belkacem, G., Lefebvre, S., Joubert, P. Y., Bouarroudj-Berkani, M., Labrousse, D. & Rostaing, G., 1 Jan 2014, In : EPJ Applied Physics. 66, 2, ap130486.

Research output: Contribution to journalArticle

semiconductor devices
short circuits
aeronautics
Metallizing
Power electronics
Open Access
Eddy currents
eddy currents
modules
Aging of materials
Semiconductor materials
21 Citations (Scopus)

Optimization of the driver of gan power transistors through measurement of their thermal behavior

Hoffmann, L., Gautier, C., Lefebvre, S. & Costa, F., 1 May 2014, In : IEEE Transactions on Power Electronics. 29, 5, p. 2359-2366 8 p., 6576880.

Research output: Contribution to journalArticle

Transistors
Switching frequency
Capacitance
Substrates
Power transistors
2013
4 Citations (Scopus)

Faults Detection and Diagnosis in a Static Converter

Benbouzid, M., Delpha, C., Khatir, Z., Lefebvre, S. & Diallo, D., 14 Feb 2013, Electrical Machines Diagnosis. John Wiley and Sons, p. 271-319 49 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

15 Citations (Scopus)

Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications

Othman, Lefebvre, S., Berkani, M., Khatir, Z., Ibrahim, A. & Bouzourene, A., 17 Dec 2013, 2013 15th European Conference on Power Electronics and Applications, EPE 2013. 6634665. (2013 15th European Conference on Power Electronics and Applications, EPE 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Short circuit currents
Aviation
1 Citation (Scopus)

Monitoring of ageing chips of semiconductor power modules using eddy current sensor

Nguyen, T. A., Joubert, P. Y., Lefebvre, S. & Bontemps, S., 14 Mar 2013, In : Electronics Letters. 49, 6, p. 402-404 3 p.

Research output: Contribution to journalArticle

Eddy currents
Aging of materials
Semiconductor materials
Monitoring
Sensors
3 Citations (Scopus)

Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 v battery system applications

Rostaing, G., Berkani, M., Mechouche, D., Labrousse, D., Lefebvre, S., Khatir, Z. & Dupuy, P., 1 Sep 2013, In : Microelectronics Reliability. 53, 9-11, p. 1703-1706 4 p.

Research output: Contribution to journalArticle

electric batteries
field effect transistors
switches
Aging of materials
Switches
38 Citations (Scopus)

Robustness of 1.2 kV SiC MOSFET devices

Othman, D., Lefebvre, S., Berkani, M., Khatir, Z., Ibrahim, A. & Bouzourene, A., 1 Sep 2013, In : Microelectronics Reliability. 53, 9-11, p. 1735-1738 4 p.

Research output: Contribution to journalArticle

short circuits
MOSFET devices
Short circuit currents
field effect transistors
aircraft
11 Citations (Scopus)

Saturation current and on-resistance correlation during during repetitive short-circuit conditions on SiC JFET transistors

Berkani, M., Lefebvre, S. & Khatir, Z., 1 Jan 2013, In : IEEE Transactions on Power Electronics. 28, 2, p. 621-624 4 p., 6314491.

Research output: Contribution to journalArticle

Junction gate field effect transistors
Short circuit currents
Transistors
Aging of materials
Metals

Study on aluminum reconstruction and bond wire lift-off effects on current distribution in power semiconductor dies

Nguyen, T. A., Lefebvre, S., Joubert, P. Y., Labrousse, D. & Bontemps, S., 1 Jan 2013, Proceedings - PCIM Europe 2013: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Mesago PCIM GmbH, p. 583-590 8 p. (PCIM Europe Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Metallizing
Wire
Semiconductor materials
Aluminum
Aging of materials
1 Citation (Scopus)

Thermal measurement of losses of GaN power transistors for optimization of their drive

Hoffmann, L., Gautier, C., Lefebvre, S. & Costa, F., 17 Dec 2013, 2013 15th European Conference on Power Electronics and Applications, EPE 2013. 6634623. (2013 15th European Conference on Power Electronics and Applications, EPE 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field effect transistors
Short circuit currents
Hot Temperature
Power transistors
1 Citation (Scopus)

Use of a full wave correct-by-design command to control a multilevel modular converter

Soulat, R., Herault, G., Labrousse, D., Revol, B., Feld, G., Lefebvre, S. & Fribourg, L., 17 Dec 2013, 2013 15th European Conference on Power Electronics and Applications, EPE 2013. 6634448. (2013 15th European Conference on Power Electronics and Applications, EPE 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Capacitors
Computer simulation
Experiments
2012

A measure using the eddy current technique on the effect of aluminum reconstruction in power semiconductor modules

Nguyen, T. A., Labrousse, D., Joubert, P. Y., Lefebvre, S. & Bontemps, S., 1 Dec 2012, Proceedings - PCIM Europe 2012: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. p. 757-766 10 p. (PCIM Europe Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Eddy currents
Semiconductor materials
Metallizing
Aluminum
Aluminum sheet
3 Citations (Scopus)

Application of thermoelectricity to IGBT for temperature regulation and energy harvesting

Tian, Y., Vasic, D. & Lefebvre, S., 15 Aug 2012, Proceedings - 2012 IEEE International Symposium on Industrial Electronics, ISIE 2012. p. 211-216 6 p. 6237086. (IEEE International Symposium on Industrial Electronics).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thermoelectricity
Energy harvesting
Insulated gate bipolar transistors (IGBT)
Cooling systems
Temperature
35 Citations (Scopus)

Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application

Othman, D., Berkani, M., Lefebvre, S., Ibrahim, A., Khatir, Z. & Bouzourene, A., 1 Sep 2012, In : Microelectronics Reliability. 52, 9-10, p. 1859-1864 6 p.

Research output: Contribution to journalArticle

Junction gate field effect transistors
JFET
aeronautics
Aviation
transistors

Distributed and coupled electrothermal model of power semiconductor devices

Belkacem, G., Labrousse, D., Lefebvre, S., Joubert, P. Y., Kuhne, U., Fribourg, L., Soulat, R., Florentin, E. & Rey, C., 24 May 2012, 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012. p. 84-89 6 p. 6195253. (2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Metallizing
Transistors
Temperature distribution
Current density
Aging of materials
2 Citations (Scopus)

Estimation of a surface current distribution from 2D magnetic field measurements

Nguyen, T. A., Joubert, P. Y., Lefebvre, S. & Chaplier, G., 9 Oct 2012, In : International Journal of Applied Electromagnetics and Mechanics. 39, 1-4, p. 151-156 6 p.

Research output: Contribution to journalArticle

Magnetic field measurement
current distribution
Magnetic fields
magnetic fields
mesh

Imagerie électromagnétique sans contact de composants électroniques de puissance à semi-conducteurs: Application à la caractérisation du vieillissement des métallisations de surface

Translated title of the contribution: Contactless electromagnetic imaging of power electronic semiconductor devices. Application to the characterization of surface metalizations ageingNguyen, T. A., Lefebvre, S. & Joubert, P. Y., 1 Dec 2012, In : Instrumentation Mesure Metrologie. 12, 1-2, p. 65-89 25 p.

Research output: Contribution to journalArticle

Semiconductor devices
Power electronics
semiconductor devices
Aging of materials
electromagnetism

Mechanical behavior and damage of tridimensional multilayered ceramics-tungsten power electronic substrates

Robert, C., Pommier, S., Lefebvre, S., Ortali, M. & Massiot, M., 1 Dec 2012, ASME 2012 11th Biennial Conference on Engineering Systems Design and Analysis, ESDA 2012. p. 357-365 9 p. (ASME 2012 11th Biennial Conference on Engineering Systems Design and Analysis, ESDA 2012; vol. 4).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Power electronics
Tungsten
Alumina
Networks (circuits)
Substrates
6 Citations (Scopus)

New investigation possibilities on forward biased power devices using cross sections

Kociniewski, T., Moussodji, J., Khatir, Z., Berkani, M., Lefebvre, S. & Azzopardi, S., 1 Apr 2012, In : IEEE Electron Device Letters. 33, 4, p. 576-578 3 p., 6151010.

Research output: Contribution to journalArticle

Insulated gate bipolar transistors (IGBT)
Silicon
Macros
Lenses
Diodes
2011
276 Citations (Scopus)

Ageing and failure modes of IGBT modules in high-temperature power cycling

Smet, V., Forest, F., Huselstein, J. J., Richardeau, F., Khatir, Z., Lefebvre, S. & Berkani, M., 1 Jan 2011, In : IEEE Transactions on Industrial Electronics. 58, 10, p. 4931-4941 11 p., 5711661.

Research output: Contribution to journalArticle

Insulated gate bipolar transistors (IGBT)
Failure modes
Aging of materials
Metallizing
Thermal stress
28 Citations (Scopus)

Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition

Oukaour, A., Tala-Ighil, B., Pouderoux, B., Tounsi, M., Bouarroudj-Berkani, M., Lefebvre, S. & Boudart, B., 1 Feb 2011, In : Microelectronics Reliability. 51, 2, p. 386-391 6 p.

Research output: Contribution to journalArticle

Insulated gate bipolar transistors (IGBT)
bipolar transistors
pattern recognition
Pattern recognition
education