• 1215 Citations
  • 18 h-Index
1993 …2019

Research output per year

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Research Output

Gate leakage-current, damaged gate and open-circuit failure-mode of recent SiC Power Mosfet: Overview and analysis of unique properties for converter protection and possible future safety management

Richardeau, F., Boige, F. & Lefebvre, S., 9 Jan 2019, 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018. Institute of Electrical and Electronics Engineers Inc., 8607551. (2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 1 Citation (Scopus)
  • 5 Citations (Scopus)

    Aluminum metallization and wire bonding aging in power MOSFET modules

    Ruffilli, R., Berkani, M., Dupuy, P., Lefebvre, S., Weber, Y., Warot-Fonrose, B., Marcelot, C. & Legros, M., 1 Jan 2018, In : Materials Today: Proceedings. 5, 6, p. 14641-14651 11 p.

    Research output: Contribution to journalConference article

  • Effect of short circuit aging on safe operating area of SiC MOSFET

    Nguyen, T. A., Lefebvre, S. & Azzopardi, S., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 645-651 7 p.

    Research output: Contribution to journalArticle

  • 2 Citations (Scopus)

    Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation

    Boige, F., Richardeau, F., Lefebvre, S., Blaquière, J. M., Guibaud, G. & Bourennane, A., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 598-603 6 p.

    Research output: Contribution to journalArticle

  • 5 Citations (Scopus)