• 1215 Citations
  • 18 h-Index
1993 …2019

Research output per year

If you made any changes in Pure these will be visible here soon.

Research Output

2019

Gate leakage-current, damaged gate and open-circuit failure-mode of recent SiC Power Mosfet: Overview and analysis of unique properties for converter protection and possible future safety management

Richardeau, F., Boige, F. & Lefebvre, S., 9 Jan 2019, 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018. Institute of Electrical and Electronics Engineers Inc., 8607551. (2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
5 Citations (Scopus)
2018

Aluminum metallization and wire bonding aging in power MOSFET modules

Ruffilli, R., Berkani, M., Dupuy, P., Lefebvre, S., Weber, Y., Warot-Fonrose, B., Marcelot, C. & Legros, M., 1 Jan 2018, In : Materials Today: Proceedings. 5, 6, p. 14641-14651 11 p.

Research output: Contribution to journalConference article

Effect of short circuit aging on safe operating area of SiC MOSFET

Nguyen, T. A., Lefebvre, S. & Azzopardi, S., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 645-651 7 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation

Boige, F., Richardeau, F., Lefebvre, S., Blaquière, J. M., Guibaud, G. & Bourennane, A., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 598-603 6 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Experimental investigation of the reliability of Printed Circuit Board (PCB)-embedded power dies with pressed contact made of metal foam

Pascal, Y., Labrousse, D., Petit, M., Lefebvre, S. & Costa, F., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 707-714 8 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Inverse thermal model of temperature-to-power mapping for GaN systems

Zhang, S., Laboure, E., Labrousse, D. & Lefebvre, S., 1 Jan 2018, PCIM Europe Conference Proceedings. Scharf, A. (ed.). 225809 ed. Mesago PCIM GmbH, p. 939-943 5 p. (PCIM Europe Conference Proceedings; no. 225809).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Pcb-embedding of power dies using pressed metal foam

Pascal, Y., Labrousse, D., Petit, M., Lefebvre, S. & Costa, F., 1 Jan 2018, PCIM Europe Conference Proceedings. Scharf, A. (ed.). 225809 ed. Mesago PCIM GmbH, p. 1451-1438 14 p. (PCIM Europe Conference Proceedings; no. 225809).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

SiC MOSFETs robustness for diode-less applications

Avino-Salvado, O., Cheng, C., Buttay, C., Morel, H., Labrousse, D., Lefebvre, S. & Ali, M., 3 Jul 2018, In : EPE Journal (European Power Electronics and Drives Journal). 28, 3, p. 128-135 8 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Thermoelectric cooling for bare dies power devices embedded in pcb substrates

Zhang, S., Laboure, E., Labrousselabrousse, D. & Lefebvre, S., 1 Jan 2018, PCIM Europe Conference Proceedings. Scharf, A. (ed.). 225809 ed. Mesago PCIM GmbH, p. 1408-1415 8 p. (PCIM Europe Conference Proceedings; no. 225809).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode

Aviñó Salvadó, O., Morel, H., Buttay, C., Labrousse, D. & Lefebvre, S., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 636-640 5 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)
2017

Development of testing methods for winding turn-to-turn insulation of low voltage motors fed by PWM converters

Bolgova, V., Lefebvre, S., Hlioui, S., Boucenna, N., Costa, F. & Leonov, A., 6 Nov 2017, 2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe. Institute of Electrical and Electronics Engineers Inc., 8099363. (2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe; vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Dispersion of electrical characteristics and short-circuit robustness of 600V E-mode GaN transistors

Landel, M., Lefebvre, S., Labrousse, D., Gautier, C., Zaki, F. & Khatir, Z., 1 Jan 2017, PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., 7990737. (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Estimation of the losses in Si and SiC power modules for automotive applications

Oustad, D., Lefebvre, S., Petit, M., Ameziani, M. & Lhotellier, D., 1 Jan 2017, PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., 7990929. (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

Boige, F., Richardeau, F., Trémouilles, D., Lefebvre, S. & Guibaud, G., 1 Sep 2017, In : Microelectronics Reliability. 76-77, p. 500-506 7 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

Mechanisms of power module source metal degradation during electro-thermal aging

Ruffilli, R., Berkani, M., Dupuy, P., Lefebvre, S., Weber, Y. & Legros, M., 1 Sep 2017, In : Microelectronics Reliability. 76-77, p. 507-511 5 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Thermal management for GaN power devices mounted on PCB substrates

Zhang, S., Laboure, E., Labrousse, D. & Lefebvre, S., 31 May 2017, 2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017. Institute of Electrical and Electronics Engineers Inc., 7936752. (2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Using Laminated Metal Foam as the Top-Side Contact of a PCB-Embedded Power Die

Pascal, Y., Abdedaim, A., Labrousse, D., Petit, M., Lefebvre, S. & Costa, F., 1 Oct 2017, In : IEEE Electron Device Letters. 38, 10, p. 1453-1456 4 p., 8023968.

Research output: Contribution to journalArticle

7 Citations (Scopus)
2016

[131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors

Landel, M., Gautier, C., Labrousse, D. & Lefebvre, S., 1 Sep 2016, In : Microelectronics Reliability. 64, p. 560-565 6 p.

Research output: Contribution to journalArticle

14 Citations (Scopus)

Comparison of modeling switching losses of an IGBT based on the datasheet and an experimentation

Oustad, D., Lefebvre, S., Petit, M., Lhotellier, D. & Ameziani, M., 25 Oct 2016, 2016 18th European Conference on Power Electronics and Applications, EPE 2016 ECCE Europe. Institute of Electrical and Electronics Engineers Inc., 7695494. (2016 18th European Conference on Power Electronics and Applications, EPE 2016 ECCE Europe).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

PCB integration of a magnetic component dedicated to a power factor corrector converter

Hérault, G., Labrousse, D., Mercier, A. & Lefebvre, S., 1 Jan 2016, PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., p. 1647-1654 8 p. 7499550. (PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Surface analysis of smart power top metal: IR thermal measurement and source potential mapping

Berkani, M., Lefebvre, S., Rostaing, G., Riccio, M., Irace, A., Ruffilli, R. & Dupuy, P., 25 Jul 2016, Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., p. 395-398 4 p. 7520861. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2016-July).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2015

Estimating current distributions in power semiconductor dies under aging conditions: Bond wire liftoff and aluminum reconstruction

Nguyen, T. A., Lefebvre, S., Joubert, P. Y., Labrousse, D. & Bontemps, S., 1 Apr 2015, In : IEEE Transactions on Components, Packaging and Manufacturing Technology. 5, 4, p. 483-495 13 p., 7057669.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET

Tala-Ighil, B., Trolet, J. L., Gualous, H., Mary, P. & Lefebvre, S., 1 Aug 2015, In : Microelectronics Reliability. 55, 9-10, p. 1512-1516 5 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

In-depth investigation of metallization aging in power MOSFETs

Ruffilli, R., Berkani, M., Dupuy, P., Lefebvre, S., Weber, Y. & Legros, M., 1 Aug 2015, In : Microelectronics Reliability. 55, 9-10, p. 1966-1970 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Robustness in short-circuit Mode of SiC MOSFETs

Chen, C., Labrousse, D., Lefebvre, S., Petit, M., Buttay, C. & Morel, H., 1 Jan 2015, PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. Institute of Electrical and Electronics Engineers Inc., 7149084. (PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Citations (Scopus)

Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs

Chen, C., Labrousse, D., Lefebvre, S., Petit, M., Buttay, C. & Morel, H., 1 Aug 2015, In : Microelectronics Reliability. 55, 9-10, p. 1708-1713 6 p.

Research output: Contribution to journalArticle

41 Citations (Scopus)
2014

3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions

Riccio, M., D'Alessandro, V., Irace, A., Rostaing, G., Berkani, M., Lefebvre, S. & Dupuy, P., 1 Sep 2014, In : Microelectronics Reliability. 54, 9-10, p. 1845-1850 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Distributed and coupled 2D electro-thermal model of power semiconductor devices

Belkacem, G., Lefebvre, S., Joubert, P. Y., Bouarroudj-Berkani, M., Labrousse, D. & Rostaing, G., 1 Jan 2014, In : EPJ Applied Physics. 66, 2, ap130486.

Research output: Contribution to journalArticle

2 Citations (Scopus)
Open Access

Optimization of the driver of gan power transistors through measurement of their thermal behavior

Hoffmann, L., Gautier, C., Lefebvre, S. & Costa, F., 1 May 2014, In : IEEE Transactions on Power Electronics. 29, 5, p. 2359-2366 8 p., 6576880.

Research output: Contribution to journalArticle

22 Citations (Scopus)
2013

Faults Detection and Diagnosis in a Static Converter

Benbouzid, M., Delpha, C., Khatir, Z., Lefebvre, S. & Diallo, D., 14 Feb 2013, Electrical Machines Diagnosis. John Wiley and Sons, p. 271-319 49 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

4 Citations (Scopus)

Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications

Othman, Lefebvre, S., Berkani, M., Khatir, Z., Ibrahim, A. & Bouzourene, A., 17 Dec 2013, 2013 15th European Conference on Power Electronics and Applications, EPE 2013. 6634665. (2013 15th European Conference on Power Electronics and Applications, EPE 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)

Monitoring of ageing chips of semiconductor power modules using eddy current sensor

Nguyen, T. A., Joubert, P. Y., Lefebvre, S. & Bontemps, S., 14 Mar 2013, In : Electronics Letters. 49, 6, p. 402-404 3 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 v battery system applications

Rostaing, G., Berkani, M., Mechouche, D., Labrousse, D., Lefebvre, S., Khatir, Z. & Dupuy, P., 1 Sep 2013, In : Microelectronics Reliability. 53, 9-11, p. 1703-1706 4 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Robustness of 1.2 kV SiC MOSFET devices

Othman, D., Lefebvre, S., Berkani, M., Khatir, Z., Ibrahim, A. & Bouzourene, A., 1 Sep 2013, In : Microelectronics Reliability. 53, 9-11, p. 1735-1738 4 p.

Research output: Contribution to journalArticle

42 Citations (Scopus)

Saturation current and on-resistance correlation during during repetitive short-circuit conditions on SiC JFET transistors

Berkani, M., Lefebvre, S. & Khatir, Z., 1 Jan 2013, In : IEEE Transactions on Power Electronics. 28, 2, p. 621-624 4 p., 6314491.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Study on aluminum reconstruction and bond wire lift-off effects on current distribution in power semiconductor dies

Nguyen, T. A., Lefebvre, S., Joubert, P. Y., Labrousse, D. & Bontemps, S., 1 Jan 2013, Proceedings - PCIM Europe 2013: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Mesago PCIM GmbH, p. 583-590 8 p. (PCIM Europe Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thermal measurement of losses of GaN power transistors for optimization of their drive

Hoffmann, L., Gautier, C., Lefebvre, S. & Costa, F., 17 Dec 2013, 2013 15th European Conference on Power Electronics and Applications, EPE 2013. 6634623. (2013 15th European Conference on Power Electronics and Applications, EPE 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Use of a full wave correct-by-design command to control a multilevel modular converter

Soulat, R., Herault, G., Labrousse, D., Revol, B., Feld, G., Lefebvre, S. & Fribourg, L., 17 Dec 2013, 2013 15th European Conference on Power Electronics and Applications, EPE 2013. 6634448. (2013 15th European Conference on Power Electronics and Applications, EPE 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2012

A measure using the eddy current technique on the effect of aluminum reconstruction in power semiconductor modules

Nguyen, T. A., Labrousse, D., Joubert, P. Y., Lefebvre, S. & Bontemps, S., 1 Dec 2012, Proceedings - PCIM Europe 2012: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. p. 757-766 10 p. (PCIM Europe Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Application of thermoelectricity to IGBT for temperature regulation and energy harvesting

Tian, Y., Vasic, D. & Lefebvre, S., 15 Aug 2012, Proceedings - 2012 IEEE International Symposium on Industrial Electronics, ISIE 2012. p. 211-216 6 p. 6237086. (IEEE International Symposium on Industrial Electronics).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application

Othman, D., Berkani, M., Lefebvre, S., Ibrahim, A., Khatir, Z. & Bouzourene, A., 1 Sep 2012, In : Microelectronics Reliability. 52, 9-10, p. 1859-1864 6 p.

Research output: Contribution to journalArticle

35 Citations (Scopus)

Distributed and coupled electrothermal model of power semiconductor devices

Belkacem, G., Labrousse, D., Lefebvre, S., Joubert, P. Y., Kuhne, U., Fribourg, L., Soulat, R., Florentin, E. & Rey, C., 24 May 2012, 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012. p. 84-89 6 p. 6195253. (2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Estimation of a surface current distribution from 2D magnetic field measurements

Nguyen, T. A., Joubert, P. Y., Lefebvre, S. & Chaplier, G., 9 Oct 2012, In : International Journal of Applied Electromagnetics and Mechanics. 39, 1-4, p. 151-156 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Imagerie électromagnétique sans contact de composants électroniques de puissance à semi-conducteurs: Application à la caractérisation du vieillissement des métallisations de surface

Translated title of the contribution: Contactless electromagnetic imaging of power electronic semiconductor devices. Application to the characterization of surface metalizations ageingNguyen, T. A., Lefebvre, S. & Joubert, P. Y., 1 Dec 2012, In : Instrumentation Mesure Metrologie. 12, 1-2, p. 65-89 25 p.

Research output: Contribution to journalArticle

Mechanical behavior and damage of tridimensional multilayered ceramics-tungsten power electronic substrates

Robert, C., Pommier, S., Lefebvre, S., Ortali, M. & Massiot, M., 1 Dec 2012, ASME 2012 11th Biennial Conference on Engineering Systems Design and Analysis, ESDA 2012. p. 357-365 9 p. (ASME 2012 11th Biennial Conference on Engineering Systems Design and Analysis, ESDA 2012; vol. 4).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

New investigation possibilities on forward biased power devices using cross sections

Kociniewski, T., Moussodji, J., Khatir, Z., Berkani, M., Lefebvre, S. & Azzopardi, S., 1 Apr 2012, In : IEEE Electron Device Letters. 33, 4, p. 576-578 3 p., 6151010.

Research output: Contribution to journalArticle

6 Citations (Scopus)
2011

Ageing and failure modes of IGBT modules in high-temperature power cycling

Smet, V., Forest, F., Huselstein, J. J., Richardeau, F., Khatir, Z., Lefebvre, S. & Berkani, M., 1 Jan 2011, In : IEEE Transactions on Industrial Electronics. 58, 10, p. 4931-4941 11 p., 5711661.

Research output: Contribution to journalArticle

276 Citations (Scopus)

Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition

Oukaour, A., Tala-Ighil, B., Pouderoux, B., Tounsi, M., Bouarroudj-Berkani, M., Lefebvre, S. & Boudart, B., 1 Feb 2011, In : Microelectronics Reliability. 51, 2, p. 386-391 6 p.

Research output: Contribution to journalArticle

28 Citations (Scopus)