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Fingerprint Dive into the research topics where Stephane Lefebvre is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

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Insulated gate bipolar transistors (IGBT) Engineering & Materials Science
Short circuit currents Engineering & Materials Science
Aging of materials Engineering & Materials Science
short circuits Physics & Astronomy
Metallizing Engineering & Materials Science
Transistors Engineering & Materials Science
Failure modes Engineering & Materials Science
Junction gate field effect transistors Engineering & Materials Science

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Research Output 1993 2019

Gate leakage-current, damaged gate and open-circuit failure-mode of recent SiC Power Mosfet: Overview and analysis of unique properties for converter protection and possible future safety management

Richardeau, F., Boige, F. & Lefebvre, S., 9 Jan 2019, 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018. Institute of Electrical and Electronics Engineers Inc., 8607551. (2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Leakage Current
MOSFET
Failure Mode
Power electronics
Silicon carbide
3 Citations (Scopus)
MOSFET
Short circuit currents
Macros
Networks (circuits)
Modeling

Aluminum metallization and wire bonding aging in power MOSFET modules

Ruffilli, R., Berkani, M., Dupuy, P., Lefebvre, S., Weber, Y., Warot-Fonrose, B., Marcelot, C. & Legros, M., 1 Jan 2018, In : Materials Today: Proceedings. 5, 6, p. 14641-14651 11 p.

Research output: Contribution to journalConference article

Metallizing
Aluminum
Aging of materials
Wire
Aluminum Oxide
1 Citation (Scopus)

Effect of short circuit aging on safe operating area of SiC MOSFET

Nguyen, T. A., Lefebvre, S. & Azzopardi, S., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 645-651 7 p.

Research output: Contribution to journalArticle

short circuits
Short circuit currents
field effect transistors
Aging of materials
Leakage currents
2 Citations (Scopus)

Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation

Boige, F., Richardeau, F., Lefebvre, S., Blaquière, J. M., Guibaud, G. & Bourennane, A., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 598-603 6 p.

Research output: Contribution to journalArticle

short circuits
MOSFET devices
Short circuit currents
Failure modes
field effect transistors