• 45 Citations
  • 4 h-Index
20012018

Research output per year

If you made any changes in Pure these will be visible here soon.

Fingerprint Dive into the research topics where Alexander Nikolaevich Razzhuvalov is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 3 Similar Profiles

Research Output

  • 45 Citations
  • 4 h-Index
  • 8 Article

Tunneling current in w-GaN/AlN(0001) structures with deep-level defects

Razzhuvalov, A. N. & Grinyaev, S. N., 1 Oct 2018, In : Superlattices and Microstructures. 122, p. 624-630 7 p.

Research output: Contribution to journalArticle

  • Peculiarities of tunneling current in w-AlN/GaN(0001) two-barrier structures induced by deep-level defects

    Grinyaev, S. N. & Razzhuvalov, A. N., 21 Oct 2016, In : Journal of Applied Physics. 120, 15, 154302.

    Research output: Contribution to journalArticle

  • 1 Citation (Scopus)

    Analysis of boundary conditions for the envelope functions of GaN/InGaN(0001) heterostructures

    Karavaev, G. F., Chernyshov, VN. & Razzhuvalov, A. N., Dec 2012, In : Russian Physics Journal. 55, 7, p. 764-771 8 p.

    Research output: Contribution to journalArticle

  • A "capacitor" model of the hysteresis of tunneling current in w-GaN/AlGaN(0001) structures

    Razzhuvalov, A. N. & Grinyaev, S. N., Jan 2009, In : Physics of the Solid State. 51, 1, p. 189-201 13 p.

    Research output: Contribution to journalArticle

  • 1 Citation (Scopus)

    Hysteresis of tunnel current in w-GaN/AlGaN(0001) double-barrier structures

    Razzhuvalov, A. N. & Grinyaev, S. N., May 2008, In : Semiconductors. 42, 5, p. 580-588 9 p.

    Research output: Contribution to journalArticle

  • 9 Citations (Scopus)